Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks

To overcome the isotropic directional emission of an ideal circular microdisk, two kinds of cylindrical mesa-like InGaAlP single quantum well (SQW) microdisks emitting at a visible red wavelength of 0.66 mu m have been fabricated. An anisotropic luminescence pattern was revealed by the microscopic fluorescence (FL) image. FL intensity, preferentially enhanced with twofold symmetry, appeared at the circumference of the InGaAlP SQW microdisks. Our results demonstrated that anisotropic radiation can be achieved by geometry shaping of the disks on the top view two-dimensional boundary slightly deformed from circular shape and/or on the side-view cross-section of the circular mesa by wet etching anisotropic undercut. (C) 2000 Elsevier Science Ltd. All rights reserved.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

Radiation of dressed excitons in the semiconductor microcavity

In this paper, we introduced the dressed exciton model of the semiconductor micro-cavity device. In the semiconductor micro cavity of vertical-cavity surface-emission device, the excitons first coupled with the cavity through an intra-electromagnetic field and formed the dressed excitons. Then these dressed excitons decayed into the vacuum cavity optical mode, as a multiparticle process. Through the quantum electrodynamics method, the dipole emission density and system energy decayed equation were obtained. And it was predicted that the excitons decay into a very narrow mode when the exciton-cavity coupling becomes strong enough.

New color centers and photostimulated luminescence of BaFCl : Eu2+

Three new absorption bands, appearing around 670, 865 and 980 nm, are observed in BaFCl:Eu2+ phosphors. They are ascribed to F aggregates formed by association of F centers or by trapping of electrons to the primary F-n(+) (n = 2,3,4) centers. The growth curves of F and F-aggregated centers are similar and may be divided into three stages. The photostimulated luminescence (PSL) decays by stimulation into the absorption bands of F centers and of F aggregates are different; the former decay logarithmically and the latter decay hyperbolically. Some non-radiative processes related to F aggregates, such as electron migration, occur accompanying the PSL process, which may reduce the PSL efficiency and sensitivity of the phosphors. (C) 1997 Published by Elsevier Science Ltd. All rights reserved.

Investigation of vertical radiation loss for whispering-gallery modes in 3-D microresonators by FDTD simulation

The vertical radiation loss of three-dimensional (3-D) microresonators is investigated by 3-D finite-difference time-domain (FDTD) simulation. The simulation shows that the vertical radiation causes an important loss in the microresonators with weak waveguiding, and result in decrease of the quality factors (Q-factors) of whispering-gallery (WG) modes. Through the simulation, we find that TM-like modes have much weaker vertical radiation loss than TE-like modes. High Q-factor TM-like modes are observed in the 3-D microresonators with weak vertical waveguiding, but the Q-factors of TE-like modes decrease greatly.

Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides

Charge trapping in the fluorinated SIMOX buried oxides before and after ionizing radiation has been investigated by means of C-V characteristics. Radiation-induced positive charge trapping which results in negative shift of C-V curves can be restrained by implanting fluorine ions into the SIMOX buried oxides. Pre-radiation charge trapping is suppressed in the fluorinated buried oxides. The fluorine dose and post-implantation anneal time play a very important role in the control of charge trapping.

Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers

Ionizing radiation response of partially-depleted MOS transistors fabricated in the, fluorinated SIMOX wafers has been investigated. The experimental data show that the, radiation-induced threshold voltage shift of PMOSFETs and NMOSFETs, as well as the radiation-induced increase of off-state leakage current of NMOSFETs can be restrained by implanting fluorine ions into the buried oxide of SIMOX wafers.

Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model

Applying the model dielectric function method, we have expressed the absorption coefficient of GaSb analytically at room temperature relating to the contribution of various critical points of its electronic band structure. The calculated absorption spectrum shows good agreement with the reported experimental data obtained by spectral ellipsometry on nominally undoped sample. Based on this analytical absorption spectrum, we have qualitatively evaluated the response of active absorbing layer structure and its photoelectric conversion properties of GaSb thermophotovoltaic device on the perturbation of external thermal radiation induced by the varying radiator temperature or emissivity. Our calculation has demonstrated that desirable thickness to achieve the maximum conversion efficiency should be decreased with the increment of radiator temperature and the performance degradation brought by any structure deviation from its optimal one would be stronger meanwhile. For the popular radiator temperature, no more than 1500 K in a real solar thermophotovoltaic system, and typical doping profile in GaSb cell, a reasonable absorbing layer structure parameter should be controlled within 100-300 nm for the emitter while 3000-5000 nm for the base.

On the radiation and diffraction of linear water waves by an infinitely long rectangular structure submerged in oblique seas

The radiation and diffraction of linear water waves by an infinitely long rectangular structure submerged in oblique seas of finite depth is investigated. The analytical expressions for the radiated and diffracted potentials are derived as infinite series by use of the method of separation of variables. The unknown coefficients in the series are determined by the eigenfunction expansion matching method. The expressions for wave forces, hydrodynamic coefficients and reflection and transmission coefficients are given and verified by the boundary element method. Using the present analytical solution, the hydrodynamic influences of the angle of incidence, the submergence, the width and the thickness of the structure on the wave forces, hydrodynamic coefficients, and reflection and transmission coefficients are discussed in detail.

Nonlinear optical properties of semiconductor quantum wells under intense terahertz radiation

The nonlinear optical properties of semiconductor quantum wells driven by intense in-plane terahertz electric fields are investigated theoretically by employing the extended semiconductor Bloch equations. The dynamical Franz-Keldysh effect of the optical absorption near the band edge is analyzed with Coulomb correlation among the carriers included. The in-plane terahertz field induces a variety of behavior in the absorption spectra, including terahertz replicas of the (dark) 2p exciton and terahertz sidebands of the 1s exciton. The dependence of these interesting features on the intensity, frequency, and phase of the terahertz field is explored in detail.

Radiation-matter oscillations in attosecond polarization beats using twin color-locked noisy lights

Based on the phase-conjugate polarization interference between two one-photon processes. When the laser has broadband linewidth, the sum-frequency polarization beat (SFPB) signal shows the autocorrelation of SFPB exhibits hybrid radiation-matter detuning terahertz damping oscillation. As an attosecond ultrafast modulation process, it can be extended intrinsically to any sum-frequency of energy-levels. It hits been also found that the asymmetric behaviors of the polarization beat signals result from the unbalanced dispersion effects, (c) 2005 Elsevier B.V. All rights reserved.

Characteristic of the ultrawideband electromagnetic radiation generated by PCSS

A novel ultra-wideband electromagnetic pulse generating method based on the photoconductive semiconductor switches (PCSS) is presented. Gallium arsenide is used to develop the PCSS for an ultrashort electromagnetic pulse source. The pulse generated by such PCSS is within picosecond (ps) time scale, and can yield power pulse with an voltage over 10 kV. The experimental results show that the pulses are stable, with the peak-peak amplitude change of 6% and the time jitter within several picoseconds. The radiations of the PCSS triggered by the picosecond laser and fenitosecond laser pulse series illustrate that the electromagnetic pulses would have high repetition of more than 80 MHz and frequency bandwidth of DC-6 GHz. The radiations of "lock-on " mode of the PCSS are also analyzed here. (c) 2007 Wiley Periodicals, Inc.

Radiation forces of a highly focused radially polarized beam on spherical particles

A radially polarized beam focused by a high-numerical-aperture (NA) objective has a strong longitudinal and nonpropagating electric field in the focal region, which implies that it is suitable for axial optical trapping. In this paper, we use the vectorial diffraction integral to represent the field distribution of the radially polarized beam focused by a high-NA objective and then employ the T-matrix method to compute the radiation forces on spherical particles. Effects of different parameters, such as the size of the sphere, the inner radius of the radially polarized beam, and the NA of the objective, on the radiation forces are presented.

Magnetoexcitonic optical absorption in semiconductors under strong magnetic fields and intense terahertz radiation in the Voigt configuration

The magnetoexcitonic optical absorption of a GaAs bulk semiconductor driven by a terahertz (THz) field is investigated numerically. The method of the solution of the initial-value problem, in combination with the perfect matched layer technique, is used to calculate the optical susceptibility, with Coulomb interaction, Landau quantization, and THz fields involved nonperturbatively. It shows that there appear replicas and sidebands of magnetoexciton of different Landau levels, which greatly enrich the magneto-optical spectrum in the presence of a driving THz field. Copyright (C) EPLA, 2008.

Excitonic optical absorption in semiconductors under intense terahertz radiation

The excitonic optical absorption of GaAs bulk semiconductors under intense terahertz (THz) radiation is investigated numerically. The method of solving initial-value problems, combined with the perfect matched layer technique, is used to calculate the optical susceptibility. In the presence of a driving THz field, in addition to the usual exciton peaks, 2p replica of the dark 2p exciton and even-THz-photon-sidebands of the main exciton resonance emerge in the continuum above the band edge and below the main exciton resonance. Moreover, to understand the shift of the position of the main exciton peak under intense THz radiation, it is necessary to take into consideration both the dynamical Franz-Keldysh effect and ac Stark effect simultaneously. For moderate frequency fields, the main exciton peak decreases and broadens due to the field-induced ionization of the excitons with THz field increasing. However, for high frequency THz fields, the characteristics of the exciton recur even under very strong THz fields, which accords with the recent experimental results qualitatively.