Nonlinear optical properties of semiconductor quantum wells under intense terahertz radiation


Autoria(s): Zhang, T. Y.; Zhao, W.; Liu, X. M.; Zhang, C.
Data(s)

23/07/2007

Resumo

The nonlinear optical properties of semiconductor quantum wells driven by intense in-plane terahertz electric fields are investigated theoretically by employing the extended semiconductor Bloch equations. The dynamical Franz-Keldysh effect of the optical absorption near the band edge is analyzed with Coulomb correlation among the carriers included. The in-plane terahertz field induces a variety of behavior in the absorption spectra, including terahertz replicas of the (dark) 2p exciton and terahertz sidebands of the 1s exciton. The dependence of these interesting features on the intensity, frequency, and phase of the terahertz field is explored in detail.

Identificador

http://ir.opt.ac.cn/handle/181661/6440

http://www.irgrid.ac.cn/handle/1471x/70372

Idioma(s)

英语

Palavras-Chave #数理科学和化学
Tipo

期刊论文