Stoichiometry in GaAs grown in outer space measured nondestructively

A semi-insulating (SI) GaAs single crystal ingot was successfully grown in a recoverable satellite. The two-dimensional distribution of stoichiometry in space-grown SI-GaAs single crystal wafer was studied nondestructively based upon x-ray Band diffraction. The avenge stoichiometry in the space-grown crystal is 0.50007 with mean square deviation of 6 x 10(-6), and shows a better stoichiametric property than the ground-grown SI-GaAs. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2). This result indicates that the structural properly of the crystal is quite good.

Space grown semi-insulating gallium arsenide single crystal and its application

Low noise field effect transistors and analogue switch integrated circuits (ICs) have been fabricated in semi-insulating gallium arsenide (SI-GaAs) wafers grown in space by direct ion-implantation. The electrical behaviors of the devices and the ICs have surpassed those fabricated in the terrestrially grown SI-GaAs wafers. The highest gain and the lowest noise of the transistors made from space-grown SI-GaAs wafers are 22.8 dB and 0.78 dB, respectively. The threshold back-gating voltage of the ICs made from space-grown SI-GaAs wafers is better than 8.5 V The con-elation between the characterizations of materials and devices is studied systematically. (C) 2002 COSPAR. Published by Elsevier Science Ltd. All rights reserved.

Semi-insulating GaAs grown in outer space

A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.

Structural properties of SI-GaAs grown in space

The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4+/-0.08 are seconds. The average density of dislocations revealed by molten KOH is 2.0 X 10(4) cm(-2), and the highest density is 3.1 X 10(4) cm(-2). The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (C) 1999 COSPAR. Published by Elsevier Science Ltd.

Study of turbulent heat transfer of aviation kerosene flows in a curved pipe at supercritical pressure

The now and heat transfer characteristics of China No. 3 aviation kerosene in a heated curved tube under supercritical pressure are numerically investigated by a finite volume method. A two-layer turbulence model, consisting of the RNG k-epsilon two-equation model and the Wolfstein one-equation model, is used for the simulation of turbulence. A 10-species kerosene surrogate model and the NIST Supertrapp software are applied to obtain the thermophysical and transport properties of the kerosene at various temperature under a supercritical pressure of 4 MPa. The large variation of thermophysical properties of the kerosene at the supercritical pressure make the flow and heat transfer more complicated, especially under the effects of buoyancy and centrifugal force. The centrifugal force enhances the heat transfer, but also increases the friction factors. The rise of the velocity caused by the variation of the density does not enhance the effects of the centrifugal force when the curvature ratios are less than 0.05. On the contrary, the variation of the density increases the effects of the buoyancy. (C) 2010 Elsevier Ltd. All rights reserved.

Modal correction for fiber-coupling efficiency in free-space optical communication systems through atmospheric turbulence

High-speed free-space optical communication systems have recently used fiber-optical components. The coupling efficiency with which the received laser beam can be coupled into a single-mode fiber is noticeably limited by atmospheric turbulence due to the degradation of its spatial coherence. Fortunately, adaptive optics (AO) can alleviate this limitation by partially correcting the turbulence-distorted wavefront. The coupling efficiency improvement provided by Zernike modal AO correction is numerically evaluated. It is found that the first 3-20 corrected polynomials can considerably improve the fiber-coupling efficiency. The improvement brought by AO is compared with that brought by a coherent fiber array. Finally, a hybrid technique that integrates AO and a coherent fiber array is proposed. Results show that the hybrid technique outperforms each of the two above-mentioned techniques. (C) 2009 Elsevier GmbH. All rights reserved.

Development and transition of spiral wave in the coupled Hindmarsh-Rose neurons in two-dimensional space

The dynamics and the transition of spiral waves in the coupled Hindmarsh-Rose (H-R) neurons in two-dimensional space are investigated in the paper. It is found that the spiral wave can be induced and developed in the coupled HR neurons in two-dimensional space, with appropriate initial values and a parameter region given. However, the spiral wave could encounter instability when the intensity of the external current reaches a threshold value of 1.945. The transition of spiral wave is found to be affected by coupling intensity D and bifurcation parameter r. The spiral wave becomes sparse as the coupling intensity increases, while the spiral wave is eliminated and the whole neuronal system becomes homogeneous as the bifurcation parameter increases to a certain threshold value. Then the coupling action of the four sub-adjacent neurons, which is described by coupling coefficient D', is also considered, and it is found that the spiral wave begins to breakup due to the introduced coupling action from the sub-adjacent neurons (or sites) and together with the coupling action of the nearest-neighbour neurons, which is described by the coupling intensity D.