X-ray spectra induced by slow highly charged Arq+ ions in collision with Nb surface

The X-ray spectra of Nb surface induced by Arq+ (q = 16,17) ions with the energy range from 10 to 20 keV/q were studied by the optical spectrum technology. The experimental results indicate that the multi-electron excitation occurred as a highly charged Ar16+ ion was neutralized below the metal surface. The K shell electron of Ar16+ was excited and then de-excited cascadly to emit K X-ray. The intensity of the X-ray emitted from K shell of the hollow Ar atom decreased with the increase of projectile kinetic energy. The intensity of the X-ray emitted from L shell of the target atom Nb increased with the increase of projectile kinetic energy. The X-ray yield of Ar17+ is three magnitude orders larger than that of Ar16+.

X-ray spectra produced by interaction of Ar16+ and Ar17+ with Zr

The 10-20 qkeV Ar16+ and Ar17+ ions produced by SECRAL enter on metallic surface of Zr. In this interaction, the multi-electron excitation possibly occurred in the neutralization of the highly charged Ar16+ ions, which produced vacancy in the K shell. Electron of the high n state de-excited to K vacancy gives off X-ray. The experimental results show that X-ray intensities for the Ar hollow atom decrease with increase of incidence energy, and L beta X-ray intensities of target atom Zr increase with increasing incidence energy. K alpha X-ray yield per ion for Ar17+ was five orders of magnitude greater than that for Ar16+

X-ray spectra induced by Xe-129(q+) impacting the metal surface

Using the slow highly charged ions Xe-129(q+) (q = 25, 26, 27; initial kinetic T-0 <= 4.65 keV/a.u.) to impact Au surface, the Au atomic M alpha characteristic X-ray spectrum is induced. The result shows that as long as the charge state of projectile is high enough, the heavy atomic characteristic X-ray can be effectively excited even though the incident beam is very weak (nA magnitude), and the X-ray yield per ion is in the order of 10(-8) and increases with the kinetic energy and potential energy of projectile. By measuring the Au M alpha-X-ray spectra, Au atomic N-level lifetime is estimated at about 1.33x10(-18) s based on Heisenberg uncertainty relation.

X-ray spectra induced in highly charged Ar-40(q+) interacting with Au surface

By use of optical spectrum technology, the spectra of X-ray induced by highly charged Ar-40(q+) ions interacting with Au surface have been studied. The results show that the argon K alpha X-ray were emitted from the hollow atoms formed below the surface. There is a process of multi-electron exciting in neutralization of the Ar16+ ion, with electronic configuration 1s(2) in its ground state below the solid surface. The yield of the projectile K alpha X-ray is related to its initial electronic configuration, and the yield of the target X-ray is related to the projectile kinetic energy.

Time and space-resolved measurement of a gas-puff laser-plasma x-ray source

The dynamic interaction processes between a nano-second laser pulse and a gas-puff target, such as those of plasma formation, laser heating, and x-ray emission, have been investigated quantitatively. Time and space-resolved x-ray and optical measurement techniques were used in order to investigate time-resolved laser absorption and subsequent x-ray generation. Efficient absorption of the incident laser energy into the gas-puff target of 17%, 12%, 38%, and 91% for neon, argon, krypton, and xenon, respectively, was shown experimentally. It was found that the laser absorption starts and, simultaneously, soft x-ray emission occurs. The soft x-ray lasts much longer than the laser pulse due to the recombination. Temporal evolution of the soft x-ray emission region was analyzed by comparing the experimental results to the results of the model calculation, in which the laser light propagation through a gas-puff plasma was taken into account. (C) 2003 American Institute of Physics.

The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering

The microstructures of hydrogenated microcrystalline silicon (tic-Si: H) thin films, prepared by plasma-enhanced chemical vapor deposition (PECVD), hot wire CVD(HWCVD) and plasma assisted HWCVD (PE-HWCVD), have been analyzed by the small angle x-ray scattering(SAXS) measurement. The SAXS data show that the microstructures of the μ c-Si: H films display different characteristics for different deposition techniques. For films deposited by PECVD, the volume fraction of micro-voids and mean size are smaller than those in HWCVD sample. Aided by suitable ion-bombardment, PE-HWCVD samples show a more compact structure than the HWCVD sample. The microstructure parameters of the μ c-Si: H thin films deposited by two-steps HWCVD and PE-HWCVD with Ar ions are evidently improved. The result of 45&DEG; tilting SAXS measurement indicates that the distribution of micro-voids in the film is anisotropic. The Fouriertransform infrared spectra confirm the SAXS data.

X-ray diffraction analysis on gallium-indium interdiffusion in quantum dot superlattices

Thermal-induced interdiffusion in InAs/GaAs quantum dot superlattices is studied by high-resolution x-ray diffraction rocking curve and photoluminescence techniques. With increasing annealing temperatures, up to 300 meV a blueshift of the emission peak position and down to 16.6 meV a narrowing of the line width are found in the photoluminescence spectra, and respective intensity of the higher-order satellite peaks to lower-order ones in the x-ray rocking curves decreases. Dynamical theory is employed to simulate the measured x-ray diffraction data. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness and stress variations caused by interdiffusion are taken into account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The estimated diffusion coefficient is 1.8 x 10(-17) cm(2) (.) s(-1) at 650 degreesC, 3.2 x 10(-17) cm(2 .) s(-1) at 750 degreesC, and 1.2 x 10(-14) cm(2 .) s(-1) at 850 degreesC.

Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction

Cubic GaN was grown on GaAs(100) by low pressure metal organic chemical vapor deposition (MOCVD). X-ray diffraction, scanning electron microscope (SEM) and photoluminescence (PL) spectra were performed to characterize the quality of the GaN film. The PL spectra of cubic GaN thin films being thicker than 1.5 mu m were reported. Triple-crystal diffraction to analyze orientation distributions and strain of the thin films was also demonstrated.

The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

This work was supported by the 863 High Technology R&D Program of China (Grant Nos. 2007AA03Z402 and 2007AA03Z451), the Special Funds for Major State Basic Research Project (973 program) of China (Grant No. 2006CB604907), and the National Science Foundation of China (Grant Nos. 60506002 and 60776015). The authors express their appreciation to Dr. Tieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions.

Kinetic energy and charge state effects in the X-ray emission of Mo surface induced by Xeq+ (q=25, 29) ions

L-shell X-ray spectra of Mo surface induced by Xe25+ and Xe29+ were measured. The X-ray intensity was obtained in the kinetic energy range of the incident ions from 350 to 600 keV. The relationship of X-ray intensity with kinetic energy of the projectile and its charge state were studied, and the simple explanation was given.

X-ray emission of hollow atoms formed by highly charged argon and xenon ions below a beryllium surface

The X-ray emission induced by highly charged argon and xenon ions impinging on a beryllium surface is investigated. It is found that spectra of the X-ray induced by Ar-17,Ar-18+ interacting with the surface are very different from those of the X-ray induced by Ar-17,Ar-18+ interacting with residual gases. The result provides an experimental evidence for the existence of hollow atoms below the surface. Several unexpected X-ray lines are also found in the experiment. Firstly, K X-rays are observed when Ar16+ ions which initially have no K shell holes interact with the surface. Secondly, if there are more than 2 M shell vacancies at the initial time, strong M alpha alpha two-electron-one-photon (TEOP) transitions are found in the collisions of Xe-28+,Xe-29+,Xe-30+ ions with the surface.

X-ray emission produced by interaction of highly ionized Arq+ ions with metallic targets

This paper studies the X-ray spectra produced by the interaction of highly charged ions of Arq+ (q = 16, 17, 18) with metallic surface of Be, Al, Ni, Mo and Au respectively. The experimental results show that the K alpha X-ray emerges from under the surface of solid in the interaction of ions with targets. The multi-electron excitation occurred in the process neutralization of the Ar16+ in electronic configuration of 1s(2) in metallic surfaces, which produces vacancy in the K shell. Electron from high n state transition to K vacancy gives off X-ray. We find that there is no obvious relation between the shape of X-ray spectra and the different targets. The X-ray yield of incident ions are associated with initial electronic configuration. The X-ray yield of target is related to the kinetic energy of the incident ions.

X-ray spectrum emitted by the impact of Xe-129(q+) on Mo surface

We studied the characteristic X-ray spectra produced by the interaction of highly charged ions of X-129(q+) (q =25, 26, 27) with surface of metallic Mo. The experimental result shows that highly charged ions can excite the characteristic X-ray spectra of L-shell of Mo when the beam' s intensity is not more than 120 nA. The X-ray yield of single ion reaches a quantitative level of 10(-8) and increases with the increment of the ion' s kinetic energy and ionic charge (potential energy). By measuring the X-ray spectra of Mo-L alpha(1) the M-level lifetime of Mo atom is estimated by using Heisenberg uncertainty relation.

Studies of K-shell x-ray energy shifts induced by MeV/u heavy ions

This paper reports that the K x-ray spectra of the thin target 47Ag, 48Cd, 49In and 50Sn were measured by an HPGe semi-conductor detector in collisions with 84.5 MeV 6C4+ ions. Our experiment revealed the Kα x-ray energy shifts were not obvious and the Kβ1 x-ray energy shifts were about 90∼110 eV. The simple model of Burch et al has been previously used to calculate the K x-ray energy shifts due to an additional vacancy in 2p orbit. The present work extends the model of Burch to calculate the x-ray energy shifts of multiple ionized atoms induced by heavy ions with kinetic energy of MeV/u. In addition to our experimental results, many other experimental results are compared with the calculated values by using the model.