High-power operation of quantum cascade lasers endured prolonged air-oxidation


Autoria(s): Shao, Y (Shao, Ye); Liu, FQ (Liu, Feng-Qi); Li, L (Li, Lu); Lu, XZ (Lu, Xiu-Zhen); Liu, JQ (Liu, Jun-Qi); Wang, ZG (Wang, Zhan-Guo)
Data(s)

2006

Resumo

High-power strain-compensated In1-xGaxAs/ln(1-y)Al(y)As quantum cascade lasers (lambda similar to 5.5 mu m) are demonstrated. Peak power at least 1.2W per facet for a 32 mu mx2mm uncoated laser stored in ambient condition for 240 days, is obtained at 80 K. Considering the collection efficiency of 60%, the actual output power is 4W at this temperature.

High-power strain-compensated In1-xGaxAs/ln(1-y)Al(y)As quantum cascade lasers (lambda similar to 5.5 mu m) are demonstrated. Peak power at least 1.2W per facet for a 32 mu mx2mm uncoated laser stored in ambient condition for 240 days, is obtained at 80 K. Considering the collection efficiency of 60%, the actual output power is 4W at this temperature.

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Chinese Acad Sci, Shanghai Inst Tech Phys.; SE Univ.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; IEEE MTT S.; IEEE Nanjing Joint Chapter.; IEEE Shanghai Sub Sect.; Shanghai Int Culture Assoc.; Chinese Phys Soc.; Chinese Opt Soc.; Chinese Inst Elect.

Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Chinese Acad Sci, Shanghai Inst Tech Phys.; SE Univ.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; IEEE MTT S.; IEEE Nanjing Joint Chapter.; IEEE Shanghai Sub Sect.; Shanghai Int Culture Assoc.; Chinese Phys Soc.; Chinese Opt Soc.; Chinese Inst Elect.

Identificador

http://ir.semi.ac.cn/handle/172111/9804

http://www.irgrid.ac.cn/handle/1471x/65903

Idioma(s)

英语

Publicador

IEEE

345 E 47TH ST, NEW YORK, NY 10017 USA

Fonte

Shao, Y (Shao, Ye); Liu, FQ (Liu, Feng-Qi); Li, L (Li, Lu); Lu, XZ (Lu, Xiu-Zhen); Liu, JQ (Liu, Jun-Qi); Wang, ZG (Wang, Zhan-Guo) .High-power operation of quantum cascade lasers endured prolonged air-oxidation .见:IEEE .Conference Digest of the 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics,345 E 47TH ST, NEW YORK, NY 10017 USA ,2006,40-40

Palavras-Chave #半导体材料
Tipo

会议论文