Comparative study on the effect of dietary lipid level on growth and feed utilization for gibel carp (Carassius auratus gibelio) and Chinese longsnout catfish (Leiocassis longirostris Gunther)

An 8-week growth trial investigated the effect of dietary lipid level on growth performance of a carnivorous fish, Chinese longsnout catfish (Leiocassis longirostris Gunther) and an omnivorous fish, gibel carp (Carassius auratus gibelio). For each species, seven isonitrogenous semi-purified diets (455 g kg(-1) crude protein for Chinese longsnout catfish and 385 g kg(-1) crude protein for gibel carp) were formulated to contain 30, 60, 90, 120, 150, 180 or 210 g kg(-1) lipid. For Chinese longsnout catfish, feed intake (FI) decreased with increasing dietary lipid and there was no significant difference in feed intake from 90 to 210 g kg(-1) lipid. Specific growth rate (SGR) increased with dietary lipid level (P < 0.05) and the 150 and 180 g kg(-1) groups were the best. Feed conversion efficiency (FCE), protein retention efficiency (PRE) and energy retention efficiency (ERE) were higher at 180 g kg(-1) lipid. For gibel carp, FI decreased with increased dietary lipid and 180 and 210 g kg(-1) lipid groups showed lower values. SGR increased with dietary lipid level and the 150 and 180 g kg(-1) were the best. FCE was higher at 180 g kg(-1) lipid level. PRE increased with dietary lipid level and there was no significant difference in groups from 120 to 210 g kg(-1) dietary lipid. ERE increased with increasing dietary lipid level, and groups fed 120, 150 and 180 g kg(-1) lipid showed the highest values. In Chinese longsnout catfish, increase in dietary lipid level, resulted in increased carcass dry matter, crude protein, crude lipid and gross energy. In gibel carp, dry matter, crude protein, and crude lipid increased with dietary lipid level. Based on regression between SGR and dietary lipid, dietary lipid requirements for Chinese longsnout catfish and gibel carp were 142.6 and 140.5 g kg(-1), respectively.

Genetic heterogeneity and ploidy level analysis among different gynogenetic clones of the polyploid gibel carp

Background: Some triploid and tetraploid clones have been identified in the gynogenetic gibel carp, Carassius auratus gibelio Bloch, by karyotypic and cytologic analyses over many years. Further, 5-20% males and karyotypic diversity have been found among their natural and artificial populations. However, the DNA contents and the relation to their ploidy level and chromosome numbers have not been ascertained, and whether normal meiosis occurs in spermatogenesis needs to be determined in the different clones. Methods: The sampled blood cells or sperms were mixed with blood cells from chicken or individual gibel carp and fixed in 70% pre-cooled ethanol overnight at 4degreesC. The mixed cell pellets were washed 2-3 times in 1x phosphate buffered saline and then resuspended in the solution containing 0.5% pepsin and 0.1 M HCl. DNA was stained with propidium iodide solution (40 mug/mL) containing 4 kU/ml RNase. The measurements of DNA contents were performed with Phoenix Flow Systems. Results: Triploid clones A, E, F, and P had almost equal DNA content, but triploid clone D had greater DNA content than did the other four triploid clones. DNA content of clone M (7.01 +/- 0.15 pg/nucleus) was almost equal to the DNA content of clone D (5-38 +/- 0.06 pg/nucleus) plus the DNA content of common carp sperm (1.64 +/- 0.02 pg/nucleus). The DNA contents of sperms from clones A, P, and D were half of their blood cells, suggesting that normal meiosis occurs in spermatogenesis. Conclusions: Flow cytometry is a powerful method to analyze genetic heterogeneity and ploidy level among different gynogenetic clones of polyploid gibel carp. Through this study, four questions have been answered. (a) The DNA content correlation among the five triploid clones and one multiple tetraploid clone was revealed in the gibel carp, and the contents increased with not only the ploidy level but also the chromosome number. (b) Mean DNA content was 0.052 pg in six extra chromosomes of clone D, which was higher than that of each chromosome in clones A, E, F, and P (about 0.032 pg/ chromosome). This means that the six extra chromosomes are larger chromosomes. (c) Normal meiosis occurred during spermatogenesis of the gibel carp, because DNA contents of the sperms from clones A, P, and D were almost half of that in their blood cells. (d) Multiple tetraploid clone M (7.01 +/- 0.15 pg/nucleus) contained the complete genome of clone D (5.38 +/- 0.06 pg/nucleus) and the genome of common carp sperm (1.64 +/- 0.02 pg/nucleus). Cytometry Part A 56A:46-52, 2003. (C) 2003 Wiley-Liss, Inc.

Determination of trace level microcystins in water using solid-phase extraction and high performance liquid chromatography

This paper presents a method for trace level analysis of microcystins in water using solid-phase extraction and high performance liquid chromatography. The optimized condition enabled the determination of common microcystins at levels as low as 0.02 similar to 0.05 mug/L, and the liner range is from 0.1 mug/L to 50 mug/L. The method has been applied to the analysis of field sample from Dianchi lake.

Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning

We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.

Wafer-Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers

A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efficient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 60nm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.

Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering

Field emissions (FE) from La-doped zinc oxide (ZnO) films are both experimentally and theoretically investigated. Owing to the La-doped effect, the FE characteristic of ZnO films is remarkably enhanced compared with an undoped sample, and a startling low turn-on electric field of about 0.4 V/mu m (about 2.5 V/mu m for the undoped ZnO films) is obtained at an emission current density of 1 mu A/cm(2) and the stable current density reaches 1 mA/cm(2) at an applied field of about 2.1 V/mu m. A self-consistent theoretical analysis shows that the novel FE enhancement of the La-doped sample may be originated from its smaller work function. Due to the effect of doping with La, the Fermi energy level lifts, electrons which tunnelling from surface barrier are consumedly enhancing, and then leads to a huge change of field emission current. Interestingly, it suggests a new effective method to improve the FE properties of film materials.

Annihilation of deep level defects in InP through high temperature annealing

Deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) have been used to investigate defects in semi-conducting and semi-insulating (SI) InP after high temperature annealing, respectively. The results indicate that the annealing in iron phosphide ambient has an obvious suppression effect of deep defects, when compared with the annealing in phosphorus ambient. A defect annihilation phenomenon has also been observed in Fe-doped SI-InP materials after annealing. Mechanism of defect formation and annihilation related to in-diffusion of iron and phosphorus is discussed. Nature of the thermally induced defects has been discussed based on the results. (c) 2007 Elsevier Ltd. All rights reserved.

Optical response of high-level bandgap in one-dimensional photonic crystal applying in-plane integration

A new broadband filter, based on the high level bandgap in 1-D photonic crystals (PCs) of the form Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si is designed by the plane wave expansion method (PWEM) and the transfer matrix method (TMM) and fabricated by lithography. The optical response of this filter to normal-incident and oblique-incident light proves that utilizing the high-level bandgaps of PCs is an efficient method to lower the difficulties of fabricating PCs, increase the etching depth of semiconductor materials, and reduce the coupling loss at the interface between optical fibers and the PC device. (c) 2007 Society of Photo-Optical Instrumentation Engineers.

Deep level defects in high temperature annealed InP

Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level transient spectroscopy (DLTS). There is obvious difference in the deep defects between as-grown InP, InP annealed in phosphorus ambient and iron phosphide ambient, as far as their quantity and concentration are concerned. Only two defects at 0.24 and 0.64 eV can be detected in InP annealed in iron phosphide ambient, while defects at 0.24, 0.42, 0.54 and 0.64 eV have been detected in InP annealed in phosphorus ambient, in contrast to two defects at 0.49 and 0.64 eV or one defect at 0.13 eV in as-grown InP. A defect suppression phenomenon related to iron diffusion process has been observed. The formation mechanism and the nature of the defects have been discussed.

ac gate-induced Fano resonance and peak splitting of conductance in a quantum dot

We have investigated the conductance of a quantum dot system suffering an anti-symmetric ac gate voltage which induces the transition between dot levels in the linear regime at zero temperature in the rotating wave approximation. Interesting Fano resonances appear on one side of the displaced resonant tunnelling peaks for the nonresonant case or the peak splitting for the resonant case. The line shape of conductance (vs Fermi energy) near each level of the quantum dot can be decomposed into two profiles: a Breit-Wigner peak and a Fano profile, or a Breit-Wigner peak and a dip in both cases.

Method for generating maximally entangled states of multiple three-level atoms in cavity QED

We propose a scheme to generate maximally entangled states (MESs) of multiple three-level atoms in microwave cavity QED based on the resonant atom-cavity interaction. In the scheme, multiple three-level atoms initially in their ground states are sequently sent through two suitably prepared cavities. After a process of appropriate atom-cavity interaction, a subsequent measurement on the second cavity field projects the atoms onto the MESs. The practical feasibility of this method is also discussed.

Structural, magnetic properties and photoemission study of Ni-doped ZnO

Nickel-doped ZnO (Zn1-xNixO) have been produced using rf magnetron sputtering. X-ray diffraction measurements revealed that nickel atoms were successfully incorporated into ZnO host matrix without forming any detectable secondary phase. Ni 2p core-level photoemission spectroscopy confirmed this result and suggested Ni hits it chemical valence of 2 +. According to the . We studied the electronic magnetization measurements, no ferromagnetic but paramagnetic behavior was found for Zn0.86Ni0.14O. We studied the electronic structure of Zn0.86Ni0.14O by valence-band photoemission spectroscopy. The spectra demonstrate a structure at similar to 2 eV below the Fermi energy E-F, which is of Ni 3d origin. No emission was found at E-A, suggesting the insulating nature of the film. (c) 2005 Elsevier Ltd. All rights reserved.

Level-oscillation-induced pump effect in a quantum dot with asymmetric constrictions

We have investigated the pump effect induced by the level oscillation in a quantum dot with asymmetric constrictions. The curve of pumped current versus the frequency of level oscillation undulates at zero temperature. The oscillation of the pumped current can be smeared by increasing the temperature and the coupling strength between the quantum dot and the leads. Either the temperature increase or the coupling strength enhancement can lead to a positive or negative effect on the pumped current, depending on the parameters of the quantum dot system. A larger level-oscillation magnitude results in a larger pumped current, especially in the low-frequency case. An analytical expression of the pumped current is obtained in the regime far from adiabatic. A convenient physical picture based on our analytic result is proposed, with which we can explain all the features of the pumped current curves.

Generation of a supersinglet of three three-level atoms in cavity QED

We propose a scheme to generate a supersinglet of three three-level atoms in microwave cavity quantum electrodynamics based on the resonant atom-cavity interaction. In the scheme, three three-level atoms in suitable initial states are sequentially sent through three cavities originally prepared in their vacuum states. After an appropriate atom-cavity interaction process, in the subsequent measurement on the third cavity field the atoms are projected onto the desired supersinglet. The practical feasibility of this method is discussed.

High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array

State-filling effects of the exciton in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array are observed by quantum dot array photolumineseence at a sample temperature of 77 K. The exciton emission at low excitation density is dominated by the radiative recombination of the states in the s shell and at high excitation density the emission mainly results from the radiative recombination of the exciton state in the p shell. The spectral interval between the states in the s and p shells is about 30-40 mcV. The time resolved photoluminescence shows that the decay time of exciton states in the p shell is longer than that of exciton states in the s shell, and the emission intensity of the exciton state in the p shell is superlinearly dependent on excitation density. Furthermore, electron-hole liquid in the quantum dot array is observed at 77 K, which is a much higher temperature than that in bulk. The emission peak of the. recombination, of electron-hole liquid has an about 200 meV redshift from the exciton fluorescence. Two excitation density-dependent emission peaks at 1.56 and 1.59 eV are observed, respectively, which result from quantum confinement effects in QDs. The emission intensity of electron-hole liquid is directly proportional to the cubic of excitation densities and its decay time decreases significantly at the high excitation density.