A TPR-family membrane protein gene is required for light-activated heterotrophic growth of the cyanobacterium Synechocystis sp PCC 6803

The unicellular cyanobacterium Synechocystis sp. PCC6803 can grow heterotrophically in complete darkness, given that a brief period of illumination is supplemented every day (light-activated heterotrophic growth, LAHG), or under very weak ( < 0.5 mumol m(-2) s(-1)) but continuous light. By random insertion of the genome with an antibiotic resistance cassette, mutants defective in LAHG were generated. In two identical mutants, sll0886, a tetratricopeptide repeat (TPR)-family membrane protein gene, was disrupted. Targeted insertion of sll0886 and three downstream genes showed that the phenotype was not due to a polar effect. The sll0886 mutant shows normal photoheterotrophic growth when the light intensity is at 2.5 mumol m(-2) s(-1) or above, but no growth at 0.5 mumol m(-2) s(-1). Homologs to sll0886 are also present in cyanobacteria that are not known of LAHG. sll0886 and homologs may be involved in controlling different physiological processes that respond to light of low fluence. (C) 2003 Federation of European Microbiological Societies. Published by Elsevier Science B.V. All rights reserved.

STUDIES ON MIXED MASS CULTIVATION OF ANABAENA SPP (NITROGEN-FIXING BLUE-GREEN-ALGAE, CYANOBACTERIA) ON A LARGE-SCALE

Studies on mixed mass cultivation of Anabaena spp. on a large scale (5170 m2) were conducted continuously for 3 years. Under the continental monsoon climate in northern subtropics (30-degrees-N, 115-degrees-E), 7-11 g dry weight m-2 day-1 of microalgal biomass on average was harvested in simple plastic greenhouses in the effective growth days during the warmer seasons. The maximum productivity was 22 g m-2 day-1 in the middle of summer. Observations on the productive properties of strains of Anabaena spp. indicated that they were different from and could compensate for each other in their productivities and adaptations to the seasonal changes. With different lining materials (PVC sheets, concrete, sand and soil) in the culture ponds, no significant variation of productivity was found, but bubbling with biogas in the middle of the day and the application of some growth regulating substances (2,4-D, NaHSO3 and extracts of oyster mushroom spawn) was able to improve the production. The cost of microalgal biomass in this way was around 0.75-1.0 US dollar(s) per kilogram.

Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane

This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates. Using bulge testing combined with a refined load-deflection model of long rectangular membranes, which takes into account the bending stiffness and prestress of the membrane material, the Young's modulus, prestress, and fracture strength for the 3C-SiC thin films with thicknesses of 0.40 and 1.42 mu m were extracted. The stress distribution in the membranes under a load was calculated analytically. The prestresses for the two films were 322 +/- 47 and 201 +/- 34 MPa, respectively. The thinner 3C-SiC film with a strong (111) orientation has a plane-gstrain moduli of 415 +/- 61 GPa, whereas the thicker film with a mixture of both (111) and (110) orientations exhibited a plane-strain moduli of 329 +/- 49 GPa. The corresponding fracture strengths for the two kinds of SiC films were 6.49 +/- 0.88 and 3.16 +/- 0.38 GPa, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over edge, surface, and volume of the specimens and were fitted with Weibull distribution function. For the 0.40-mu m-thick membranes, the surface integration has a better agreement between the data and the model, implying that the surface flaws are the dominant fracture origin. For the 1.42-mu m-thick membranes, the surface integration presented only a slightly better fitting quality than the other two, and therefore, it is difficult to rule out unambiguously the effects of the volume and edge flaws.

Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure

The results of conductivity, photoconductivity and constant photocurrent method absorption measurements by DC and AC methods in hydrogenated silicon films with mixed amorphous-nanocrystalline structure are presented. A series of diphasic silicon films was deposited by very high frequency plasma enhanced chemical vapor deposition technique, using different hydrogen dilution ratios of silane. The increase of hydrogen dilution ratio results in five orders of magnitude increase of conductivity and a sharp increase of grain volume fraction. The comparison of the absorption spectra obtained by DC and AC methods showed that they are similar for silicon films with the predominantly amorphous structure and films with high grain volume fraction. However we found a dramatic discrepancy between the absorption spectra obtained by DC and AC constant photocurrent methods in silicon films deposited in the regime of the structure transition from amorphous to nanocrystalline state. AC constant photocurrent method gives higher absorption coefficient than DC constant photocurrent method in the photon energy range of 1.2-1.7 eV. This result indicates the possibility of crystalline grains contribution to absorption spectra measured by AC constant photocurrent method in silicon films with intermediate crystalline grain volume fraction. (c) 2008 Published by Elsevier B.V.

Enhanced Proton Conduction in Polymer Electrolyte Membranes as Synthesized by Polymerization of Protic Ionic Liquid-Based Microemulsions

Proton-conducting membranes were prepared by polymerization of microemulsions consisting of surfactant-stabilized protic ionic liquid (PIL) nanodomains dispersed in a polymerizable oil, a mixture of styrene and acrylonitrile. The obtained PIL-based polymer composite membranes are transparent and flexible even though the resulting vinyl polymers are immiscible with PIL cores. This type of composite membranes have quite a good thermal stability, chemical stability, tunability, and good mechanical properties. Under nonhumidifying conditions, PIL-based membranes show a conductivity up to the order of 1 x 10(-1) S/cm at 160 degrees C, due to the well-connected PIL nanochannels preserved in the membrane. This type of polymer conducting membranes have potential application in high-temperature polymer electrolyte membrane fuel cells.

MEMBRANE-BASED FIBER BRAGG GRATING PRESSURE SENSOR WITH HIGH SENSITIVITY

A fiber Bragg grating (FBG) pressure sensor packaged by using a hard core in the membrane is presented. By utilizing the unique membrane-based FBG packagine method, its pressure sensitivity has been effectively enhanced. The pressure sensitivity of the FBG reaches 5.75 X 10(-3)/MPa within the pressure range of 0.0.16 Mpa. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51 1279-1281, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24335

A 1,000 Frames/s Programmable Vision Chip with Variable Resolution and Row-Pixel-Mixed Parallel Image Processors

A programmable vision chip with variable resolution and row-pixel-mixed parallel image processors is presented. The chip consists of a CMOS sensor array, with row-parallel 6-bit Algorithmic ADCs, row-parallel gray-scale image processors, pixel-parallel SIMD Processing Element (PE) array, and instruction controller. The resolution of the image in the chip is variable: high resolution for a focused area and low resolution for general view. It implements gray-scale and binary mathematical morphology algorithms in series to carry out low-level and mid-level image processing and sends out features of the image for various applications. It can perform image processing at over 1,000 frames/s (fps). A prototype chip with 64 x 64 pixels resolution and 6-bit gray-scale image is fabricated in 0.18 mu m Standard CMOS process. The area size of chip is 1.5 mm x 3.5 mm. Each pixel size is 9.5 mu m x 9.5 mu m and each processing element size is 23 mu m x 29 mu m. The experiment results demonstrate that the chip can perform low-level and mid-level image processing and it can be applied in the real-time vision applications, such as high speed target tracking.

Synthesis of composite AIN powder mixed with sintering additives by the Lanxide method

Composite AlN powder, mixed with the sintering additive Y2O3, was synthesized by the direct nitridation of molten Al-Mg-Y alloys. The character of products was determined by means of electron microscopy, X-ray diffraction, granularmetric analysis and chemical composition analysis etc. The results show that the nitridation rate of the raw alloys is higher, and the nitridation products axe porous enough to be easily crushed. Composite AlN powder, obtained by the Lanxide method, has excellent characters such as high purity, especially low oxygen content, and narrow well-distributed grain size and so on.

Silicon membrane resonant-cavity-enhanced photodetector

A Si resonant-cavity-enhanced (RCE) photodiode was fabricated on a silicon membrane. The Si membrane was formed by etching from the back side of the silicon-on-insulator substrate with the buried SiO2 layer as etch-stop layer. A gold layer was deposited serving as an electrode layer and bottom mirror of the RCE photodiode. The photodiode had an external quantum efficiency of 33.8% at the resonant wavelength of 848 nm and a full width at half maximum (FWHM) of 17 nm. The responsivity was 4.6 times that of a conventional Si p-i-n photodiode with the same absorption layer thickness. (c) 2005 American Institute of Physics.

Improved performance in organic light emitting diodes with a mixed electron donor-acceptor film involved in hole injection

Organic light emitting diodes using a mixed layer of electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride and electron donor copper phthalocyanine (PTCDA:CuPc) on indium tin oxide (ITO) anodes were fabricated. The device properties were found to be strongly dependent on the thickness of the PTCDA:CuPc film: both the power efficiency and the driving voltage of the device were optimized with a thickness of PTCDA:CuPc ranging from 10 to 20 nm. As compared to the conventional ITO/CuPc hole injection structure, the ITO/PTCDA:CuPc hole injection structure could remarkably enhance both the luminance and the power efficiencies of devices. A mechanism of static-induced, very efficient hole-electron pairs generation in mixed PTCDA:CuPc films was proposed to explain the experimental phenomena. The structural and optical properties of PTCDA:CuPc film were examined as well. (c) 2007 American Institute of Physics.

Local transformation of mixed states of two qubits to Bell diagonal states

The optimal entanglement manipulation for a single copy of mixed states of two qubits is to transform it to a Bell diagonal state. In this paper we derive an explicit form of the local operation that can realize such a transformation. The result obtained is universal for arbitrary entangled two-qubit states and it discloses that the corresponding local filter is not unique for density matrices with rank n = 2 and can be exclusively determined for that with n = 3 and 4. As illustrations, a four-parameter family of mixed states are explored, the local filter as well as the transformation probability are given explicitly, which verify the validity of the general result.

Optical properties of ZnSxTe1-x mixed crystals

The Raman scattering and the photoluminescence (PL) of ZnSxTe1-x mixed crystals grown by MBE, covering the entire composition range (0 less than or equal to x<1), were investigated. The results of Raman studies show that the phonons in ZnSxTe1-x mixed crystals display two-mode behavior. In addition, photoluminescence spectra obtained in backscattering and edge-emission geometries, reflection spectra and the temperature dependence of the photoluminescence of ZnSxTe1-x from 10 to 300K were employed to find out the origins of PL emissions in ZnSxTe1-x with different x values, The results indicate that the emission bands, for the samples with small x values, can be related to the band gap transitions or a shallow level emission center, while for the samples with large x values, they are designated to strong radiative recombinations of Te isoelectronic centers.

Raman scattering and photoluminescence of ZnSxTe1-x mixed crystals

We have investigated the Raman scattering and the photoluminescence (PL) of ZnSxTe1-x mixed crystals grown by MBE, covering the entire composition range (0 less than or equal to x < 1). The results of Raman studies show that the ZnSxTe1-x mixed crystals display two-mode behaviour. In addition, photoluminescence spectra obtained in backscattering and edge-emission geometries, reflectivity spectra and the: temperature dependence of the photoluminescence of ZnSxTe1-x have been employed to find out the origin of PL emissions in ZnSxTe1-x with different x values. The results indicate that emission bands, for the samples with small x values, can be related to the band gap transitions or a shallow-level emission centre, while as x approaches 1, they are designated to strong radiative recombination of Te isoelectronic centres (IECs).

Si-based membrane resonant cavity enhanced photodetectors

Si-based membrane RCE photodetectors were introduced. The RCE photodiodes were fabricated on silicon membranes formed from SOI substrate. Compared with the conventional p-i-n photodiode, the responsivity has a threefold enhancement.