Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001)
Data(s) |
2001
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Resumo |
InAs and InxGa1-xAs (x = 0.2 and 0.5) self-organized quantum dots (QDs) were fabricated on GaAs(0 0 1) by molecular beam epitaxy (MBE) and characterized by atomic force microscopy (AFM), transmission electron microscopy (TEM), acid photoluminescence polarization spectrum (PLP). Both structural and optical properties of InxGa1-xAs QD layer are apparently different from those of InAs QD layer. AFM shows that InxGa1-xAs QDs tend to be aligned along the [1 (1) over bar 0] direction, while InAs QDs are distributed randomly. TEM demonstrates that there is strain modulation along [1 1 0] in the InxGa1-xAs QD layers. PLP shows that In0.5Ga0.5As islands present optical anisotropy along [1 1 0] and [1 (1) over bar 0] due to structural and strain field anisotropy for the islands. (C) 2001 Elsevier Science B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Lin F; Wu J; Jiang WH; Cui H; Wang ZG .Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) ,JOURNAL OF CRYSTAL GROWTH,2001 ,223(1-2):55-60 |
Palavras-Chave | #半导体材料 #low dimensional structures #molecular beam epitaxy #semiconducting III-V materials #MOLECULAR-BEAM EPITAXY #GAAS #GROWTH #PHOTOLUMINESCENCE #SURFACES #ARRAYS #LASER |
Tipo |
期刊论文 |