High-power operation of quantum cascade lasers endured prolonged air-oxidation
Data(s) |
2006
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Resumo |
High-power strain-compensated In1-xGaxAs/ln(1-y)Al(y)As quantum cascade lasers (lambda similar to 5.5 mu m) are demonstrated. Peak power at least 1.2W per facet for a 32 mu mx2mm uncoated laser stored in ambient condition for 240 days, is obtained at 80 K. Considering the collection efficiency of 60%, the actual output power is 4W at this temperature. High-power strain-compensated In1-xGaxAs/ln(1-y)Al(y)As quantum cascade lasers (lambda similar to 5.5 mu m) are demonstrated. Peak power at least 1.2W per facet for a 32 mu mx2mm uncoated laser stored in ambient condition for 240 days, is obtained at 80 K. Considering the collection efficiency of 60%, the actual output power is 4W at this temperature. zhangdi于2010-03-29批量导入 Made available in DSpace on 2010-03-29T06:06:07Z (GMT). No. of bitstreams: 1 2253.pdf: 1225759 bytes, checksum: c369a60f2a9f5f40657d36fded607ac9 (MD5) Previous issue date: 2006 Chinese Acad Sci, Shanghai Inst Tech Phys.; SE Univ.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; IEEE MTT S.; IEEE Nanjing Joint Chapter.; IEEE Shanghai Sub Sect.; Shanghai Int Culture Assoc.; Chinese Phys Soc.; Chinese Opt Soc.; Chinese Inst Elect. Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Acad Sci, Shanghai Inst Tech Phys.; SE Univ.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; IEEE MTT S.; IEEE Nanjing Joint Chapter.; IEEE Shanghai Sub Sect.; Shanghai Int Culture Assoc.; Chinese Phys Soc.; Chinese Opt Soc.; Chinese Inst Elect. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
Fonte |
Shao, Y (Shao, Ye); Liu, FQ (Liu, Feng-Qi); Li, L (Li, Lu); Lu, XZ (Lu, Xiu-Zhen); Liu, JQ (Liu, Jun-Qi); Wang, ZG (Wang, Zhan-Guo) .High-power operation of quantum cascade lasers endured prolonged air-oxidation .见:IEEE .Conference Digest of the 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics,345 E 47TH ST, NEW YORK, NY 10017 USA ,2006,40-40 |
Palavras-Chave | #半导体材料 |
Tipo |
会议论文 |