Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source. Despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 BOX has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(Si), whereas the nitrogen-implanted 3 × 1015 cm-2 BOX has a lower hardness than the control sample. However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (Si)). The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed. In addition, the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.

Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method

于2010-11-23批量导入

A novel high sensitivity CE-PTHPT for optical fiber communication

Planar punch through heterojunction phototransistors with a novel emitter control electrode and ion- implanted isolation (CE-PTHPT) are investigated. The phototransistors have a working voltage of 3-10V and high sensitivity at low input power. The base of the transistor is completely depleted under operating condition. Base current is zero. The CE-PTHPT has an increased speed and a decreased noise. The novel CE-PTHPT has been fabricated in this paper. The optical gain of GaAlAs/GaAs CE-PTHPT for the incident light power 1.3 and 43nw with the wavelength of 0.8 mu m reached 1260 and 8108. The input noise current calculated is 5.46 x 10(-16) A/H-z(1/2). For polysilicon emitter CE-PTHPT, the optical gain is 3083 at the input power of 0.174 mu w. The optical gain of InGaAs/InP CE-PTHPT reaches 350 for an incident power of 0.3 mu w at the wavelength of 1.55 mu m. The CE-PTHPT detectors is promising as photo detectors for optical fiber communication system.

Characteristics of beam profile of Gaussian beam passing through an axicon

Bessel beam can overcome the limitation of the Rayleigh range of Gaussian beam with the same spot size propagation without any spreading due to diffraction, which is considered as an useful function in guiding particles in the next generation of optical tweezers. The mathematical description of the Bessel beam generated by an axicon is usually based on the Fresnel diffraction integral theory. In this paper, we deduce another type of analytic expression suitable for describing the beam profile generated from the axicon illuminated by the Gaussian beam based on the interferential theory. Compared with the Fresnel diffraction integral theory, this theory does not use much approximation in the process of mathematical analysis. According to the derived expression, the beam intensity profiles at any positions behind the axicon can be calculated not just restricted inside the cross region as the Fresnel diffraction integral theory gives. The experiments prove that the theoretical results fit the experimental results very well. (C) 2004 Elsevier B.V. All rights reserved.

Critical Biot's number for Determination of the Sensitivity of Spherical Ceramics to Thermal Shock

A critical Biot number, which determines both the sensitivity of spherical ceramics to quenching and the durations of the temperature-wave propagation and the thermal stresses in the ceramics subjected to thermal shock, is theoretically obtained. The results prove that once the Biot number of a ceramic sphere is greater than the critical number, its thermal shock failure will be such a rapid process that the failure only occurs in the initial regime of heat conduction, whereas the thermal shock failure of the ceramic sphere is uncertain in the course of heat conduction. The presented results provide a guide to the selection of the ceramics applied in the thermostructural engineering with thermal shock.

Sensitivity of the Australian summer monsoon to tilt and precession forcing

IEECAS SKLLQG

A study of the scaling height of the tropospheric aerosol and its extinction coefficient profile

IEECAS SKLLQG