吡唑啉衍生物有机电致发光器件中激基复合物的发射

以两种吡唑啉衍生物为空穴传输材料(HTM)和BBOT为电子传输材料组成双层器件，获得了相对于组成材料的荧光光谱红移和宽化的电致发光．双层器件和HTM：BBOT等摩尔混蒸薄膜的光致发光及电致发光测量表明，该谱带来自HTM／BBOT界面激基复合物的发射，根据器件的能级图，激基复合物的类型为BBOT的激发态BBOT^

细胞色素b6f蛋白复合体中叶绿素 a的性质和功能研究

细胞色素b6f蛋白复合体（Cytochrome b6f complex, Cyt b6f）是光合膜上参与光合作用原初反应过程的主要膜蛋白超分子复合体之一。莱茵衣藻和嗜热蓝细菌的Cyt b6f三维晶体结构均显示，每Cyt b6f单体分子含有1分子Chlorophyll a (Chl a )，充分肯定了Chl a 是Cyt b6f天然成分的观点(Kurisu et al，2003;Stroebel et al，2003)。研究表明不同来源的Cyt b6f中Chla单线激发态寿命(或荧光寿命)并不一样，多数的研究结果认为Cyt b6f中Chla单线激发态寿命只有200ps左右，但是也有Cyt b6f中Chla单线激发态寿命为～600ps的报道;而甲醇中游离Chl a 的单线激发态寿命为4ns左右。针对Cyt b6f中Chla单线激发态寿命快速淬灭的现象，Dashdorj 等(2005)根据晶体结构推测Cyt b6f中Chla单线激发态和邻近的Cyt b6亚基上Tyr105残基发生电子交换传递，从而快速淬灭Chla单线激发态，减少了三线态Chl a和单线态氧的产生，并且认为这是Cyt b6f保护自身不受单线态氧破坏的一种机制，但是这一推测缺乏有力的证据。另外，Cyt b6f中Chla的功能仍然未知。本文以菠菜Cyt b6f为对象，结合多种实验手段，测定了菠菜Cyt b6f中Chl a单线激发态寿命，并对复合体中Chl a 单线激发态淬灭的机理进行了深入研究。此外，我们还对复合体中Chl a 可能的功能进行了初步地探讨。获得了如下的结果： 1．针对不同来源的Cyt b6f中Chla单线激发态寿命（或荧光寿命）测定结果不同的报道，仔细分析了其中的原因，发现除了样品来源的差异外，使用不同的去垢剂可能是一个不可忽视的因素。在实验中，不同的研究者分别采用了十二烷基麦芽糖苷（n-Dodecyl β-D-maltoside，DDM，）和八烷基葡萄糖苷（n-Octyl β-D-glucopyranoside，β－OG)作为溶解样品的去垢剂。因此，本文借助稳态吸收和稳态荧光光谱、瞬态光散射技术，CD光谱和亚皮秒时间分辨吸收光谱等技术，分别研究了这两种去垢剂对Cyt b6f结构和功能的不同影响。结果表明，DDM去垢剂能使Cyt b6f处于较好的分散体系中，其中血红素和Chl a分子处于特定的蛋白环境中，不会导致Cyt b6f变性;而β－OG去垢剂会使Cyt b6f产生聚合现象，其中的血红素和Chl a与蛋白环境的相互作用减弱，和DDM相比其电子传递活性显著降低，Chl a单线激发态寿命延长，Chl a更容易被光破坏。通过这一工作，我们优化和确定了Cyt b6f的溶解条件，为下面的研究工作打下了良好的基础。 2．利用Tyr的特异性修饰剂p-Nitrobenzenesulfonyl Fluoride（NBSF）对Cyt b6f样品进行特性修饰，经原子吸收谱、荧光谱、CD谱、质谱等方法对修饰后的样品进行鉴定，并结合时间分辨飞秒吸收光谱技术，测得修饰后的样品在660nm激发下Chl a 单线激发态寿命延长，从而在实验上提供了Tyr与淬灭Chla单线激发态有关的证据。但是对Cyt b6f 中Chl a瞬态吸收图谱仔细研究表明，菠菜Cyt b6f 中Chl a单线激发态快速淬灭过程中并没有发现Tyr与Chl a 之间发生电子传递时所形成的Chla•¯。以上结果表明，Cyt b6f 中Chl a单线激发态快速的淬灭确实和邻近的Tyr105有关，但是与Dashdorj 等提出的Chla单线激发态和Tyr105残基发生了电子交换传递从而淬灭Chla单线激发态这一想法不符，关于这一问题值得进一步深入研究。 3．红光和绿光对Cyt b6f 照射，Cyt f可以被还原，并且红光比绿光更容易使Cyt f 还原，暗示Cyt f 的还原与Chl a 的关系密切，有可能是Chl a 被激发后，其被激发的电子传给Cyt f。对这一现象的进一步研究表明，Cyt b6f在光照条件下，Cyt f 的还原与体系内C10－PQ库的氧化还原状况相关，氧化型的C10－PQ可能介导电子从Chla传向Cyt f。由于在体内质体醌库的氧化还原状态往往决定Cyt b6f 的氧化还原状态，而通过对Cyt b6f不同氧化和还原状态的吸收谱和荧光谱的研究表明，氧化态和还原态的Cyt b6f 中，Chl a 与蛋白的结合状态是有差异的。这些差异可能暗示着Chl a 分子在行使其功能时与复合体的氧化还原状态是有关系的。通过以上的结果，对Cyt b6f中Chl a 可能的功能进行了假设。 4．此外，我们还发现Cyt b6f具有明显的过氧化物酶活性。在0.1 mmol/L乙酸钠缓冲液，pH3.6，25℃，[H2O2] <40mmol/L的条件下，其催化反应的速度常数为kobs＝26±1.2M•s-1;对H2O2的Km 值为50mmol/L，对guaiacol的Km 值为2mmol/L;反应的最适pH为3.6，最适离子强度为0.1，最适温度为35℃。推测Cyt b6f的这种过氧化物酶活性可能是在胁迫环境下使Cyt b6f中的血红素和Chl a 分子免受H2O2的破坏。

Using epilithic diatom communities to assess ecological condition of Xiangxi River system

Assessment method for ecological condition of Xiangxi River system was studied by using 13 candidate metrics of epilithic diatom which can reflect conditions in pH, salinity, nitrogen uptake metabolism, oxygen requirements, saprobity, trophic state, morphological character and pollution tolerant capability etc. By one-way ANOVA, the metrics of relative abundance of acidobiontic algae (ACID), freshwater algae (FRESH), high oxygen requirement (HIGH-O), eutraphentic state (EUTRA) and mobile taxa ( MOBILE) were suitable for distinguishing sites in different conditions. Then, the river diatom index (RDI) composed of these five metrics was used to evaluate ecological condition of the river. The results showed that the healthiest sites were in the Guanmenshan Natural Reserve ( with the mean RDI of 79.73). The sites located in tributary of Jiuchong River also owned excellent state (mean RDI of 78.25). Mean RDI of another tributary - Gufu River and the main river were 70.85 and 68.45 respectively, and the unhealthiest tributary was Gaolan River (with mean RDI of 65.64). The mean RDI for all the 51 sites was 71.40. The competence of RDI was discussed with comparison of evaluation results of DAIpo and TDI, it can be concluded that multimetrics is more competent in assessment task.

Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation

The gain recoveries in quantum dot semiconductor optical amplifiers (QD SOAs) are numerically studied by rate equation simulation. Similar to the optical pump-probe experiment, the injection of double 150 fs optical pulses is used to simulate the gain recovery of a weak continuous signal under different injection levels, inhomogeneous broadenings, detuning wavelengths, and pulse signal energies for the QD SOAs. The obtained gain recoveries are then fitted by a response function with multiple exponential terms to determine the response times. The gain recovery can be described by three exponential terms with the time constants, which can be explained as carrier relaxation from the excited state to the ground state, carrier captured by the excited state from the wetting layer, and the supply of the wetting layer carriers. The fitted lifetimes decrease with the increase of the injection currents under gain unsaturation, slightly decrease with the decrease of inhomogeneous broadening of QDs, and increase with the increase of detuning wavelength between continuous signal and pulse signal and the increase of the pulse energy.

Electronic energy levels in an asymmetric quantum-dots-in-a-well structure for infrared photodetectors

Theoretical calculation of electronic energy levels of an asymmetric InAs/InGaAS/GaAS quantum-dots-in-a-well (DWELL) structure for infrared photodetectors is performed in the framework of effective-mass envelope-function theory. Our calculated results show that the electronic energy levels in quantum dots (QDs) increase when the asymmetry increases and the ground state energy increases faster than the excited state energies. Furthermore, the results also show that the electronic energy levels in QDs decrease as the size of QDs and the width of quantum well (QW) in the asymmetric DWELL structure increase. Additionally, the effects of asymmetry, the size of QDs and the width of QW on the response peak of asymmetry DWELL photodetectors are also discussed.

Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector

Strongly vertically coupled InAs/GaAs quantum dots (QDs) with modulation doping are investigated, and polarization dependence of two-color absorptions was observed. Analysis of photoluminescence (PL) and absorption spectra shows that s-polarized absorptions at. 10.0 and 13.4 mu m, stem from the first excited state E-1 and the second excited state E-2 in the QDs to the bound state E-InGaAs in the InGaAs spacer, respectively, whereas p-polarized absorptions at 10.0 and 8.2 mu m stem from the first excited state E-1 and the ground E-g in the QDs to the bound state E-InGaAs in the InGaAs spacer, respectively. These measurements illustrate that transitions from excited states are more sensitive to normal incidence, which are very important in designing QD infrared detector. (C) 2007 Elsevier B.V. All rights reserved.

Spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells

The electronic states of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells are investigated theoretically in the framework of effective-mass envelope function theory, including the effect of Rashba spin-orbit coupling. The splits of electron energy levels are calculated. The results show that (1) the split energy of the excited state is larger than that of the ground state; (2) the split energy peak appears as the GaAs well width increases from zero; and (3) the maximum split energy reaches about 1.6 meV. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices. (c) 2008 American Institute of Physics.

Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots

The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are calculated using the ten-band k . p model and the valence force field method. The optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. With the variation of QD sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. It facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. For QD with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the Fermi-Dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. For larger QD, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller QD as carrier concentration increases. Larger QD can reach its saturation gain faster, but this saturation gain is smaller than that of smaller QD. So the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate QD size according to the specific application requirement. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3143025]

Decay lifetime and evolution of semiconductor quantum dots in photonic crystals

Spontaneous emission from GaAs/AlGaAs quantum dots (QDs) embedded in photonic crystals with a narrow photonic band gap is studied theoretically. The results show that the decay lifetime is very sensitive to the sizes of QDs, and both inhibited and accelerated emission can occur, which had been indicated in a previous experiment. The Weisskopf-Wigner approximation, good for atoms and molecules, may be incorrect for QDs. A damped Rabi oscillation of the excited state with the transition frequency outside the photonic band gap may appear, which is impossible for atoms and molecules. (c) 2008 Elsevier Ltd. All rights reserved.

Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells

The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. The Rashba effect near the interface between GaAs and GaAlAs is assumed to be a linear relation with the distance from the quantum well side. We find that the splitting energy of the excited state is larger and less dependent on the position of the impurity than that of the ground state. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices.

Photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots under pressure

The photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots was investigated at 15 K under hydrostatic pressure up to 9 GPa. Photoemission from both the ground and the first excited states in large InAs dots was observed. The pressure coefficients of the two emissions were 69 and 72 meV/GPa, respectively. A nonlinear elasticity theory was used to interpret the significantly small pressure coefficients of the large dots. The sequential quenching of the ground and the excited state emissions with increasing pressure suggests that the excited state emissions originate from the optical transitions between the first excited electron states and the first excited hole states. (C) 2004 American Institute of Physics.

Photoluminescence of low-dimensional semiconductor structures under pressure

Photoluminescence of some low-dimensional semiconductor structures has been investigated under pressure. The measured pressure coefficients of In0.55Al0.45 As/Al0.5Ga0.5As quantum dots with average diameter of 26, 52 and 62 nm are 82, 94 and 98 meV/GPa, respectively. It indicates that these quantum dots are type-I dots. On the other hand, the measured pressure coefficient for quantum dots with 7 nm in size is -17meV/GPa, indicating the type-II character. The measured pressure coefficient for Mn emission in ZnS:Mn nanoparticles is -34.6meV/GPa, in agreement with the predication of the crystal field theory. However, the DA emission is nearly independent on pressure, indicating that this emission is related to the surface defects in ZnS host. The measured pressure coefficient of Cu emission in ZnS: Cu nanoparticles is 63.2 meV/GPa. It implies that the acceptor level introduced by Cu ions has some character of shallow level. The measured pressure coefficient of Eu emission in ZnS:Eu nanoparticles is 24.1 mev/GPa, in contrast to the predication of the crystal field theory. It may be due to the strong interaction between the excited state of Eu ions and the conduction band of ZnS host.

Photoluminescence of large-sized InAs/GaAs quantum dots under hydrostatic pressure

The photoluminescence of self-assembled InAs/GaAs quantum dots, which are 7.3nm in height and 78nm in base size, was investigated at 15K under hydrostatic pressures up to 9GPa. The emissions from both the ground and the first excited states in large InAs dots were observed. The pressure coefficients of the two emissions are 69 and 72 meV/GPa respectively, which are lower than those of small InAs/GaAs dots. The analysis based on a nonlinear elasticity theory reveals that the small pressure coefficients mainly result from the changes of the misfit strain and the elastic constants with pressure. The pressure experiments suggest that the excited state emissions originate from the optical transitions between the first excited electron states and the first excited hole states.

Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x/GaN multiple quantum wells

A self-consistent calculation of the subband energy levels of n-doped quantum wells is studied. A comparison is made between theoretical results and experimental data. In order to account for the deviations between them, the ground-state electron-electron exchange interactions, the ground-state direct Coulomb interactions, the depolarization effect, and the exciton-like effect are considered in the simulations. The agreement between theory and experiment is greatly improved when all these aspects are taken into account. The ground-to-excited-state energy difference increases by 8 meV from its self-consistent value if one considers the depolarization effect and the exciton-like effect only. It appears that the electron-electron exchange interactions account for most of the observed residual blueshift for the infrared intersubband absorbance in AlxGa1-xN/GaN multiple quantum wells. It seems that electrons on the surface of the k-space Fermi gas make the main contribution to the electron-electron exchange interactions, while for electrons further inside the Fermi gas it is difficult to exchange their positions. (C) 2004 Elsevier B.V. All rights reserved.

Calculation of energy levels in InGaAs/GaAs quantum dot array

The subbands of the ground state E-c1, the first excited state E-c2 and heavy hole state E-HH1 are calculated by solving the eigenvalues of effective-mass Hamiltonian H-0 which is derived from eight-band k . p theory and the calculations are performed at k(x) = k, = k = 0 for the three-dimensional array of InGaAs/GaAs quantum dots (QDs). With indium content in InGaAs QDs gradually increasing from 30% to 100%,the intersubband transition wavelength of E-c2 to E-c1, blue-shifts from 18.50 to 11.87 mu m,while the transition wavelength of E-c1, to E-HH1, red-shifts from 1. 04 to 1. 73 mu m. With the sizes of Ir-0.5 Ga-0.5 As and InAs QDs increasing from 1.0 to 5.0 nm, the intersubband transition from E-c1, to E-C2 transforms from bound-state-to-continuum-state to bound-state-to-bound-state, and the corresponding intersubband transition wavelengths red-shift from 8.12 pm (5.90 pm) to 53.47 mu m (31.87 pm), respectively, and the transition wavelengths of E-C1 to E-HH1 red-shift from 1. 13 mu m (1.60 mu m) to 1.27 mu m (2.01 mu m), respectively.