VALENCE STATE EQUILIBRIA BETWEEN COBALT AND MANGANESE IONS AND MAGNETIC-PROPERTIES OF LACO0.9MN0.1O3

According to the thermodynamic equilibria between the low spin state Co(III) (t2g6e(g)0) ion and the high spin state Co3+ (t2g4e(g)2) ion and between the cobalt and manganese ions with different valence state and spin state, an approximate semiempirical f

SPIN AND VALENCE STATE EQUILIBRIA OF COBALT AND MAGNETIC-PROPERTIES OF LACOO3

On the basis of the spin and valence state equilibria and superexchange interaction of the various cobalt ions in LaCoO3, an approximate semiempirical formula has been proposed and used to calculate magnetic susceptibilities of LaCoO3 over a wide temperature range (100-1200 K). The results indicate that there are thermodynamic equilibria between the low spin state Co(III) (t2g6e(g)0) ion, the high spin state Co3+ (t2g4e(g)2) ion, the Co(II) (t2g6e(g)1) ion and the Co(IV) (t2g5e(g)0) ion in LaCoO3. The energy difference between the low spin state Co(III) and the high spin state Co3+ is about 0.006 eV. The content of the low spin state Co(III) ion is predominant in LaCoO3 and the content of the high spin state Co3+ ion varies with temperature, reaching a maximum at about 350 K, then decreasing gradually with increasing temperature. At low temperature the contents of the Co(II) ion and the Co(IV) ion in LaCoO3 are negligible, while above 200 K the contents of both the Co(II) ion and the Co(IV) ion increase with increasing temperature; however, the content of the Co(II) ion always is larger than that of the Co(IV) ion at any temperature. These calculated results are in good agreement with experimental results of the Mossbauer effect, magnetic susceptibility and electrical conductivity of LaCoO3.

VALENCE AND MAGNETIC-PROPERTIES OF YSR2-XCAXV3O9-Y

Compounds YSr22-xCaxVO9-y have an orthorhombic symmetry. XPS results show that the vanadium ions exist in the mixing valence in the system. Temperature dependence of magnetic susceptibility represents the Curie-Weiss law. The valence state of vanadium obviously affects the magnetic properties of YSr2-xCaxV3O9-y. The system exhibits a paramagnetic behavior from 300K to 1073K.

INVESTIGATION OF THE ELECTRICAL AND MAGNETIC-PROPERTIES OF YSR2-XCAXV3O9-Y

All the members of the solid solution of YSr2-xCaxV3O9-y have the orthorhombic symmetry. Their electrical and magnetic properties have been studied. The magnetic susceptibility and electrical resistivity increase gradually with x. The system shows paramagnetic behavior both at 300 K and at 77 K. It is shown that a change of valence state of vanadium obviously affects the electrical and magnetic properties of the solid solution.

STUDIES ON THE ELECTRICAL AND MAGNETIC-PROPERTIES FOR LASR2-XCAXV3O9+/-Y

The electrical and magnetical properties of LaSr(2-x)Ca(x)V3O9 +/- y have been investigated. The compounds are antiferromagnetic. They show a metallic conduction other than semiconductivity. The trivalent and tetravalent vanadium ions coexist in the system. The magnetic susceptibility increases and the resistivity decreases at room temperature with the increase of x value. It is shown that the change of the valency state of vanadium obviously influences the electrical and magnetical properties of the system.

Structural stability and magnetic coupling in CaCu3Co4O12 from first principles

The structural, electronic and magnetic properties of CaCu3Co4O12 were studied by use of the full-potential linearized augmented plane wave method. The calculated results indicate that CaCu3Co4O12 is stable both thermodynamically and mechanically. Both GGA (generalized gradient approximation) and GGA + U methods predict that CaCu3Co4O12 is metallic. The ferromagnetic configuration is only slightly more stable in energy compared with the non-magnetic configuration (3.7 meV), suggesting that they are competitive for being the ground state. Co is in the low spin state (S = 1/2).

Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD

InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at similar to 0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.

Magnetic properties of tin-doped magnetite nanoparticles

Structural and magnetic characteristics of Fe3-xSnxO4 (x < 0.3) nanoparticles synthesized using the precipitation exchange method have been investigated by X-ray diffraction, transmission electron microscope, Mossbauer spectra, X-ray photoelectron spectroscopy and magnetization measurement. The mean particle dimension decreases from 8 to 6 nm, the lattice parameters enlarge, the saturation magnetization decreases, as well as the magnetization and the coercive field increase, with increasing tin-content. The paramagnetic property of the specimens indicates that the replacement of Fe3+ by Sn4+ on the octahedral sites of Fe3O4 causes a progressive lowering of the Curie temperature and the Curie temperatures of the materials are all lower than that of crystallite tin-doped magnetite. This striking debasing is due to the lessening of the grain size. This is the smallest size reported thus far for paramagnetic tin-doped magnetite particles. (c) 2006 Elsevier B.V. All rights reserved.

Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001)

InAs and InxGa1-xAs (x = 0.2 and 0.5) self-organized quantum dots (QDs) were fabricated on GaAs(0 0 1) by molecular beam epitaxy (MBE) and characterized by atomic force microscopy (AFM), transmission electron microscopy (TEM), acid photoluminescence polarization spectrum (PLP). Both structural and optical properties of InxGa1-xAs QD layer are apparently different from those of InAs QD layer. AFM shows that InxGa1-xAs QDs tend to be aligned along the [1 (1) over bar 0] direction, while InAs QDs are distributed randomly. TEM demonstrates that there is strain modulation along [1 1 0] in the InxGa1-xAs QD layers. PLP shows that In0.5Ga0.5As islands present optical anisotropy along [1 1 0] and [1 (1) over bar 0] due to structural and strain field anisotropy for the islands. (C) 2001 Elsevier Science B.V. All rights reserved.

Magnetic and electronic properties of CaCu3Cr4O12 and CaCu3Cr2Sb2O12 by first-principles density functional calculation

The electronic and magnetic properties of CaCu3Cr4O12 and CaCu3Cr2Sb2O12 are investigated by the use of the full-potential linearized augumented plane wave (FPLAPW) method. The calculated results indicate that CaCu3- Cr4O12 is a ferrimagnetic and half-metallic compound, in good agreement with previous theoretical studies. CaCu3- Cr2Sb2O12 is a ferrimagnetic semiconductor with a small gap of 0.136 eV. In both compounds, because Cr4+ 3d (d(2)) and Cr3+ 3d (d(3)) orbitals are less than half filled, the coupling between Cr-Cu is antiferromagnetic, whereas that between Cu-Cu and Cr-Cr is ferromagnetic. The total net spin moment is 5.0 and 3.0 mu(B) for CaCu3Cr4O12 and CaCu3Cr2Sb2O12, respectively. In CaCu3Cr4O12, the 3d electrons of Cr4+ are delocalized, which strengthens the Cr-Cr ferromagnetic coupling. For CaCu3Cr2Sb2O12, the doping of nonmagnetic ion Sb5+ reduces the Cr-Cr ferromagnetic coupling, and the half-filled Cr3+ t(2g) (t(2g)(3)) makes the chromium 3d electrons localized. In addition, the ordering arrangement of the octahedral chromium and antimony ions also prevents the delocalization of electrons. Hence, CaCu3Cr2Sb2O12 shows insulating behavior, in agreement with the experimental observation.

Influence of LiB3O5 structure on microstructure and optical properties of ZrO2, thin films prepared by electron beam evaporation

ZrO2 thin films were deposited bill using an electron beam evaporation technique on three kinds of lithium triborate (LiB3O5 or LBO) substrates with the surfaces at specified crystalline orientations. The influences of the LBO structure on the structural and optical properties of ZrO2 thin films are studied by spectrophotometer and x-ray diffraction. The results indicate that the substrate structure has obvious effects on the structural end optical properties of the film: namely. the ZrO2 thin film deposited on the X-LBO, Y-LBO and Z-LBO orients to m(-212), m(021) and o(130) directions. It is also found that the ZrO2 thin film with m(021) has the highest refractive index and the least lattice misfit.

Influence of different post-treatments on the structure and optical properties of zinc oxide thin films

Zinc oxide (ZnO) films with c-oriented were grown on fused quartz glass substrates at room temperature using dc reactive magnetron sputtering. The as-grown films were annealed at 700 degrees C in air and bombarded by ion beam, respectively. The effects of post-treatments on the structural and optical properties of the ZnO films were investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. The XRD spectra indicate that the crystal quality of ZnO films has been improved by both the post-treatments. Compared with the as-grown sample, both annealed and bombarded samples exhibited blueshift in the UV emission peaks, and a strong green emission was found in the annealed ZnO film. In both optical transmittance and absorption spectra, a blueshift of the band-gap edge was observed in the bombarded film, while a redshift was observed in the annealed film. (c) 2004 Elsevier B.V. All rights reserved.

Impacts of hydrogen dilution on growth and optical properties of a-SiC : H films

Hydrogenated amorphous silicon-carbon (a-SiC:H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) with a fixed methane to silane ratio ([CH4]/[SiH4]) of 1.2 and a wide range of hydrogen dilution (R-H=[H-2]/[SiH4 + CH4]) values of 12, 22, 33, 102 and 135. The impacts of RH on the structural and optical properties of the films were investigated by using UV-VIS transmission, Fourier transform infrared (FTIR) absorption, Raman scattering and photoluminescence (PL) measurements. The effects of high temperature annealing on the films were also probed. It is found that with increasing hydrogen dilution, the optical band gap increases, and the PL peak blueshifts from similar to1.43 to 1.62 eV. In annealed state, the room temperature PL peak for the low R-H samples disappears, while the PL peak for the high R-H samples appears at similar to 2.08 eV, which is attributed to nanocrystalline Si particles confined by Si-C and Si-O bonds.

Formation of ferromagnetic clusters in GaAs matrix and GaAs/AlGaAs superlattice through Mn ion implantation at two different temperatures

Different submicron ferromagnets are fabricated into GaAs and GaAs/AlGaAs superlattice through ion implantation at two different temperatures followed by thermal annealing. The structural and magnetic properties of the granular film are studied by an atomic force microscope, X-ray diffraction and alternating gradient magnetometer. By analyzing the saturation magnetization M-s, remanence M-r, coercivity H-c and remanence ratio S-q, it is confirmed that both MnGa and MnAs clusters are formed in the 350degreesC-implanted samples whereas only MnAs clusters are formed in the room-temperature implanted samples. (C) 2004 Elsevier B.V. All rights reserved.