High-power operation of quantum cascade lasers endured prolonged air-oxidation

High-power strain-compensated In1-xGaxAs/ln(1-y)Al(y)As quantum cascade lasers (lambda similar to 5.5 mu m) are demonstrated. Peak power at least 1.2W per facet for a 32 mu mx2mm uncoated laser stored in ambient condition for 240 days, is obtained at 80 K. Considering the collection efficiency of 60%, the actual output power is 4W at this temperature.

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

Room temperature operation of photonic-crystal distributed-feedback quantum cascade lasers with single longitudinal and lateral mode performance

We demonstrate room temperature operation of photonic-crystal distributed-feedback quantum cascade lasers emitting at 4.7 mu m. A rectangular photonic crystal lattice perpendicular to the cleaved facet was defined using holographic lithography. The anticrossing of the index- and Bragg-guided dispersions of rectangular lattice forms the band-edge mode with extended mode volume and reduced group velocity. Utilizing this coupling mechanism, single mode operation with a near-diffractive-limited divergence angle of 12 degrees is obtained for 33 mu m wide devices in a temperature range of 85-300 K. The reduced threshold current densities and improved heat dissipation management contribute to the realization of devices' room temperature operation.

Design and operation of integrated pilot-scale dimethyl ether synthesis system via pyrolysis/gasification of corncob

The integrated pilot-scale dimethyl ether (DME) synthesis system from corncob was demonstrated for modernizing utilization of biomass residues. The raw bio-syngas was obtained by the pyrolyzer/gasifier at the yield rate of 40-45 Nm(3)/h. The content of tar in the raw bio-syngas was decreased to less than 20 mg/Nm(3) by high temperature gasification of the pyrolysates under O-2-rich air. More than 70% CO2 in the raw bio-syngas was removed by pressure-swing adsorption unit (PSA). The bio-syngas (H-2/CO approximate to 1) was catalytically converted to DME in the fixed-bed tubular reactor directly over Cu/Zn/Al/HZSM-5 catalysts. CO conversion and space-time yield of DME were in the range of 82.0-73.6% and 124.3-203.8 kg/m(cat)(3)/h, respectively, with a similar DME selectivity when gas hourly space velocity (GHSV, volumetric flow rate of syngas at STP divided by the volume of catalyst) increased from 650 h(-1) to 1500 h(-1) at 260 degrees C and 4.3 MPa. And the selectivity to methanol and C-2(+) products was less than 0.65% under typical synthesis condition. The thermal energy conversion efficiency was ca. 32.0% and about 16.4% carbon in dried corncob was essentially converted to DME with the production cost of ca. (sic) 3737/ton DME. Cu (111) was assumed to be the active phase for DME synthesis, confirmed by X-ray diffraction (XRD) characterization.

The design and operation of a new clapboard-type internal circulating fluidized-bed gasifier

The design and operation of a new clapboard-type internal circulating fluidized-bed gasifier is proposed in this article. By arranging the clapboard in the bed, the gasifier is thus divided into two regions, which are characterized by different fluidization velocities. The bed structure is designed so that it can guide the circulating flow passing through the two regions, and therefore the feedstock particles entrained in the flow experience longer residence time. The experimental results based on the present new design, operating in the temperature range of 790 degrees C-850 degrees C, indicate that the gas yield is from 1.6-1.9 Nm(3)/kg feedstock, the gas enthalpies are 5,345 kJ/Nm(3) for wood chip and 4,875 kJ/m(3) for rice husk, and a gasification efficiency up to 75% can be obtained.

Design and Operation of A 5.5 MWe Biomass Integrated Gasification Combined Cycle Demonstration Plant

The design and operation of a 5.5 MWe biomass integrated gasification combined cycle (IGCC) demonstration plant, which is located in Xinghua, Jiangsu Province of China, are introduced. It is the largest complete biomass gasification power plant that uses rice husk and other agricultural wastes as fuel in Asia. It mainly consists of a 20 MWt atmospheric circulating fluidized-bed gasifier, a gas-purifying system, 10 sets of 450 kW(e) gas engines, a waste heat boiler, a 1.5 MWe steam turbine, a wastewater treatment system, etc. The demonstration plant has been operating since the end of 2005, and its overall efficiency reaches 26-28%. Its capital cost is less than 1200 USD/kW, and its running cost is about 0.079 USD/kWh based on the biomass price of 35.7 USD/ton. There is a 20% increment on capital cost and 35% decrease on the fuel consumption compared to that of a 1 MW system without a combined cycle. Because only part of the project has been performed, many of the tests still remain and, accordingly, must be reported at a later opportunity.

Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (MQW), respectively.

PULSED ELECTRICAL OPERATION OF 1.5-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS

Vertical cavity surface emitting lasers operating in the 1.3- and 1.5-mu m wavelength ranges are highly attractive for telecommunications applications. However, they are far less well-developed than devices operating at shorter wavelengths. Pulsed electrically-injected lasing at 1.5 mu m, at temperatures up to 240 K, is demonstrated in a vertical-cavity surface-emitting laser with one epitaxial and one dielectric reflector. This is an encouraging result in the development of practical sources for optical fiber communications systems.