Damage of a high-energy solid propellant and its effects on combustion

In order to improve the safety of high-energy solid propellants, a study is carried out for the effects of damage on the combustion of the NEPE (Nitrate Ester Plasticized Polyether) propellant. The study includes: (1) to introduce damage into the propellants by means of a large-scale drop-weight apparatus; (2) to observe microstructural variations of the propellant with a scanning electron microscope (SEM) and then to characterize the damage with density measurements; (3) to investigate thermal decomposition; (4) to carry out closed-bomb tests. The NEPE propellant can be considered as a viscoelastic material. The matrices of damaged samples axe severely degraded, but the particles are not. The results of the thermal decomposition and closed-bomb tests show that the microstructural damage in the propellant affects its decomposition and burn rate.

Energy spectrum of ground state and excitation spectrum of quasi-particle for hard-core boson in optical lattices

We investigate the energy spectrum of ground state and quasi-particle excitation spectrum of hard-core bosons, which behave very much like spinless noninteracting fermions, in optical lattices by means of the perturbation expansion and Bogoliubov approach. The results show that the energy spectrum has a single band structure, and the energy is lower near zero momentum; the excitation spectrum gives corresponding energy gap, and the system is in Mott-insulating state at Tonks limit. The analytic result of energy spectrum is in good agreement with that calculated in terms of Green's function at strong correlation limit.

LD侧面泵浦固体激光器泵浦光分布模拟

利用Gauss光束通过光学系统的变换规律,将激光二极管阵列发出的光作为Gauss光束处理.应用矩阵光学方法,解析分析与数值模拟相结合,给出了激光二极管阵列侧面泵浦棒状固体激光介质内泵浦光的强度分布.比较了侧面环绕激光二极管阵列数量不同时泵浦光分布的均匀性;以及考虑准直系统后,不同准直透镜焦距时,晶体内泵浦光半径的大小;同时针对泵浦光在晶体内聚焦时的情况进行了简单讨论.将半解析法与光线追迹法所得结果进行了比较,二者十分相近,但前者计算要简单得多.

Dynamic analysis of V-folded cavity for TEM00 operation of end-pumped solid-state laser

Based on graphic analysis design method of optical resonator, a simple design expression of V-folded cavity of end-pumped solid-state lasers with TEM00 operation is described, which satisfies two criterias of the resonator design. We give numerical simulation of spot size as a function of thermal focal length using this design approach whose advantages are validated experimentally.

铬镱铒共掺磷酸盐玻璃的激光性质

研究了氙灯抽运脉宽、输出耦合镜的反射率、铒玻璃工作温度以及工作重复频率对铬镱铒共掺磷酸盐玻璃激光输出能量的影响。结果表明, 对于输出能量, 抽运脉宽为2.3 ms(10%最大幅度间)时较好; 综合考虑激光阈值和斜率效率, 输出耦合镜的反射率为85%时较好。此外, 如同大多数激光介质那样, 铬镱铒共掺磷酸盐玻璃的激光输出能量随铒玻璃工作温度的升高和工作重复频率的增加而降低。

Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media

In this review, the potential of mode-locked lasers based on advanced quantum-dot ( QD) active media to generate short optical pulses is analysed. A comprehensive review of experimental and theoretical work on related aspects is provided, including monolithic-cavity mode-locked QD lasers and external-cavity mode-locked QD lasers, as well as mode-locked solid-state and fibre lasers based on QD semiconductor saturable absorber mirrors. Performance comparisons are made for state-of-the-art experiments. Various methods for improving important characteristics of mode-locked pulses such as pulse duration, repetition rate, pulse power, and timing jitter through optimization of device design parameters or mode-locking methods are addressed. In addition, gain switching and self-pulsation of QD lasers are also briefly reviewed, concluding with the summary and prospects.

GaAs absorber grown at low temperature used in passively Q-switched diode pumped solid state laser

We report, for the first time to the best of our knowledge, on a passively Q-switched Nd:YVO4 laser with a GaAs absorber grown at low temperature (LT) by metal organic vapor phase expitaxy. Using the LT GaAs absorber as well as an output coupler, a passively Q-switched laser whose pulse duration is as short as 90 ns, was obtained.

Quantum coherence control of solid-state charge qubit by means of a suboptimal feedback algorithm

The quantum coherence control of a solid-state charge qubit is studied by using a suboptimal continuous feedback algorithm within the Bayesian feedback scheme. For the coherent Rabi oscillation, the present algorithm suggests a simple bang-bang control protocol, in which the control parameter is modulated between two values. For the coherence protection of the idle state, the present approach is applicable to arbitrary states, including those lying on the equator of the Bloch sphere which are out of control in the previous Markovian feedback scheme.

Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated with standard 0.35 mu m CMOS technology. This OEIC circuit consists of light emitting diodes (LED), silicon dioxide waveguide, photodiodes and receiver circuit. The silicon LED operates in reverse breakdown mode and can be turned on at 8.5V 10mA. The silicon dioxide waveguide is composed of multiple layers of silicon dioxide between different metals layers. A two PN-junctions photodetector composed of n-well/p-substrate junction and p(+) active implantation/n-well junction maximizes the depletion region width. The readout circuitry in pixels is exploited to handle as small as 0.1nA photocurrent. Simulation and testing results show that the optical emissions powers are about two orders higher than the low frequency detectivity of silicon CMOS photodetcctor and receiver circuit.

AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD

AlGaN/AlN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structures with improved buffer isolation have been investigated. The structures were grown by MOCVD on sapphire substrate. AFM result of this structure shows a good surface morphology with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu mx5 mu m. A mobility as high as 1950 cm(2)/Vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. Average sheet resistance of 327 Omega/sq was achieved. The HEMTs device using the materials was fabricated, and a maximum drain current density of 718.5 mA/mm, an extrinsic transconductance of 248 mS/mm, a current gain cutoff frequency of 16 GHz and a maximum frequency of oscillation 35 GHz were achieved.

Design of Low Power Multi-Standard Active-RC Filter for WLAN and DVB-H

In this paper, a low-power, highly linear, integrated, active-RC filter exhibiting a multi-standard (IEEE 802.11a/b/g and DVB-H) application and bandwidth (3MHz, 4MHz, 9.5MHz) is present. The filter exploits digitally-controlled polysilicon resister banks and an accurate automatic tuning scheme to account for process and temperature variations. The automatic frequency calibration scheme provides better than 3% corner frequency accuracy. The Butterworth filter is design for receiver (WLAN and DVB-H mode) and transmitter (WLAN mode). The filter dissipation is 3.4 mA in RX mode and 2.3 mA (only for one path) in TX mode from 2.85-V supply. The dissipation of calibration consumes 2mA. The circuit has been fabricated in a 0.35um 47-GHz SiGe BiCMOS technology, the receiver and transmitter occupy 0.28-mm(2) and 0.16-mm(2) (calibration circuit excluded), respectively.

A Fast-Locking Phase-Locked Loop Using a Seven-State Phase Frequency Detector

A seven-state phase frequency detector (S.S PFD) is proposed for fast-locking charge pump based phase-locked loops (CPPLLs) in this paper. The locking time of the PLL can be significantly reduced by using the seven-state PFD to inject more current into the loop filter. In this stage, the bandwidth of the PLL is increased or decreased to track the phase difference of the reference signal and the feedback signal. The proposed architecture is realized in a standard 0.35 mu m 2P4M CMOS process with a 3.3V supply voltage. The locking time of the proposed PLL is 1.102 mu s compared with the 2.347 mu s of the PLL based on continuous-time PFD and the 3.298 mu s of the PLL based on the pass-transistor tri-state PFD. There are 53.05% and 66.59% reductions of the locking time. The simulation results and the comparison with other PLLs demonstrate that the proposed seven-state PFD is effective to reduce locking time.

Design and Verification of the Programming Circuit in an Application-Specific FPGA

In this paper we present a methodology and its implementation for the design and verification of programming circuit used in a family of application-specific FPGAs that share a common architecture. Each member of the family is different either in the types of functional blocks contained or in the number of blocks of each type. The parametrized design methodology is presented here to achieve this goal. Even though our focus is on the programming circuitry that provides the interface between the FPGA core circuit and the external programming hardware, the parametrized design method can be generalized to the design of entire chip for all members in the FPGA family. The method presented here covers the generation of the design RTL files and the support files for synthesis, place-and-route layout and simulations. The proposed method is proven to work smoothly within the complete chip design methodology. We will describe the implementation of this method to the design of the programming circuit in details including the design flow from the behavioral-level design to the final layout as well as the verification. Different package options and different programming modes are included in the description of the design. The circuit design implementation is based on SMIC 0.13-micron CMOS technology.

Simulation and fabrication of the SiC-based clamped-clamped filter

In this paper, the SiC-based clamped-clamped filter was designed and fabricated. The filter was composed of two clamped-clamped beam micromechanical resonators coupled by a spring coupling beam. Structural geometries, including the length and width of the resonator beam and coupling beam, were optimized by simulation for high frequency and high Q, under the material properties of SiC. The vibrating modes for the designed filter structure were analyzed by finite element analysis (FEA) method. For the optimized structure, the geometries of resonator beams and coupling beams, as well as the coupling position, the SiC-based clamped-clamped filter was fabricated by surface micromaching technology.

Electronic states of InAs verfically-assembled quantum disks in magnetic fields and two-electron quantum-disk qubit

We have studied the single-electron and two-electron vertically-assembled quantum disks in an axial magnetic field using the effective mass approximation. The electron interaction is treated accurately by the direct diagonalization of the Hamiltonian matrix. We calculate the six criergy levels of single-electron quantum disks and the two lowest energy levels of two-electron quantum disks in an axial magnetic field. The change of the magnetic field as an effective potential strongly modifies the electronic structures. leading to splittings and crossings between levels The results demonstrate the switching between the around states with the total spins S = 0 and S = 1. The switching results in a qubit allowed to fabricate by current growth techniques.