THE MATRIX ANALYSIS FOR AN OPTICAL FREE-SPACE SWITCHING NETWORK AND AN OPTICAL CROSSOVER NETWORK WITH 4-FUNCTION INTERCHANGE NODES

A matrix analysis for free-space switching networks, such as perfect shuffle-exchange omega, crossover and Banyan is presented. On the basis of matrix analysis, the equivalence of these three switching networks and the route selection between input and output ports are simply explained. Furthermore, an optical crossover switching network, where MQW SEED arrays are used as electrically addressed four-function interchange nodes, is described and the optical crossover interconnection of 64 x 64, and high-speed four-function, interchange nodes is demonstrated in the experiment.

STUDY OF THE LONG-TERM STABILITY OF THE EFFECTIVE CONCENTRATION OF IONIZED SPACE CHARGES (N-EFF) OF NEUTRON-IRRADIATED SILICON DETECTORS FABRICATED BY VARIOUS THERMAL-OXIDATION PROCESSES

Experimental study of the reverse annealing of the effective concentration of ionized space charges (N-eff, also called effective doping or impurity concentration) of neutron irradiated high resistivity silicon detectors fabricated on wafers with various thermal oxides has been conducted at room temperature (RT) and elevated temperature (ET). Various thermal oxidations with temperatures ranging from 975 degrees C to 1200 degrees C with and without trichlorethane (TCA), which result in different concentrations of oxygen and carbon impurities, have been used. It has been found that, the RT annealing of the N-eff is hindered initially (t < 42 days after the radiation) for detectors made on the oxides with high carbon concentrations, and there was no carbon effect on the long term (t > 42 days after the radiation) N-eff reverse annealing. No apparent effect of oxygen on the stability of N-eff has been observed at RT. At elevated temperature (80 degrees C), no significant difference in annealing behavior has been found for detectors fabricated on silicon wafers with various thermal oxides. It is apparent that for the initial stages (first and/or second) of N-eff reverse annealing, there may tie no dependence on the oxygen and carbon concentrations in the ranges studied.

Growth of Space Ordered on GaAs（100） Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD

Space ordered 1.3μm self-assembled InAs QDs are grown on GaAs（100） vicinal substrates by MOCVD. Photoluminescence measurements show that the dots on vicinal substrates have a much higher PL intensity and a narrower FWHM than those of dots on exact substrates, which indicates better material quality. To obtain 1.3μm emissions of InAs QDs, the role of the so called InGaAs strain cap layer （SCL） and the strain buffer layer （SBL） in the strain relaxation process in quantum dots is studied. While the use of SBL results only in a small change of emission wavelength,SCL can extend the QD＇s emission over 1.3μm due to the effective strain reducing effect of SCL.

Space-grown SI-GaAs and its application

A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-travelling furnace under microgravity. The crystal was characterized systematically and was used in fabricating low noise field effect transistors and analogue switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. This result shows that device-grade space-grown semiconducting single. crystal has surpassed the best. terrestrial counterparts. Studies on the correlation between SI-GaAs wafers and the electronic devices and integrated circuits indicate that the characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry.

Stoichiometry in GaAs grown in outer space measured nondestructively

A semi-insulating (SI) GaAs single crystal ingot was successfully grown in a recoverable satellite. The two-dimensional distribution of stoichiometry in space-grown SI-GaAs single crystal wafer was studied nondestructively based upon x-ray Band diffraction. The avenge stoichiometry in the space-grown crystal is 0.50007 with mean square deviation of 6 x 10(-6), and shows a better stoichiametric property than the ground-grown SI-GaAs. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2). This result indicates that the structural properly of the crystal is quite good.

Space grown semi-insulating gallium arsenide single crystal and its application

Low noise field effect transistors and analogue switch integrated circuits (ICs) have been fabricated in semi-insulating gallium arsenide (SI-GaAs) wafers grown in space by direct ion-implantation. The electrical behaviors of the devices and the ICs have surpassed those fabricated in the terrestrially grown SI-GaAs wafers. The highest gain and the lowest noise of the transistors made from space-grown SI-GaAs wafers are 22.8 dB and 0.78 dB, respectively. The threshold back-gating voltage of the ICs made from space-grown SI-GaAs wafers is better than 8.5 V The con-elation between the characterizations of materials and devices is studied systematically. (C) 2002 COSPAR. Published by Elsevier Science Ltd. All rights reserved.

Semi-insulating GaAs grown in outer space

A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.

Structural properties of SI-GaAs grown in space

The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4+/-0.08 are seconds. The average density of dislocations revealed by molten KOH is 2.0 X 10(4) cm(-2), and the highest density is 3.1 X 10(4) cm(-2). The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (C) 1999 COSPAR. Published by Elsevier Science Ltd.

Modal correction for fiber-coupling efficiency in free-space optical communication systems through atmospheric turbulence

High-speed free-space optical communication systems have recently used fiber-optical components. The coupling efficiency with which the received laser beam can be coupled into a single-mode fiber is noticeably limited by atmospheric turbulence due to the degradation of its spatial coherence. Fortunately, adaptive optics (AO) can alleviate this limitation by partially correcting the turbulence-distorted wavefront. The coupling efficiency improvement provided by Zernike modal AO correction is numerically evaluated. It is found that the first 3-20 corrected polynomials can considerably improve the fiber-coupling efficiency. The improvement brought by AO is compared with that brought by a coherent fiber array. Finally, a hybrid technique that integrates AO and a coherent fiber array is proposed. Results show that the hybrid technique outperforms each of the two above-mentioned techniques. (C) 2009 Elsevier GmbH. All rights reserved.

青藏高原东缘高山林线乔木种群生态特征研究

青藏高原东部分布着世界最高的林线，该区域也是由欧亚北温带物种形成的林线的南界。在大面积野外踏勘的基础上，选择青藏高原东部具有典型高山林线分布的三个地点（滇西北白马雪山、川西北鹧鸪山及岷江源地区）作为研究区，从种群的结构、生存特征、分布格局及分形特征等方面对青藏高原东缘高山林线乔木种群生态学特征进行了研究，并在此基础上探讨了人类活动对林线种群生态特征及林线格局的影响。结果表明，林线区乔木树种多以单种群形式存在，林线区群落结构简单，乔木层多为单一树种组成，其生长型较之郁闭林发生了急剧的变化：树木高度急剧下降，而发展多茎多分枝的生长型。生长型的转变是高山林线乔木对恶劣自然条件的形态适应。 研究发现，在青藏高原东缘，阴坡林线乔木主要是冷杉（Abies spp.），阳坡主要由圆柏（Sabina spp.）组成，少数地方还有云杉（Picea spp.）。阴坡乔木种群结构多表现为增长型，幼苗和幼树在种群中占较大比重，种群潜在自然更新能力较强，但幼龄个体死亡率非常高，存活曲线多接近Deevey-Ⅲ型；阳坡乔木种群幼苗个体数极少，幼树相对增加。野外调查表明，人为活动较频繁的阳坡林线区幼苗数量极少甚至缺失，而受人为活动干扰较小的样地中幼苗和幼树数量明显增多，从一个侧面说明放牧等人类活动可能对林线种群的更新带来较大影响，而对卡卡沟围栏内外的样地分析也进一步证明了这一结果。 所研究林线乔木种群各龄级的空间格局在不同尺度上表现为聚集、随机和均匀分布，以聚集分布为主；各龄级在不同尺度上表现出显著的相关性，幼苗通常与另外两个龄级的关联性较密切。各龄级间显著的相关性表明不同龄级个体在空间交错分布，有利于对各种资源的充分利用，对种群的生存和发展非常有利，反映了高山生态系统恶劣生境中种群的一种适应对策。 林线乔木种群各龄级分布格局的计盒维数有差别，林线种群的计盒维数总是小于郁闭林种群的计盒维数。另外，郁闭林各龄级计盒维数通常也高于林线各龄级，表明不同海拔或者不同群落类型中的乔木树种具有不同的水平空间占据能力。林线区种群分布格局的计盒维数都很低，占据现实水平空间的程度较低，具有相对较高的生态间隙维，其潜在占据空间的能力较高，群落还可提供给种群的最大空间限度较大，但实际上由于受群落中种内、种间的竞争及林线区恶劣的生态环境条件的限制，其潜在空间占据能力可能难以表现出来。 青藏高原东缘高海拔地带以季节性游牧为主要的资源利用和生产方式，阳坡森林郁闭度低于阴坡，灌丛数量和种类较阴坡少，融雪早且积雪时间短，所以阳坡包括高山林线区成为当地牧民游牧路线的必经之地。牲畜的践踏、啃食使得幼龄乔木树种个体数量大大减少，严重阻碍了林线乔木种群的自然更新，同时种群占据空间的能力也明显降低。因此可以认为，在青藏高原东部地区，山地游牧等人为干扰叠加于恶劣的自然条件，阳坡林线的自然更新潜力受到抑制，其生存状态较之阴坡林线显著恶化，并可使阳坡林线高度逐渐降低。高山林线区森林一旦破坏在短时间内很难有效更新和恢复，因此，对于处于恶劣高山生境中的乔木种群应加强保护，同时适度控制人为干扰强度和幅度以减少其直接和间接破坏，防止阳坡林线退化并促进高山生态系统的自然恢复。 Eastern Qinghai-Tibetan Plateau has the highest timberline of the world. On the basis of field surveys and literature reviews, three typical alpine timberlines were chosen for in-depth studies, i.e., Baima Snow Mountain in northwest Yunnan, Zhegu Mountain and the waterhead area of Minjiang River in west Sichuan. Using the methodologis of population ecology, we analyzed the population structure, survival characteristics, spatial point patterns and fractal dimensions of the timberline tree populations and discussed the impacts of grazing on the structure and spatial pattern of alpine timberline. Compared with closed forests, the community structure of timberline is simpler, usually with one or two species constituting the tree layer. Differences also exist in the growth forms: the trees were significantly shorter with more stems and branches, reflecting morphological adaptation of trees to the severe conditions at timberline. In the eastern Qinghai-Tibetan Plateau, Abies spp. often formed alpine timberline in the north-facing slope while Sabina spp. and sometimes Picea spp. in the south- facing slope. The population structures of north-facing slope showed an increasing trend, with numerous seedlings and saplings. However, the survival curves tend to follow Deevy-III because of high dead ratio of young individuals. There are only few seedlings in the south-facing slope with heavy grazing, demonstrating that human disturbance may prevent regeneration at alpine timberline, which was confirmed by comparisons between fenced enclosures and control plots in the Kaka Valley. Depending on the spatial scales on consideration, the individuals of different age-classes showed clumping, random or even distribution, but mostly with clumping distribution. At all scales, individuals in different age-classes were all significantly correlated with each other while the seedlings were usually more correlated to two other age classes. This high degree of correlation among different age classes indicates that individuals of different age classes are spatially interlocked with each other, which helps sufficient utilization of various resources and is conducive to the survival and development of population. It is another adaptation strategy for trees at the severe environment. The spatial patterns of different age classes had different box dimension. In general, the box dimensions of total individuals and each age class at timberline are always smaller than that of closed forests, suggesting that space occupation capacity is not the same for populations at different altitude or in different communities. Populations on both the south- and the north-facing slopes had a very low box dimensions (far away from the max., 2), however, the lower the box dimension, the bigger the potential space provided by community. In fact, because of inner- and inter- competition as well as the severe conditions at timberline, this kind of potential ability can hardly be realized. Mountain pastoralism is the major type of as well as the only most effective way of resource uses in the high elevation regions of the eastern Qinghai-Tibetan Plateau. Due to lower canopy cover, less bushes and short snow-cover time, south-facing slopes became the favorite pastures. Damages from livestock through tramping, browsing and others have greatly reduced the number of young individuals. As a result, the potential of timberline trees to regenerate and their ability to occupy more space are greatly inhitibted. We conclude that human disturbances (mountain pastoralism) as well as harsh environmental conditions co-worked to inhibit the regeneration of tree populations in the south-facing slope and made south slopes more difficult than the north-facing slopes for trees to survive and develop, resulting a gradual retreat of timberline in the north-facing slopes. Forests at alpine timberline are susceptible to disturbance and difficult to regenerate and restore once damaged and controlling human disturbances is important for protecting the forest ecosystems at the timberline area.