磁控溅射不同厚度银膜的微结构及其光学常数

Ag films with different thickness from 8.2nm to 107.2nm were prepared by DC sputtering deposition and analyzed by X-ray diffraction with the help of optimization program on computer. Microstructrue analysis shows that the films are made of fcc-Ag particles. With the increase of thickness, the mean size of Ag particles increases and the interplaner spacing decreases gradually. The optical constants computed by computer program shows that n value decreases quickly with the increasing thickness below 17.5nm and k value changes in reverse, and then go steadily when the thickness is larger than 17.5nm at the wavelength of 550mn.

离子辅助沉积中离子束流密度的作用

测量了End-Hall离子源在不同条件下的离子束流密度，在不同离子束流密度下进行了心离子辅助沉积ZrO2薄膜的实验，研究了离子束流密度对薄膜折射率、晶相的影响．根据动量传递模型分析了离子束流密度对薄膜折射率的作用；根据热尖峰理论证明了一定条件下离子束流密度不会影响薄膜晶体结构。

德鲁德分布非均匀膜的光学特性模拟分析

从德鲁德理论出发，对多元共蒸法镀制的非均匀膜的折射率分布与沉积速率的关系进行了探讨；然后利用计算机辅助模拟，对德鲁德分布非均匀光学薄膜，从单周期和多周期、正变和负变、完整周期和存在半周期几个方面对其光学特性进行了系统分析．研究发现：其透射率的极小值和周期数的关系遵从周期数的三次多项式衰减规律，不同规律的德鲁德分布非均匀膜可用来设计不同功能的滤光片．

Y2O3 stabilized ZrO2 thin films deposited by electron-beam evaporation: Optical properties, structure and residual stresses

This paper describes the preparation and the characterization Of Y2O3 stabilized ZrO2 thin films produced by electric-beam evaporation method. The optical properties, microstructure, surface morphology and the residual stress of the deposited films were investigated by optical spectroscopy, X-ray diffraction (XRD), scanning probe microscope and optical interferometer. It is shown that the optical transmission spectra of all the YSZ thin films are similar with those of ZrO2 thin film, possessing high transparency in the visible and near-infrared regions. The refractive index of the samples decreases with increasing of Y2O3 content. The crystalline structure of pure ZrO2 films is a mixture of tetragonal phase and monoclinic phase, however, Y2O3 stabilized ZrO2 thin films only exhibit the cubic phase independently of how much the added Y2O3 content is. The surface morphology spectrum indicates that all thin films present a crystalline columnar texture with columnar grains perpendicular to the substrate and with a predominantly open microporosity. The residual stress of films transforms tensile from compressive with the increasing Of Y2O3 molar content, which corresponds to the evolutions of the structure and packing densities. (C) 2008 Elsevier Ltd. All rights reserved.

ADSORBABILITY AND SEDIMENTATION EFFECT OF SUBMERGED MACROPHYTES ON SUSPENDED SOLIDS

To select better plant species for adsorption and deposition of suspended solids in water, effectively, eight species of submerged macrophytes, which are popular in the middle or downstream area of Yangtze River, were studied. The effects of their adsorbability and sedimentation on suspended solids were monitored in the microcosm systems with natural lake's sediment and water. Within one week's regular disturbance, according to their adsorbability of the macrophytes on suspended solids, the macrophytes were divided into two groups. Elodea nuttallii, Potamogeton crispus, Hydrilla verticillata, Myriophyllum spicatum, Potamogeton malaianus and Najas graminea were the macrophytes with stronger adsorbability. Vallisneria natans and Ceratoplyllum demersum were the macrophytes with weaker adsorbability. The average adsorbabilities of the two groups were 28.0 and 14.5 mg g(-1) FW-1, respectively. According to the sedimentation rate, the macrophytes were divided into three groups. P. crispus and H. verticillata were in the highest group. V.natans was in higher group. E nuttallii, M. spicatum, N. graminea, C demersum and P. malaianus were in the lowest group. The average sedimentation rates of the three groups were 3.42, 2.11 and 0.69 mg l(-1) d(-1). respectively. Therefore, P. crispus and H. verticillata were excellent species. C demersum was a poor species to improve transparency of water body.

Extraordinarily thick-boned fish linked to the aridification of the Qaidam Basin (northern Tibetan Plateau)

Scattered with numerous salt lakes and approximate to 2,700-3,200 m above sea level, the giant Qaidam inland basin on the northern Tibetan Plateau has experienced continuing aridification since the beginning of the Late Cenozoic as a result of the India-Asia plate collision and associated uplift of the Tibetan Plateau. Previous evidence of aridification comes mainly from evaporite deposits and salinity-tolerant invertebrate fossils. Vertebrate fossils were rare until recent discoveries of abundant fish. Here, we report an unusual cyprinid fish, Hsianwenia wui, gen. et sp. nov., from Pliocene lake deposits of the Qaidam Basin, characterized by an extraordinarily thick skeleton that occupied almost the entire body. Such enormous skeletal thickening, apparently leaving little room for muscles, is unknown among extant fish. However, an almost identical condition occurs in the much smaller cyprinodontid Aphanius crassicaudus (Cyprinodonyiformes), collected from evaporites exposed along the northern margins of the Mediterranean Sea during the Messinian desiccation period. H. wui and A. crassicaudus both occur in similar deposits rich in carbonates (CaCO3) and sulfates (CaSO4), indicating that both were adapted to the extreme conditions resulting from the ariclification in the two areas. The overall skeletal thickening was most likely formed through deposition of the oversaturated calcium and was apparently a normal feature of the biology and growth of these fish.

Kinetics of alkaline phosphatase in lake sediment associated with cage culture of Oreochromis niloticus

Variations in kinetics of alkaline phosphatase occurring in different sites of sediment associated with cage culture of Oreochromis niloticus in a shallow Chinese freshwater lake (Lake Donghu) were described. In addition, the kinetic parameters of each 2.5-cm stratum in the sediment from the surface down to 37.5 cm were analyzed. Horizontally, the V-max values of alkaline phosphatase in surface sediments increased markedly at sites immediately under and adjacent to the cage that would be subjected to the deposition of fish feces. Peak V-max values in the top 5 cm of the sediment under the cage were also observed relative to their deeper control. After a treatment where the fish feces were added over 12 days, the sediment in deeper layer exhibited a significantly higher V-max value, thereby corroborating the relationship between V-max values of alkaline phosphatase and fish feces in sediments. The fish feces exhibited a remarkable alkaline phosphatase activity (APA). Thus, it is indeed a source of the enzyme. Effects of the fish feces were dose- and time-dependent. The V-max values in sediments were always stimulated, but the K-m values showed much more variability. (C) 2001 Elsevier Science B.V. All rights reserved.

Effects of accumulated strain on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot structures

We report the effects of accumulated strain by stacking on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased strain in the stacked QD structures with stacking. The photoluminescence intensity from the QD structures first increases as the stacking number increases from 1 to 3 and then dramatically decreases as it further increases, implying a significant increase in the density of crystal defects in the stacked QD structures due to the accumulated strain. Furthermore, we demonstrate that the strain can be reduced by simply introducing annealing steps just after growing the GaAs spacers during the deposition of the stacked QD structures, leading to significant improvement in the surface and optical properties of the structures. (C) 2007 Elsevier B.V. All rights reserved.

Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

Evolution of surface morphology and optical characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). After deposition of 16 monolayers (ML) of In0.5Ga0.5As, QDs are formed and elongated along the [110] direction when using sub-ML depositions, while large size InGaAs QDs with better uniformity are formed when using ML or super-ML depositions. It is also found that the larger size QDs show enhanced PL efficiency without optical nonlinearity, which is in contrast to the elongated QDs.

Blue-violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface-Emitting Laser With Dielectric Distributed Bragg Reflectors

Optically pumped GaN-based vertical cavity surface-emitting laser (VCSEL) with two Ta2O5/SiO2 dielectric distributed Bragg reflectors (DBRs) was fabricated via a simplifled procedure direct deposition of the top DBR onto the GaN surface exposed after substrate removal and no use of etching and polishing processes. Blue-violet lasing action was observed at a wavelength of 397.3 ran under optical pumping at room temperature with a threshold pumping energy density of about 71.5 mJ/cm(2). The laser action was further confirmed by a narrow emission linewidth of 0.13 nm and a degree of polarization of about 65%. The result suggests that practical blue-violet GaN-bsaed VCSEL can be realized by optimizing the laser lift-off technique for substrate removal.

Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures

Self-assembled InAs quantum dots (QDs) in an InAlGaAs matrix, lattice-matched to InP substrate, have been grown by molecular beam epitaxy (MBE). Transmission electron microscopy (TEM), double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL) are used to study their structural and optical properties. In InAs/InAlGaAs/ InP system, we propose that when the thickness of InAs layer deposited is small, the random strain distribution of the matrix layer results in the formation of tadpole-shaped QDs with tails towards random directions, while the QDs begin to turn into dome-shaped and then coalesce to form islands with larger size and lower density to release the increasing misfit strain with the continuous deposition of InAs. XRD rocking curves showing the reduced strain with increasing thickness of InAs layer may also support our notion. The results of PL measurements are in well agreement with that of TEM images. (C) 2004 Elsevier B.V. All rights reserved.

The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots

The character of InAs quantum dots (QD) directly deposited on a combined InAlAs-GaAs (XML) strained buffer layer (SBL) has been investigated. This growth technique realizes high-density QD (5.88 x 10(10) cm(-2)) by changing the thickness of GaAs in InAlAs-GaAs SBL. The dependence of the density and the aspect ratio of QD on the GaAs thickness has been discussed in detail. The photoluminescence (PL) measurements demonstrate an obvious redshift with the increase of GaAs thickness. In addition, the deposition of InAs QDs grown on the combined InAlAs-GaAs SBL has an important effect of the QD properties. The ordered QD array can be observed from the sample deposited by atomic layer epitaxy, of which the PL peak shows an obvious redshift in comparison to the molecular beam epitaxy (MBE) QDs when the GaAs thicknesses are equal. (c) 2004 Elsevier B.V. All rights reserved.

Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy

Rapid thermal annealing (RTA) has been demonstrated as an effective way to improve the crystal quality of GaInNAs(Sb) quantum wells (QWs). However, few investigations have been made into its application in laser growth and fabrication. We have fabricated 1.3 mu m GaInNAs lasers, both as -grown and with post-growth RTA. Enhanced photoluminescence (PL) intensity and decreased threshold current are obtained with RTA, but the characteristic temperature T-o and slope efficiency deteriorate. Furthermore, T-o has an abnormal dependence on the cavity length. We attribute these problems to the deterioration of the wafer's surface. RTA with deposition Of SiO2 was performed to avoid this deterioration, T-o was improved over the samples that underwent RTA without SiO2. Post-growth and in situ annealing were also investigated in a 1.55 mu m GaInNAsSb system. Finally, continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength over 1.55 mu m was realized by introducing an in situ annealing process. (c) 2007 Elsevier B.V. All rights reserved.

Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy

It is found that both methods using either continuous Sb supply or pre-deposition of a very thin Sb layer are efficient for the Sb-assisted molecular beam epitaxy growth of highly strained InGaAs/GaAs quantum wells (QWs). The emission of QWs is extended to long wavelength close to 1.25 mu m with high luminescence efficiency at room temperature. The influence of rapid thermal annealing (RTA) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained QWs. A relatively low RTA temperature of 700 degrees C with a short duration of 10 s is suggested for optimizing the annealing effect. (c) 2005 Elsevier B.V. All rights reserved.

New way to enhance the uniformity of self-organized InAs quantum dots

Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the mean height of Quantum dots. Uniformity of quantum dots has been enhanced because the full width of half maximum of photoluminescence decrease from 80meV to 27meV in these samples as the interruption time increasing from 0 to 120 second. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time. This effect can be used to control the energy level of quantum dots. The phenomena mentioned above can be attributed to the diffusion of In atoms from the top of InAs islands to the top of GaAs cap layer caused by the difference of surface energies between InAs and GaAs.