Nd：（La，Sr）（Al，Ta）O3晶体的生长及光谱性能的研究

应用中频感应提拉法生长了新型的Nd：（La，Sr）（Al，Ta）O3（Nd^3＋：LSAT）晶体。运用电感耦合等离子体原子发射光谱仪（ICPAES）测定Nd^3＋离子在Nd^3＋：LSAT晶体中的分凝系数为0．587。X射线粉末衍射（XRPD）测试结果表明Nd^3＋：LSAT晶体与LSAT晶体同构。研究了不同退火条件对晶体光谱性能的影响。分析了Nd^3＋：LSAT晶体的光谱性能，Nd^3＋：LSAT晶体的荧光寿命为290μs。比较了Nd^3＋：LSAT和Nd^3＋：YAG，Nd^3＋：YVO3等晶体的光谱

Spectroscopic properties of Nd3+:(La,Sr)(Al,Ta)O-3 crystal

A new laser crystal Nd3+:(La, Sr)(Al, Ta)O-3 (abbreviated as Nd3+:LSAT) has been grown by the conventional Czochralski method. The absorption and luminescence spectra of trivalent neodymium in Nd3+:LSAT crystal were measured at room temperature. The value of absorption and emission cross-section was calculated. The Judd-Ofelt analysis was applied to the crystal to get the phenomenological parameters (Omega(i), i = 2,4,6), the line strengths, the radiative transition rates, the branching ratios and the radiative lifetime. (C) 2006 Elsevier B.V. All rights reserved.

High temperature annealing effect on structure, optical property and laser-induced damage threshold of Ta2O5 films

Ta2O5 films were deposited by conventional electron beam evaporation method and then annealed in air at different temperature from 873 to 1273 K. It was found that the film structure changed from amorphous phase to hexagonal phase when annealed at 1073 K, then transformed to orthorhombic phase after annealed at 1273 K. The transmittance was improved after annealed at 873 K, and it decreased as the annealing temperature increased further. The total integrated scattering (TIS) tests and AFM results showed that both scattering and root mean square (RMS) roughness of films increased with the annealing temperature increasing. X-ray photoelectron spectroscopy (XPS) analysis showed that the film obtained better stoichiometry and the O/Ta ratio increased to 2.50 after annealing. It was found that the laser-induced damage threshold (LIDT) increased to the maximum when annealed at 873 K, while it decreased when the annealing temperature increased further. Detailed damaged models dominated by different parameters during annealing were discussed. (C) 2008 Elsevier B. V. All rights reserved.

Influence of SiO2 additional layers on the laser induced damage threshold of Ta2O5 films

A series or Ta2O5 films with different SiO2 additional layers including overcoat, undercoat and interlayer was prepared by electron beam evaporation under the same deposition process. Absorption of samples was measured using the surface thermal lensing (STL) technique. The electric field distributions of the samples were theoretical predicted using thin film design software (TFCalc). The laser induced damage threshold (LIDT) was assessed using an Nd:YAG laser operating at 1064 nm with a pulse length of 12 ns. It was found that SiO2 additional layers resulted in a slight increase of the absorption, whereas they exerted little influence on the microdefects. The electric field distribution among the samples was unchanged by adding an SiO2 overcoat and undercoat, yet was changed by adding an interlayer. SiO2 undercoat. The interlayer improved the LIDT greatly, whereas the SiO2 overcoat had little effect on the LIDT. (C) 2007 Elsevier Ltd. All rights reserved.

Structure and optical properties of Nb2O5 sculptured thin films by glancing angle deposition

Nb2O5 sculptured thin. films deposited by electron beam evaporation with glancing angle deposition were prepared. Nb2O5 sculptured thin. films with tilted columns are optical anisotropy. XRD, SEM, UV-vis-NIR spectra are employed to characterize the microstructure and optical properties. The maximum of birefringence (Delta n) is up to 0.045 at alpha = 70 degrees with packing density of 0.487. With increasing the deposition angle, refractive index and packing density of Nb2O5 STF are decreasing. The relationship among deposition parameter, microstructure and optical properties was investigated in detail. (C) 2008 Elsevier B. V. All rights reserved.

小麦Ta-JA1基因功能的初步分析

茉莉酸是植物信号传递以及诱导植物产生防御反应的关键诱导激素之一，广泛存在于高等植物中，并在植物病虫害防御的信号传导通路中起着重要的作用。茉莉酸可以诱导植物抗性基因表达，产生茉莉酸调节蛋白来抵御病虫害。在禾本科的大麦中发现了一个分子量在32kDa茉莉酸调节蛋白家族（JPR-32），但其功能一直没有深入的研究。 木菠萝素是从桂木属木菠萝的种子中分离的一种可以和半乳糖或甘露糖特异结合的凝集素。近来的研究表明，植物的凝集素具有多种功能，主要有：可作为储存蛋白，对储存物质进行包装、运输;作为植物细胞的有丝分裂因子，参与细胞壁的延伸;生长调节及运输碳水化合物;具有酶的功能;参与豆科植物感染结瘤;协同其它防御蛋白参与植物防御反应。植物凝集素的功能复杂各异，对木菠萝素的功能研究更是相对较少。 本文在小麦中克隆出的cDNA（本文命名为Ta-JA1基因），该基因cDNA全长1158bp，编码304个氨基酸，分子量32.7kDa，与JPR-32蛋白质家族的基因序列具有很高的同源性。从蛋白结构分析中显示，Ta-JA1基因有两个典型的功能结构域：N末端的茉莉酸诱导的防御反应结构域和C末端的木菠萝素相关结构域。为我们研究这个新的蛋白家族的功能提供了一个典型的模式蛋白。本文即从Ta-JA1基因出发来研究这一类蛋白的相关功能。在此，我们构建了Ta-JA1基因的pBI121表达载体，并通过农杆菌介导叶圆片法转化烟草，成功获得转基因植株。通过硫酸铵盐析法获得了植物Ta-JA1蛋白粗提品，效率在0.01%左右。使用蛋白粗提物进行凝血效应分析，转基因植株的蛋白粗样品可以凝集新鲜的兔血，说明Ta-JA1蛋白具有植物凝集素的基本性质。选取烟草上典型的三类病原体：烟草花叶病毒，烟草黑胫病菌和烟草野火病菌。分别对转基因烟草进行侵染，并观察统计其抗病性，发现转基因烟草对烟草花叶病毒和烟草黑胫病具有显著的抗性，对烟草野火病也具有一定的抑制作用。通过与野生型烟草在抗盐，抗旱，抗虫和生长发育等方面的统计比较与分析，可以看出，基因烟草在抗逆性上也有了显著的提高，虽然Ta-JA1的过量表达没有影响转基因烟草的整体生长进程，开花期和结实情况与对照烟草相比也无明显变化，但是转基因烟草的种子在萌发时间上有了显著提高，一定数量上还表现出愈合的花冠筒上出现不同程度开裂，花冠筒上有附生舌状花瓣，及带有花瓣状颜色的花萼等异常花表型。

B itte r an d Sw e e t /Um am i Ta s te Re c ep to rs w ith D iffe ren tly Evo lu tio n a ry Pa thw ays

通过生物信息学和系统发育学分析,研究了苦味受体和甜味/鲜味受体的进化途径。结果显示,苦味受体 和甜味/鲜味受体在进化上具有远相关,并且具有不同的进化途径,提示这可能是导致这些受体具有不同功能,传 导不同味觉的原因。

在体大鼠海马区侧枝联合纤维通路和TA通路的不同空间整合特性

在麻醉Wistar大鼠上,结合脑室给药,应用双电极刺激技术刺激海马独立的两条侧枝／联合纤维通 路、TA通路,并在CAl区放射层记录兴奋性突触后电位(EPSP),对海马CAl区锥体细胞近、远端树突EPSP 的空间整合进行了初步探讨。结果表明,海马CAl区锥体细胞近、远端树突的空间整合都是亚线性的;近端树 突的空间整合不受期望值大小的影响,但远端树突的空间整合随期望值增加而减小(更趋于亚线性)。此外, 荷包牡丹碱没有影响EPSP的空间整合;但瞬时A型钾通道(IAK+)的拮抗剂氨基吡啶-4却使得近端树突的 空间整合趋于线性发展。本研究表明,海马CAl锥体细胞近、远端树突不同的被动、主动特征使它们具有了不 同的空间整合特性。由于近端树突接受海马内部侧枝／联合纤维投射的信息,远端树突通过TA通路接受内嗅皮 层投射的信息,由此提示,CAl区锥体细胞对来自海马内部和直接来自皮层的信息输入采用了不同的整合方 式。

Elasticity, band structure, and piezoelectricity of BexZn1-xO alloys

Lattice constants, elasticity, band structure and piezoelectricity of hexagonal wideband gap BexZn1-xO ternary alloys are calculatedusing firstprinciples methods. The alloys' lattice constants obey Vegard's law well. As Be concentration increases, the bulk modulus and Young's modulus of the alloys increase, whereas the piezoelectricity decreases. We predict that BexZn1-xO/GaN/substrate (x = 0.022) multilayer structure can be suitable for high-frequency surface acoustic wave device applications. Our calculated results are in good agreement with experimental data and other theoretical calculations. (c) 2008 Elsevier B.V. All rights reserved.

Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides

The Mg-Ga acceptor energy levels in GaN and random Al8In4Ga20N32 quaternary alloys are calculated using the first-principles band-structure method. We show that due to wave function localization, the MgGa acceptor energy level in the alloy is significantly lower than that of GaN, although the two materials have nearly identical band gaps. Our study demonstrates that forming AlxInyGa1-x-yN quaternary alloys can be a useful approach to lower acceptor ionization energy in the nitrides and thus provides an approach to overcome the p-type doping difficulty in the nitride system.

Elasticity, band-gap bowing, and polarization of AlxGa1-xN alloys

Elastic constants, the bulk modulus, Young's modulus, band-gap bowing coefficients, spontaneous and piezoelectric polarizations, and piezoelectric coefficients of hexagonal AlxGa1-xN ternary alloys are calculated using first-principles methods. The fully relaxed structures and the structures subjected to homogeneous biaxial and uniaxial tension are investigated. We show that the biaxial tension in the plane perpendicular to the c axis and the uniaxial tension along the c axis all reduce the bulk modulus, whereas they reduce and enhance Young's modulus, respectively. We find that the biaxial and uniaxial tension can enhance the bowing coefficients. We also find that the biaxial tension can enhance the total polarization, while the uniaxial tension will suppress the total polarization. (C) 2008 American Institute of Physics.

Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions

(110) ZnO/(001) Nb-1 wt %-doped SrTiO3 n-n type heteroepitaxial junctions were fabricated using the pulse laser deposition method. A diodelike current behavior was observed. Different from conventional p-n junctions or Schottky diodes, the diffusion voltage was found to increase with temperature. At all temperatures, the forward current was perfectly fitted on the thermionic emission model. The band bending at the interface can qualitatively explain our results, and the extracted high ideality factor at low temperatures, as well as large saturation currents, is ascribed to the deep-level-assisted tunneling current through the junction. (C) 2008 American Institute of Physics.

Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE

AlInGaN quaternary alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). AlInGaN quaternary alloys with different compositions were acquired by changing the Al cell's temperature. The streaky RHEED patterns were observed during AlInGaN quaternary alloys growth. Scanning Electron Microscope (SEM), Rutherford back-scattering spectrometry (RBS), X-Ray diffraction (XRD) and Cathodoluminescence (CL) were used to characterize the structural and optical properties of the AlInGaN alloys. The experimental results show that the AlInGaN quaternary alloys grow on the GaN buffer in the layer-by-layer growth mode. When the Al cell's temperature is 920 degrees C, the Al/In ratio in the AlInGaN quaternary alloys is about 4.7, and the AlInGaN can acquire better crystal and optical quality. The X-ray and CL full-width at half-maximum (FWHM) of the AlInGaN are 5arcmin and 25nm, respectively.

Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage

CaCu3Ti(4-x)Nb(x)O(12) (x = 0, 0.01, 0.08, 0.2) ceramics were fabricated by a conventional solid-state reaction method. The ceramics showed the body-centered cubic structure without any foreign phases and the grain size decreases with Nb doping. Two Debye-type relaxations were observed for the Nb-doped samples at low frequency and high frequency, respectively. The complex electric modulus analysis revealed that the surface layer, grains and grain boundaries contributed to the dielectric constant. The low-frequency dielectric constant relative to the surface layer decreased to a minimum and then increased with the dc bias voltage at 100 Hz, which were well explained in terms of a model containing two metal oxide semiconductors in series, confirming the surface layer in the ceramics. The shift voltage V-B corresponding to the minimal capacitance increased with increase of the composition x. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Band-gap bowing and p-type doping of (Zn, Mg, Be)O wide-gap semiconductor alloys: a first-principles study

Using a first-principles band-structure method and a special quasirandom structure (SQS) approach, we systematically calculate the band gap bowing parameters and p-type doping properties of (Zn, Mg, Be)O related random ternary and quaternary alloys. We show that the bowing parameters for ZnBeO and MgBeO alloys are large and dependent on composition. This is due to the size difference and chemical mismatch between Be and Zn(Mg) atoms. We also demonstrate that adding a small amount of Be into MgO reduces the band gap indicating that the bowing parameter is larger than the band-gap difference. We select an ideal N atom with lower p atomic energy level as dopant to perform p-type doping of ZnBeO and ZnMgBeO alloys. For N doped in ZnBeO alloy, we show that the acceptor transition energies become shallower as the number of the nearest neighbor Be atoms increases. This is thought to be because of the reduction of p-d repulsion. The N-O acceptor transition energies are deep in the ZnMgBeO quaternary alloy lattice-matched to GaN substrate due to the lower valence band maximum. These decrease slightly as there are more nearest neighbor Mg atoms surrounding the N dopant. The important natural valence band alignment between ZnO, MgO, BeO, ZnBeO, and ZnMgBeO quaternary alloy is also investigated.