Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature

We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8 x 10(-4). A clear narrow band detection spectrum centered at 4.5 mu m has been observed above room temperature for a device with 200 x 200 mu m(2) square mesa.

Self-consistent analysis of AlSb/InAs high electron mobility transistor structures

The influences of channel layer width, spacer layer width, and delta-doping density on the electron density and its distribution in the AlSb/InAs high electron mobility transistors (HEMTs) have been studied based on the self-consistent calculation of the Schrodinger and Poisson equations with both the strain and nonparabolicity effects being taken into account. The results show that, having little influence on the total two dimensional electron gas (2DEG) concentration in the channel, the HEMT's channel layer width has some influence on the electron mobility, with a channel as narrow as 100-130 angstrom being more beneficial. For the AlSb/InAs HEMT with a Te delta-doped layer, the 2DEG concentration as high as 9.1 X 10(12) cm(-2) can be achieved in the channel by enhancing the delta-doping concentration without the occurrence of the parallel conduction. When utilizing a Si delta-doped InAs layer as the electron-supplying layer of the AlSb/InAs HEMT, the effect of the InAs donor layer thickness is studied on the 2DEG concentration. To obtain a higher 2DEG concentration in the channel, it is necessary to use an InAs donor layer as thin as 4 monolayer. To test the validity of our calculation, we have compared our theoretical results (2DEG concentration and its distribution in different sub-bands of the channel) with the experimental ones done by other groups and show that our theoretical calculation is consistent with the experimental results.

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

The evolution of strain and structural properties of thick epitaxial InGaN layers grown on GaN with different thicknesses are investigated. It is found that, with increase in InGaN thickness, plastic relaxation via misfit dislocation generation becomes a more important strain relaxation mechanism. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and induces an apparent red-shift of the cathodoluminescence peak of the InGaN layer. On the other hand, the plastic relaxation process results in a high defect density, which degrades the structural and optical properties of InGaN layers. A transition layer region with both strain and In composition gradients is found to exist in the 450-nm-thick InGaN layer.

Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices

With a low strained InxGa1-xAs/GaAs(x similar to 0.01) superlattice (SL) buffer layer, the crystal quality of 50 period relaxed In0.3Ga0.7As/GaAs strained SLs has been greatly improved and over 13 satellite peaks are observed from X-ray double-crystal diffraction, compared with three peaks in the sample without the buffer layer. Cross-section transmission electron microscopy reveals that the dislocations due to superlattice strain relaxation are blocked by the SLs itself and are buried into the buffer layer. The role of the SL buffer layer lies in that the number of the dislocations is reduced in two ways: (1) the island formation is avoided and (2) the initial nucleation of the threading dislocations is retarded by the high-quality growth of the SL buffer layer. When the dislocation pinning becomes weak as a result of the reduced dislocation density, the SLs can effectively move the threading dislocations to the edge of the wafer.

An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.

Room Temperature Operation of Strain-Compensated 5.5μm Quantum Cascade Lasers

Room temperature operation is an important criterion for high performance of quantum cascade lasers. A strain-compensated quantum cascade laser（λ≈5.5μm） with optimized waveguide structure lasing at room temperature is reported. Accurate control of layer thickness and strain-compensated material composition is demonstrated using X-ray diffraction. An output power of at least 45mW per facet is realized for a 20μm-wide and 2mm-long laser at room temperature.

High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers

Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

Alleviation of pre-exposure of mouse brain with low-dose C-12(6+) ion or Co-60 gamma-ray on male reproductive endocrine damages induced by subsequent high-dose irradiation

Irradiation has been widely reported to damage organisms by attacking on proteins, nucleic acid and lipids in cells. However, radiation hormesis after low-dose irradiation has become the focus of research in radiobiology in recent years. To investigate the effects of pre-exposure of mouse brain with low-dose C-12(6+) ion or Co-60 gamma (gamma)-ray on male reproductive endocrine capacity induced by subsequent high-dose irradiation, the brains of the B6C3F(1) hybrid strain male mice were irradiated with 0.05 Gy of C-12(6+) ion or Co-60 gamma-ray as the pre-exposure dose, and were then irradiated with 2 Gy as challenging irradiation dose at 4 h after pre-exposure. Serum pituitary gonadotropin hormones, follicle-stimulating hormone (FSH) and luteinizing hormone (LH), testosterone, testis weight, sperm count and shape were measured on the 35th day after irradiation. The results showed that there was a significant reduction in the levels of serum FSH, LH, testosterone, testis weight and sperm count, and a significant increase in sperm abnormalities by irradiation of the mouse brain with 2 Gy of C-12(6+) ion or Co-60 gamma-ray. Moreover, the effects were more obvious in the group irradiated by C-12(6+) ion than in that irradiated by Co-60 gamma-ray. Pre-exposure with low-dose C-12(6+) ion or Co-60 gamma-ray significantly alleviated the harmful effects induced by a subsequent high-dose irradiation.

Raman spectroscopy of apatite irradiated with swift heavy ions with and without simultaneous exertion of high pressure

Durango apatite was irradiated with energetic U ions of 2.64 GeV and Kr ions of 2.1 GeV, with and without simultaneous exposure to a pressure of 10.5 GPa. Analysis by confocal Raman spectroscopy gives evidence of vibrational changes being marginal for fluences below 5x10(11) ions/cm(2) but becoming dominant when increasing the fluence to 8x10(12) ions/cm(2). Samples irradiated with U ions experience severe strain resulting in crystal cracking and finally breakage at high fluences. These radiation effects are directly linked to the formation of amorphous tracks and the fraction of amorphized material increasing with fluence. Raman spectroscopy of pressurized irradiated samples shows small shifts of the band positions with decreasing pressure but without a significant change of the Gruneisen parameter. Compared to irradiations at ambient conditions, the Raman spectra of apatite irradiated at 10.5 GPa exhibit fewer modifications, suggesting a higher radiation stability of the lattice by the pressure applied.

Adaptive hormetic response of pre-exposure of mouse brain with low-dose C-12(6+) ion or Co-60 gamma-ray on growth hormone (GH) and body weight induced by subsequent high-dose irradiation

The brain of the Kun-Ming strain mice were irradiated with 0.05 Gy of C-12(6+) ion or Co-60 gamma-ray as the pre-exposure dose, and were then irradiated with 2 Gy of 12C6+ ion or Co-60 gamma-ray as challenging irradiation dose at 4 h after per-exposure. Body weight and serum growth hormone (GH) concentration were measured at 35th day after irradiation. The results showed that irradiation of mouse brain with 2 Gy of C-12(6+) ion or Co-60 gamma-ray significantly diminished mouse body weight and level of serum GH. The relative biological effectiveness values of a 2 Gy dose of C-12(6+) ion calculated with respect to Co-60 gamma-ray were 1.47 and 1.34 for body weight and serum GH concentration, respectively. Pre-exposure with a low-dose (0.05 Gy) of C-12(6+) ion or Co-60 gamma-ray significantly alleviated reductions of mouse body weight and level of serum GH induced by a subsequent high-dose (2 Gy) irradiation. The data suggested that low-dose ionizing irradiation can induce adaptive hormetic responses to the harmful effects of pituitary by subsequent high-dose exposure.

Inactive and mutagenic effects induced by carbon beams of different LET values in a red yeast strain

To evaluate biological action of microorganism exposed to charged particles during the long distance space exploration. Induction of inactivation and mutation in a red yeast strain Rhodotorula glutinis AY 91015 by carbon beams of different LET values (14.9-120 0 keV mu m(-1)) was investigated It was found that survival curves were exponential, and mutation curves were linear for all LET values The dependence of inactivation cross section on LET approached saturation near 120 0 keV mu m(-1) The imitation cross section saturated when LET was higher than 582 keV mu m(-1) Meanwhile, the highest RBEI for inactivation located at 120 0 key mu m(-1) and the highest RBEm for mutation was at 58.2 key mu m(-1) The experiments imply that the most efficient mutagenic part of the depth dose profile of carbon ion is at the plateau region with intermediate LET value in which energy deposited is high enough to Induce mutagenic lesions but too low to induce over kill effect in the yeast cells (C) 2010 Elsevier B V All rights reserved

Structural evolution of tensile deformed high-density polyethylene at elevated temperatures: Scanning synchrotron small- and wide-angle X-ray scattering studies

The structural evolution of an ice-quenched high-density polyethylene (HDPE) subjected to uniaxial tensile deformation at elevated temperatures was examined as a function of the imposed strains by means of combined synchrotron small-angle X-ray scattering (SAXS) and wide-angle X-ray scattering (WAXS) techniques. The data show that when stretching an isotropic sample with the spherulitic structure, intralamellar slipping of crystalline blocks was activated at small deformations, followed by a stress-induced fragmentation and recrystallization process yielding lamellar crystallites with their normal parallel to the stretching direction. Stretching of an isothermally crystallized HDPE sample at 120 degrees C exhibited changes of the SAXS diagram with strain similar to that observed for quenched HDPE elongated at room temperature, implying that the thermal stability of the crystal blocks composing the lamellae is only dependent on the crystallization temperature.

Structural evolution of tensile-deformed high-density polyethylene during annealing: Scanning synchrotron small-angle X-ray scattering study

The structural evolution of high-density polyethylene subjected to uniaxial tensile deformation was investigated as a function of strain and after annealing at different temperatures using a scanning synchrotron small-angle X-ray scattering (SAXS) technique. The results confirm that in the course of tensile deformation intralamellar block slips were activated at small deformations followed by a stress-induced fragmentation and recrystallization process yielding thinner lamellae with their normal parallel to the stretching direction. The original sheared lamellae underwent severe internal deformation so that they were even less stable than the newly developed thinner lamellae. Accordingly, annealing results in a melting of the original crystallites even at moderate strains where the stress-induced fragmentation and recrystallization just sets in and generates a distinctly different form of lamellar stacks aligned along the drawing direction. It was found that the lamellae newly formed during stretching at moderate strains remain stable at lower temperature. Only at a very high annealing temperature of 120 degrees C can they be melted, leading to an isotropic distribution of the lamellar structure.

Mechanical and thermal properties of high-density polyethylene toughened with glass beads

Glass beads were used to improve the mechanical and thermal properties of high-density polyethylene (HDPE). HDPE/glass-bead blends were prepared in a Brabender-like apparatus, and this was followed by press molding. Static tensile measurements showed that the modulus of the HDPE/glass-bead blends increased considerably with increasing glass-bead content, whereas the yield stress remained roughly unchanged at first and then decreased slowly with increasing glass-bead content. Izod impact tests at room temperature revealed that the impact strength changed very slowly with increasing glass-bead content up to a critical value; thereafter, it increased sharply with increasing glass-bead content. That is, the lzod impact strength of the blends underwent a sharp transition with increasing glass-bead content. It was calculated that the critical interparticle distance for the HDPE/glass-bead blends at room temperature (25degreesC) was 2.5 mum. Scanning electron microscopy observations indicated that the high impact strength of the HDPE/glass-bead blends resulted from the deformation of the HDPE matrix. Dynamic mechanical analyses and thermogravimetric measurements implied that the heat resistance and heat stability of the blends tended to increase considerably with increasing glass-bead content.

Synthesis, structure, and ring-opening polymerization of macrocyclic aromatic esters: A new route to high-performance polyarylates

A series of macrocyclic arylate dimers have been efficiently synthesized by an interfacial polycondensation of o-phthaloyl dichloride with bisphenols. A combination of GPC, FAB MS, and H-1 and C-13 NMR unambiguously confirmed the cyclic nature. Although single-crystal X-ray analysis of one such macrocycle reveals no severe strain on the cyclic structure, these macrocycles can undergo facile melt polymerization to give high molecular weight polyarylates.