Food consumption and growth of two piscivorous fishes, the mandarin fish and the Chinese snakehead

Rates of maximum food consumption and growth were determined for immature mandarin fish Siniperca chuatsi (47.2-540.2 g) and Chinese snakehead Channa argus (45.0-546.2 g) at 10, 15, 20, 25, 30 and 35 degrees C. The relationship between maximum rate of food consumption (C-max), body weight (W) and temperature (T) was described by the multiple regression equations: lnC(max) = -4.880 + 0.597 lnW+0.284T - 0.0048T(2) for the mandarin fish, and lnC(max)= -6.718 + 0.522 lnW+0.440T-0.0077T(2) for the Chinese snakehead. The optimum temperature for consumption was 29.6 degrees C for the mandarin fish and 28.6 degrees C for the Chinese snakehead. The relationship between growth rate (G), body weight and temperature was ln(G+0.25)= - 0.439 - 0.500 lnW+0.270T - 0.0046T(2) for the mandarin fish, and ln(G+0.25)= - 6.150+ (0.175 - 0.026T) lnW+0.571T - 0.0078T(2) for the Chinese snakehead. The weight exponent in the growth-weight relationship was -0.83 for the mandarin fish, but decreased with increasing temperature for the Chinese snakehead. The optimum temperature for growth was 29.3 degrees C for the mandarin fish, but tended to decrease with increasing weight for the Chinese snakehead, being 30.3 degrees C for a 45-g fish, and 26.1 degrees C for a 550-g fish. (C) 1998 The Fisheries Society of the British Isles.

Effect of body size on growth and energy budget of Nile tilapia, Oreochromis niloticus

A growth trial was conducted at 30 degrees C to investigate the effect of body size on growth and energy budget of Nile tilapia. The average initial body weights of the four size groups tested were 9.3, 34.1, 80.3 and 172.4 g, respectively. Fish were fed to satiation twice a day with a diet containing 35.6% crude protein. Food consumption (C-max: kJ/day) increased with body size (W: g) according to the relationship: Ln C-max = 1.45 + 0.42 LnW. The final body contents of dry matter, crude protein and ash per unit body weight increased with increasing body size while contents of fat and energy were independent of body size. Specific growth rates of wet weight, dry weight, protein and energy decreased as the fish increased in size. Feed efficiencies in wet weigh, dry weight and crude protein decreased with increasing body size, while that of energy remained unchanged. The proportions of energy intake allocated to the various components (faecal energy, excretory energy, heat production and recovered energy) of the energy budget were not significantly affected by body size, and the average budget was: 100IE-18.5(+/- 1.33)FE + 5.9 (+/- 3.09)(ZE + UE) + 49.3(+/- 3.77)HE + 26.3(+/- 6.23)RE, where IE, FE, (ZE + UE), HE and RE represent gross energy intake, faecal energy, excretory (non-faecal) energy loss, heat production and recovered energy (growth), respectively. It is suggested that the decrease in growth rate in larger fish is mainly due to the decrease in relative food intake. (C) 1997 Elsevier Science B.V.

Growth performance of juvenile white sturgeon as affected by feeding regimen

Juvenile (mean +/- SE, 8.6 +/- 0.1 g) white sturgeon Acipenser transmontanus were fed for 8 weeks under one of six feeding regimens: continuously 24 h/d (C24); continuously 12.8 h/d during the day (C12/D), continuously 12.8 h/d at night (C12/N), 6 meals/d (M6), 4 meals/d (M4), and 2 meals/d (M2). Specific growth rate, feed efficiency, and body lipid content were significantly (P < 0.05) affected by the feeding regimen. These variables were highest in the C24 group and lowest in the M2 group; fish in the M6 group showed the second best performance. Specific growth rate and feed efficiency in terms of wet weight in the M6 groups were not significantly different from those in the C24 groups, but specific growth rate in terms of energy and energy retention efficiency were significantly lower. Feeding regimen had no effect on condition factor, hepatosomatic index, coefficient of variation in final body weight, and protein and ash contents. There was no significant difference in these indexes between 12.8-h/d continuous feeding by day or by night. It was concluded that continuous feeding for 24 h/d was the optimum feeding regimen for juvenile white sturgeon.

EFFECT OF RATION SIZE ON THE GROWTH AND ENERGY BUDGET OF THE GRASS CARP, CTENOPHARYNGODON-IDELLA VAL

Young grass carp (12-13 g) were kept at five ration levels ranging from starvation to ad libitum feeding at 30-degrees-C. They were fed duckweed. Food consumption, absorption efficiency and growth were determined directly, and metabolism and nitrogenous excretion calculated indirectly from energy and nitrogen budgets, respectively. The relationship between specific growth rate and ration size was linear. Absorption efficiency for energy was not affected by ration size and averaged 50.6 +/- 0.57% (mean +/- s.e.). Depending on ration size, energy lost in excretion accounted for 4.5-5.9% of the food energy, energy channelled to metabolism accounted for 34.4-48.3% of the food energy, and energy retained as growth accounted for 6.7-11.9% of the food energy. Regardless of ration, a constant proportion of food energy (30.7%) was accounted for by feeding metabolism (total metabolism minus fasting metabolism). The energy budget at the maximum ration was: 100 C = 49.1F + 4.5U + 3.6R(fa) + 30.9R(fe) + 11.9G, where C, F, U, R(fa), R(fe) and G represent food consumption, faecal production, excretion, fasting metabolism, feeding metabolism and growth, respectively.

HORMONAL REPLACEMENT THERAPY IN FISH - HUMAN GROWTH-HORMONE GENE-FUNCTION IN HYPOPHYSECTOMIZED CARP

Transgenic common carp, Cyprinus carpio, produced by the microinjection of fertilized eggs with a linearized chimeric plasmid pMThGH, a human growth hormone (hGH) gene with a mouse metallothionein-I (MT) gene promoter in pBR322, were used to produce F1 and F2 transgenics. Following hypophysectomy of the transgenic F2 common carp, non-transgenic common carp and non-transgenic crucian carp, growth was monitored for up to 110 days. In addition, recombinant hGH was injected subcutaenously into a group of the non-transgenic crucian carp. Growth rate analyses indicated that (1) hypophysectomy of non-transgenic common carp and crucian carp results in the cessation of growth, (2) hGH administration can stimulate the growth of hypophysectomized crucian carp and (3) hypophysectomized hGH-transgenic common carp continue to grow in the absence of their own growth hormone, suggesting that the hGH-transgene is being expressed in tissues other than the pituitary.

The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition

The effect of the growth temperature on the surface and interface quality for the GaN/AlN multiquantum well (MQW) layer grown by metal-organic vapour chemical deposition is investigated. The obtained GaN/AlN MQW structure is almost coherent to the underlying AlGaN layer at improved growth conditions. With a relatively low growth temperature, the GaN/AlN MQW growth rate increases, the surface roughness reduces considerably and no macro steps are observed, resulting in a better periodicity of MQW.

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Temperature dependence of surface quantum dots grown under frequent growth interruption

We grow In-GaAs quantum dot (QD) at low growth rate with 70 times insertion of growth interruption in MBE system. It is found that because of the extreme growth condition, QDs exhibit a thick wetting layer, large QD height value and special surface morphology which is attributed to the In segregation effect. Temperature dependence of photoluminescence measurement shows that this kind of QDs has a good thermal stability which is explained in terms of a "group coupling" model put forward by us. (C) 2007 Elsevier B.V. All rights reserved.

Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films

In this work, the influences of CCl4 on the metalorganic chemical vapor deposition (MOCVD) growth of InN were studied for the first time. It was found that the addition of CCl4 can effectively suppress the formation of metal indium (In) droplets during InN growth, which was ascribed to the etching effect of Cl to In. However, with increasing of CCl4 flow, the InN growth rate decreased but the lateral growth of InN islands was enhanced. This provides a possibility of promoting islands coalescence toward a smooth surface of the InN film by MOCVD. The influence of addition of CCl4 on the electrical properties was also investigated.

Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition

The effects of annealing on the optical properties of InAs/GaAs quantum dots (QDs) grown under different conditions by metalorganic chemical vapor deposition (MOCVD) are studied. A lower QD growth rate leads to an earlier and faster decrease of QD photoluminescence (PL) intensity with increasing annealing temperature. which is proposed to be related to the increased QD two-dimensional (2D)-three-dimensional (3D) transition critical layer thickness at low QD growth rate. High-quality GaAs cap layers grown at high temperature and a low deposition rate are shown to decrease the blueshift of the QDs' emission wavelength significantly during in-situ I h annealing experiments, which is important for the fabrication of long-wavelength InAs/GaAs QD lasers by MOCVD technique. (C) 2009 Elsevier B.V. All rights reserved.

Growth of nano-structures on composition-modulated InAlAs surfaces

InAs self-organized nanostructures were grown with variant deposition thickness and growth rate on closely matched InAlAs/InP by molecular-beam epitaxy. The structural properties. of InAs and InAlAs layer were studied. It is found that the InAs morphology is insensitive to the growth conditions. Transmission electron microscopy and reflectance difference spectroscopy measurements show that the InAlAs matrix presents lateral composition modulation which gives birth to surface anisotropy. Based on the dependence of the InAs morphology on the anisotropy of the InAlAs layer, a modified Stranski-Krastanow growth mode is presented to describe the growth of the nanostructure on a composition-modulated surface.

Low-temperature growth of InN by MOCVD and its characterization

Metalorganic chemical vapor deposition growth of InN on sapphire substrate has been investigated between 400 degrees C and 500 degrees C to seek the growth condition of InN buffer layer, i.e. the first step of realization of the two-step growth method. Ex situ characterization of the epilayers by means of atomic force microscope, scanning electron microscope and X-ray diffraction, coupled with in situ reflectance curves, has revealed different growth circumstances at these temperatures, and conclusion has been reached that the most suitable temperature for buffer growth is around 450 degrees C. In addition, the growth rate of InN at the optimized temperature with regard to different precursor flow rates is studied at length. (c) 2004 Elsevier B.V. All rights reserved.

In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy

N-p-n Si/SiGe/Si heterostructures have been grown by a disilane (Si2H6) gas and Ge solid sources molecular beam epitaxy system using phosphine (PH3) and diborane (B2H6) as n- and p-type in situ doping sources, respectively. Adopting an in situ doping control technology, the influence of background B dopant on the growth of n-Si emitter layer was reduced, and an abrupt B dopant distribution from SiGe base to Si emitter layer was obtained. Besides, higher n-type doping in the surface region of emitter to reduce the emitter resist can be realized, and it did not result in the drop of growth rate of Si emitter layer in this technology. (C) 2004 Elsevier B.V. All rights reserved.

Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy

GaSb 1 mu m-thick layers were grown by molecular beam epitaxy on GaAs (001). The effects of the growth conditions on the crystalline quality, surface morphology, electrical properties and optical properties were studied by double crystalline x-ray diffraction, atomic force microscopy, Hall measurement and photoluminescence spectroscopy, respectively. It was found that the surface roughness and hole mobility are highly dependent on the antimony-to-gallium flux ratios and growth temperatures. The crystalline quality, electrical properties and optical properties of GaSb layers were also studied as functions of growth rate, and it was found that a suitably low growth rate is beneficial for the crystalline quality and electrical and optical properties. Better crystal quality GaSb layers with a minimum root mean square surface roughness of 0.1 nm and good optical properties were obtained at a growth rate of 0.25 mu m h(-1).

Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition

The effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition is investigated. With the increase of trimethylalluminum (TMAl) flux, the crystal quality becomes worse, and the epilayer surface becomes rougher. An interesting phenomenon is that the growth rate of AlGaN decrease with increasing TMAl flux, which is opposite to the AlN growth rate dependence on the TMAl flux. All these effects are attributed to the different properties of At atoms due to the higher bond strength of Al-N compared with Ga-N, which lead to lower surface mobility and stronger competitive ability of Al atoms during the growth. The enhancement of the surface mobility of Al is especially important for improving the quality of AlGaN. (c) 2006 Elsevier B.V. All rights reserved.