The influence of hard-segments on two-phase structure and shape memory properties of PCL-based segmented polyurethanes

Poly(epsilon-caprolactone)-based segmented polyurethanes (PCLUs) were prepared from poly(epsilon-caprolactone) diol, diisocyanates (DI), and 1,4-butanediol. The DIs used were 4,4'-diphenylmethane diisocyanate (MDI), 2,4-toluenediisocyanate (TDI), iso-phorone diisocyanate (IPDI), and hexamethylene diisocyanate (HDI). Differential scanning calorimetry, small-angle X-ray scattering, and dynamic mechanical analysis were employed to characterize the two-phase structures of all PCLUs. It was found that HDI- and MDI-based PCLUs had higher degree of microphase separation than did IPDI- and TDI-based PCLUs, which was primarily due to the crystallization of HDI- and MDI-based hard-segments. As a result, the HDI-based PCLU exhibited the highest recovery force up to 6 MPa and slowest stress relaxation with increasing temperature. Besides, it was found that the partial damage in hard-segment domains during the sample deformation was responsible for the incomplete shape-recovery of PCLUs after the first deformation, but the damage did not develop during the subsequent deformation.

Negative differential resistance and memory effect in diodes based on 1,4-dibenzyl C60 and zinc phthalocyanine doped polystyrene hybrid material

Negative differential resistance (NDR) and memory effect were observed in diodes based on 1,4-dibenzyl C60 (DBC) and zinc phthalocyanine doped polystyrene hybrid material. Certain negative starting sweeping voltages led to a reproducible NDR, making the hybrid material a promising candidate in memory devices. It was found that the introduction of DBC enhanced the ON/OFF current ratio and significantly improved the memory stability. The ON/OFF current ratio was up to 2 orders of magnitude. The write-read-erase-reread cycles were more than 10(6), and the retention time reached 10 000 s without current degradation.

Memory devices based on lanthanide (SM3+, EU3+, Gd3+) complexes

Memory effects in single-layer organic light-emitting devices based on Sm3+, Gd3+, and Eu3+ rare earth complexes were realized. The device structure was indium-tin-oxide (ITO)/3,4-poly(ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT)/Poly(N-vinyl carbazole) (PVK): rare earth complex/LiF/Ca/Ag. It was found experimentally that all the devices exhibited two distinctive bistable conductivity states in current-voltage characteristics by applying negative starting voltage, and more than 10(6) write-read-erase-reread cycles were achieved without degradation. Our results indicate that the rare earth organic complexes are promising materials for high-density, low-cost memory application besides the potential application as organic light-emitting materials in display devices.

Performance improvement by charge trapping of doping fluorescent dyes in organic memory devices

We studied the memory effect in the devices consisting of dye-doped N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine sandwiched between indium-tin oxide and Ag electrodes. It was found that the on/off current ratio was greatly improved by the doped fluorescent dyes compared with nondoping devices. A mechanism of charge trapping was demonstrated to explain the improvement of the memory effect. For the off state, the conduction process is dominated by the trapping current, which is a characteristic of the space-charge limited current, whereas the on state is dominated by the detrapping current, and interpreted by Poole-Frenkel emission.

Negative differential resistance and multilevel memory effects in organic devices

Negative differential resistance ( NDR) and multilevel memory effects were obtained in organic devices consisting of an anthracene derivative, 9,10-bis-{ 9,9-di-[ 4-(phenyl-p-tolyl-amino)-phenyl]-9H-fluoren-2-yl}-anthracene ( DAFA), sandwiched between Ag and ITO electrodes. The application of a negative bias voltage leads to negative differential resistance in current-voltage characteristics and different negative voltages produce different conductance currents, resulting in the multilevel memory capability of the devices. The NDR property has been attributed to charge trapping at the DAFA/Ag interface. This opens up a wide range of application possibilities of such organic-based NDR devices in memory and logic circuits.

Polylactide-based polyurethane and its shape-memory behavior

A series of polylactide polyurethanes (PLAUs) were synthesized from poly(L-lactide) diols, hexamethylene diisocyanate (HDI), and 1,4-butanediol (BDO). Their thermal and mechanical properties and shape-memory behavior were studied by infrared spectroscopy (IR), differential scanning calorimetry (DSC), wide angle X-ray diffraction (WAXID), tensile testing, and thermal mechanical analysis (TMA). The T(g)s of these polymers were in the range of 33-53 degrees C, and influenced by the Mn of the PLA diol and the ratio of the soft-segment to the hard-segment. These materials can restore their shapes almost completely after 150% elongation or twofold compression. By changing the M-n of the PLA diol and the ratio of the hard-to-soft-segment, their Ts and shape-recovery temperatures can be adjusted to the neighborhood of the body temperature. Therefore, these PLAUs are expected to find practical medical applications.

Impact of astaxanthin-enriched algal powder of Haematococcus pluvialis on memory improvement in BALB/c mice

The impact of astaxanthin-enriched algal powder on auxiliary memory improvement was assessed in BALB/c mice pre-supplemented with different dosages of cracked green algal (Haematococcus pluvialis) powder daily for 30 days. The supplemented mice were first tested over 8 days to find a hidden platform by swimming in a Morris water maze. Then, for 5 days, the mice were used to search for a visible platform in a Morris water maze. After that, the mice practised finding a safe place-an insulated platform in a chamber-for 2 days. During these animal experimental periods, similar algal meals containing astaxanthin at 0, 0.26, 1.3 and 6.4 mg/kg body weight were continuously fed to each group of tested mice. Profiles of latency, distance, speed and the direction angle to the platforms as well as the diving frequency in each group were measured and analyzed. The process of mice jumping up onto the insulated platform and diving down to the copper-shuttered bottom with a 36 V electrical charge were also monitored by automatic video recording. The results of the Morris maze experiment showed that middle dosage of H. pluvialis meals (1.3 mg astaxanthin/kg body weight) significantly shortened the latency and distance required for mice to find a hidden platform. However, there was no obvious change in swim velocity in any of the supplemented groups. In contrast, the visible platform test showed a significant increase in latency and swim distance, and a significant decrease in swim speed for all groups of mice orally supplemented with H. pluvialis powder compared to the placebo group (P < 0.05 or P < 0.01). Mice supplemented with the algal meal hesitantly turned around the original hidden platform, in contract to mice supplemented with placebo, who easily forgot the original location and accepted the visible platform as a new safe place. These results illustrate that astaxanthin-enriched H. pluvialis powder has the auxiliary property of memory improvement. The results from the platform diving test showed that the low and middle dosage of H. pluvialis powder, rather that the high dosage, increased the latency and reduced the frequency of diving from the safe insulated platform to the electrically stimulated copper shutter, especially in the low treatment group (P < 0.05). These results indicate that H. pluvialis powder is associated with dose-dependent memory improvement and that a low dosage of algal powder (<= middle treatment group) is really good for improving the memory.

BIST技术及其在Memory中的应用

阐述内建自检测(BIST)技术的特点、结构和原理,并介绍其在Memory单元电路中的实现过程。