镜像核~(13)N-~(13)C和~(15)N-~(15)O中的激发态晕或皮(英文)

用非线性相对论平均场对两对镜像核13N 13C和15N 15O进行了研究. 发现无论在基态还是激发态, 用两套参数所得的结合能都跟实验值很接近. 计算结果显示13N的第一激发态 (2s1 /2 )和第三激发态(1d5 /2 )各存在一个非束缚的质子晕, 而13C的第三激发态 (1d5 /2 )存在一个弱束缚的中子皮. 另外研究表明, 在另一对镜像核15N 15O的第二激发态 (2s1 /2 )和第一激发态 (2s1 /2 )分别存在一个中子晕和质子皮.

15.14 MeV/u ~(136)Xe离子引起的单粒子效应(英文)

研究了 1 5.1 4MeV/u136 　Xe离子在不同批次的 3 2k× 8bits静态存储器中所引起的单粒子效应 .获得了单粒子翻转和单粒子闭锁截面与入射角度的依赖关系 .将单粒子效应截面与灵敏区中沉积的能量相联系 ,而不是线性能量转移(LET)值 .估计了灵敏体积的深度和死层的厚度 .

利用离子注入~(15)N靶研究超低能区~(15)N(p,α)~(12)C核反应

描述了利用离子注入固体靶测量15N(p ,α) 12 C核反应微分截面的实验过程和方法 ,给出了在163keV≤Ec≤ 360keV能区 90°方向上的微分截面测量结果和激发函数曲线 ,并对该反应的基本特征进行了分析和描述。

Multi-electron processes in 4.15-11.08 keV/u(13)C(6+) on argon collisions

The relative partial cross sections for C-13(6+)-Ar collisions at 4.15-11.08 keV/u incident energy are measured. The cross-section ratios sigma(2E)/sigma(SC), sigma(3E)/sigma(SC), sigma(4E)/sigma(SC) and sigma(5E)/sigma(SC) are approximately the constants of 0.51 +/- 0.05, 0.20 +/- 0.03, 0.06 +/- 0.03 and 0.02 +/- 0.01 in this region. The significance of the multi-electron process in highly charged ions (HCIs) with argon collisions is demonstrated (sigma(ME)/sigma(SC) as high as 0.79 +/- 0.06). In multi-electron processes, it is shown that transfer ionization is dominant while pure electron capture is weak and negligible. For all reaction channels, the cross-sections are independent of the incident energy in the present energy region, which is in agreement with the static characteristic of classic models, i.e. the molecular Coulomb over-the-barrier model (MCBM), the extended classical over-the-barrier (ECBM) and the semiempirical scaling laws (SL). The result is compared with these classical models and with our previous work of C-13(6+)-Ne collisions