Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy

InAs self-organized quantum dots in InAlAs matrix lattice-matched to exactly oriented (001) InP substrates were grown by solid source molecular beam epitaxy (MBE) using the Stranski-Krastanow mode. Preliminary characterizations have been performed using photoluminescence and transmission electron microscopy. The geometrical arrangement of the quantum dots is found to be strongly dependent on the amount of coverage. At low deposition thickness. InAs QDs are arranged in chains along [1(1) over bar0$] directions. Luminescence from the quantum dots and the wetting layer consisting of quantum wells with well widths of 1, 2, and 3 monolayers is observed. (C) 1998 American Institute of Physics.

The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.

Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. (C) 1998 Elsevier Science B.V.

Optical anisotropy of InAs monolayer in (311)-oriented GaAs matrix

In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in (311)-oriented GaAs matrix is observed by reflectance difference spectroscopy. The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots. The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of (311) orientation quantum wells, indicating that there is little structural or strain anisotropy of the InAs layer grown on (311)-oriented GaAs surface.

Performing Fast Addition and Multiplication by Transferring Single Electrons

This paper proposes novel fast addition and multiplication circuits that are based on non-binary redundant number systems and single electron (SE) devices. The circuits consist of MOSFET-based single-electron (SE) turnstiles. We use the number of electrons to represent discrete multiple-valued logic states and we finish arithmetic operations by controlling the number of electrons transferred. We construct a compact PD2,3 adder and a 12x12bit multiplier using the PD2,3 adder. The speed of the adder can be as high as 600MHz with 400nW power dissipation. The speed of the adder is regardless of its operand length. The proposed circuits have much smaller transistors than conventional circuits.

Zinc phthalocyanine (ZnPc) incorporated into silicon matrix grown by plasma enhanced chemical vapor deposition (PECVD)

Hybrid composites composed of zinc phthalocyanine embedded in silicon matrixes have attracted attention because of the potential for solar energy conversion. We produce hybrid composites by thermal evaporation for the plithalocyanine and PECVD (Plasma Enhanced Chemical Vapor Deposition) for the silicon matrix. Deposition of ZnPc/a-Si(amorphous silicon) composites was achieved in a sequential manner. The compound films were characterized by optical transmittance spectra and photoconductivity measurement. The optical transmittance measurements were carried out in the visible region (500 - 800 nm). Compared to pure silicon film, the photosensitivity of compound functional films was enhanced by one order of magnitude. This demonstrates the Si sensitized by adding ZnPc.

SOI optical switch matrix integrated with spot size converter (SSC) and total internal reflection (TIR) mirrors

SOI (Silicon on Insulator) based photonic devices has attracted more and more attention in the recent years. Integration of SOI optical switch matrix with isolating grooves, total internal reflection (TIR) mirrors and spot size converter (SSC) was studied. A folding re-arrangeable non-blocking 4x4 optical switch matrix and a blocking 16x16 matrix with TIR mirrors and SSC were fabricated on SOI wafer. The performaces, including extinction ratio and the crosstalk, are better than before. The insertion loss and the polarization dependent loss (PDL) at 1.55 mu m increase slightly with longer device length, more bend and intersecting waveguides. The insertion losses decrease 2 similar to 3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.

Photoluminescence mechanism of Si nanocrystals embedded in SiO2 matrix

The interface state recombination effect from the quantum confinement effect in PL signals from the SRO material system was studied. The results show that the larger the size of Si NCs, the more beneficial for the interface state recombination process to surpass the quantum confinement process, in support of Qin's model.

SOI-based thermo-optic waveguide switch matrix with spot size converters

A SOI-based thermo-optic waveguide switch matrix worked at 1.55 mu m, integrated with spot size converters is designed and fabricated for the first time. The insertion loss and polarization dependent loss are less than 13dB and 2dB, respectively. The extinction ratio is larger than 19dB. The response time is less than 5 mu s and the power consumption of the switch cell is about 200mW.

Silicon-on-insulator based optical waveguide and integrated switch matrix

zhangdi于2010-03-29批量导入

SpMV的自动性能优化实现技术及其应用研究

在科学计算中,稀疏矩阵向量乘(SpMV)是一个十分重要且经常被大量调用的计算内核.由于SpMV一般实现算法的浮点计算和存储访问次数比率非常低,且其存储访问模式极为不规则,其实际运行性能往往很低.通过采用寄存器分块算法和启发式分块大小选择算法,将稀疏矩阵分成小的稠密分块,重用保存在寄存器中向量x元素,可以提高该计算内核的性能.剖析和总结了OSKI软件包所采用的若干关键优化技术,并进行了实际应用性能测试.测试表明,在实际应用这些优化技术的过程中,应用程序对SpMV的调用次数要达到上百次的量级,才能抵消由于应用这些性能优化技术所带来的额外时间开销,取得性能加速效果.在Pentium4和AMD Athlon平台上,测试了10个矩阵,其平均加速比分别达到了1.69和1.48.

RAM(h)模型下SpMV存储访问复杂度的分析

稀疏矩阵向量乘(SpMV)采取压缩行存储格式的算法性能非常差,而寄存器分块算法可以使得数据尽量在靠近处理器的存储层次中访问而提高性能.利用RAM(h)模型进行分析和比较不同算法形式的存储访问复杂度,可以比较两种算法的优劣.通过RAM(h)分析SpMV两种实现形式的存储访问复杂度,同时在奔腾四平台上,测试了7个稀疏矩阵的SpMV性能,并统计了这两种算法中L1,L2,和TLB的缺失率,实验结果与模型分析的数据一致.

OpenMP循环调度算法及SpMV多核并行化研究

OpenMP是一种支持Fortran，C/C++的共享存储并行编程标准。它基于fork-join的并行执行模型，将程序划分为并行区和串行区。近几年来，OpenMP在SMP(Symmetric Multi-Processing)和多核体系结构的并行编程中得到了广泛的应用。随着多核处理器的发展，实际的应用程序如何充分利用多个处理器核来提高运算效率也成为研究的热点。 在科学计算中，循环结构是最核心的并行对象之一。考虑到负载平衡、调度开销、同步开销等多方面因素，OpenMP标准制定了Static调度、Dynamic调度、Guided调度和Runtime调度等不同策略。针对Guided调度策略不适合递减型循环结构的缺点，本文提出了一种改进的new_guided调度策略，并在OMPi编译器上加以实现。New_guided调度策略的主要思想是对前半部分的循环采用Static调度，后半部分的循环采用Guided调度。此外，本文针对不同的循环结构，在多核处理器上对不同的调度策略进行了评测。测试结果表明，在一般情况下，OpenMP默认的Static策略的调度性能最差；对于规则的循环结构和递增的循环结构，Dynamic调度策略、Guided调度策略和new_guided策略的性能差别不大；对于递减型的循环结构，Dynamic调度策略和new_guided策略的性能相当，要优于Guided调度策略；对于求解Mandelbrot集合这类计算量集中在中间的随机循环结构，Dynamic调度策略优于其它策略，new_guided策略的性能介于Dynamic调度和Guided调度之间。 随着多核处理器的问世和发展，多线程程序设计也已经成为一个不可回避的问题。稀疏矩阵向量乘(SpMV, Sparse Matrix-Vector Multiplication)是一个十分重要且经常被大量调用的科学计算内核。SpMV的存储访问一般都极不规则，导致现有的SpMV算法效率都比较低。目前，多核处理器芯片上的内核数量正在逐步增加。这使得在多核处理器上对SpMV进行并行化加速变得非常重要。本文介绍了稀疏矩阵的两种常用的存储格式CSR和BCSR，并采用OpenMP实现了SpMV的多核并行化。此外，本文还讨论了寄存器分块算法、压缩列索引等优化技术，以及不同调度策略对多线程并行后的SpMV的影响。在曙光天阔服务器S4800A1上的测试表明，大部分矩阵都取得了可扩展、甚至是超线性的加速比，但是对于部分规模较大的矩阵，加速效果并不明显。在我们的测试中，与基于CSR实现的多线程SpMV相比，采用寄存器分块算法优化后的SpMV运算速度平均提高了28.09%。在基于CSR实现的多线程SpMV中，采用列索引优化技术后的程序比优化前的速度平均提高了13.05%。此外，本文实现了一种基于非零元个数的调度策略。在该策略中，每个线程处理几乎相同数量的非零元。我们将它和OpenMP标准提供的三种调度策略进行了测试和分析。测试结果表明：与OpenMP提供的调度策略相比，基于非零元个数的调度策略能取得更好的负载平衡；Dynamic调度和Guided调度在多线程SpMV中的性能基本相当，均优于Static调度策略。