钛宝石强激光负载的有机硅复合凝胶增透膜研究

以硅酸四乙酯(TEOS)和甲基三乙氧基硅烷(MTEOS)为前驱材料，用溶胶-凝胶(sol-gel)方法在钛宝石表面制备得到均匀性良好且具有高激光损伤阈值的有机硅复合凝胶增透膜。膜层在钛宝石激光器输出波段(750～850nm)的增透效果显著，其平均透过率超过98．6％；激光破坏阈值为2．2J／cm^2(800nm，300ps)；膜层表面均匀性达到激光波面的要求，在皮秒、飞秒超短脉冲高功率激光领域具有应用价值。溶胶的性能测试结果表明，溶胶粘度和成膜折射率均随溶液中CH3SiO1.5溶胶体含量的增加而增大，而膜

Modified porous silica antireflective coatings with laser damage resistance for Ti:sapphire

Porous SiO2 antireflective (AR) coatings are prepared from the colloidal silica solution modified with methyltriethoxysilane (MTES) based on the sol-gel route. The viscosity of modified silica suspensions changes but their stability keeps when MTES is introduced. The refractive indices of modified coatings vary little after bake treatment from 100 to 150 Celsius. The modified silica coatings on Ti:sapphire crystal, owning good homogeneity, display prominent antireflective effect within the laser output waveband (750-850 nm) of Ti:sapphire lasers, with average transmission above 98.6%, and own laser induced damage thresholds (LIDTs) of more than 2.2 J/cm2 at 800 nm with the pulse duration of 300 ps.

Design and analysis of a kind of large flattened mode optical fibre

In this paper, a refractive index pro. le design enabling us to obtain a. at modal field around the fibre centre is investigated. The theoretical approach for designing such multilayer large flattened mode (LFM) optical fibres is presented. A comparison is made between the properties of a three-layer LFM structure and a standard step-index pro. le with the same core size. The obtained results indicate that the effective area of the LFM fibre is about twice as large as that of the standard step-index fibre, but the LFM fibre has less effective ability to filter out the higher order modes than the standard step-index fibre with the same bending radius.

掺稀土离子液体激光器的研究进展

综合介绍了掺稀土离子液体激光器的主要发展历程，分析了掺稀土离子液体激光材料研究过程中需要解决的主要问题包括降低无辐射跃迁、增大溶解度和减少热致折射率梯度引起的光偏折损耗等。重点介绍了稀土离子在溶液中的无辐射跃迁机理以及降低无辐射跃迁的措施。

高激光损伤阈值溶胶-凝胶ZrO2薄膜

采用醇热法水解氧氯化锆（ZrOCl2·8H2O）制备ZrO2溶胶，提拉法涂膜。采用粘度、粒度分布、折射率、IR、DSC、AFM等测试手段对溶胶和薄膜性能进行表征。结果表明，ZrO2溶胶颗粒的平均粒径为18．9nm，薄膜经300℃热处理后折射率可高达1．95，膜层表面均匀平整，表面平均粗糙度仅为0．561nm，膜层的激光损伤阈值为14J／cm^2（1064nm，1ns）。

锥形光纤的功率分布特性

从波动理论出发,对锥形光纤的纵向传播常数进行泰勒(Taylor)级数展开,经近似得到了锥形光纤功率分布的解。基于此理论,对锥形光纤的功率分布特性进行了讨论,并分析了锥形光纤的长度、锥度和光纤折射率等参数对锥形光纤不同模式功率分布的影响。为了减小功率泄漏,当光从锥形光纤大端入射时,应当减小锥长,减小锥度,增大纤芯包层折射率差;当光从锥形光纤小端入射时,应当增加锥长,增加锥度,增大纤芯包层折射率差。在长锥长、大锥度情况下,光纤折射率分布的影响相对较小。

Field enhancement and power distribution characteristics of subwavelength-diameter terahertz hollow optical fiber

Fields in subwavelength-diameter terahertz hollow optical fiber (STHOF) can be intensified by large discontinuity of the electric field at high index contrast interfaces. The influences of fiber geometry and refractive index of the dielectric region on the fiber characteristics, such as power distribution, enhancement factor, have been discussed in detail. By appropriate design, the intensity in the central region of STHOF may be enhanced by a factor of greater than 1.5 compared with subwavelength-diameter terahertz fiber without the central hole and the loss can be reduced. For its compact structure and simple fabrication process, the fiber may be very useful in many miniaturized high performance and novel terahertz photonic devices. (c) 2007 Elsevier B.V. All rights reserved.

复折射率光纤传输特性分析的Davidenko方法

增益或损耗对光纤的传输特性影响很大。使用Davidenko方法对复折射率光纤的传输特性进行了分析。研究了复折射率纤芯或复折射率包层阶跃光纤,通过比较发现,使用Davidenko方法得到的解与精确解符合得很好。对于芯区为复折射介质的光纤,HE11模与LP01模增益值偏差约为0.6%;对于包层区为复折射率介质的光纤,HE11模与LP01模增益值偏差约为2%。实际研究工作中,为了得到更精确的结果,应该求解全矢量的复本征方程,尤其是包层具有增益或损耗的光纤。

Nonlinear response and optical limiting in SrBi2Ta2O9 thin films

SrBi2Ta2O9 (SBT) thin films on quartz substrates were prepared by use of the pulsed-laser deposition technique. The nonlinear refractive indices, n(2), Of the SBT films were measured by use of z-scan techniques with picosecond pulses. Large negative nonlinear refractive indices of 3.84 and 3.58 cm(2)/GW were obtained for the wavelengths 532 nm and 1.064 mum, respectively. The two-photon absorption coefficient was determined to be 7.3 cm/GW for 532 nm. The limiting behavior of SBT thin film on a quartz substrate was investigated in an f/5 defocusing geometry by use of 38-ps-duration, 532-nm, 1.064-mum. laser excitation. (C) 2001 Optical Society of America.

Simulation of an apodizer's effect for high-density optical storage

The effect of an apodizer with two parallel taper refractive surfaces is theoretically investigated for high-density optical storage. The apodizer may modulate an incident Gaussian beam into an annular beam. Simulation shows that with the increasing inner radius of the modulated beam, the focal spot shrinks obviously. The depolarization effect gets strong simultaneously, which induces the circular symmetry loss of the focal spot. In this process, pattern density of the orthogonal and longitudinal diffractive fields increases remarkably.

Optical properties and structure of Sb-rich AgInSbTe phase change thin films

A new composition content quaternary-alloy-based phase change thin film, Sb-rich AgInSbTe, has been prepared by DC-magnetron sputtering on a K9 glass substrate. After the film has been subsequently annealed at 200degreesC for 30 min, it becomes a crystalline thin film. The diffraction peak of antimony (Sb) are observed by shallow (0.5 degree) x-ray diffraction in the quaternary alloy thin film. The analyses of the measurement from differential scanning calorimetry (DSC) show that the crystallization temperature of the phase change thin film is about 190degreesC and increases with the heating rate. By Kissinger plot, the activation energy for crystallization is determined to be 3.05eV. The reflectivity, refractive index and extinction coefficient of the crystalline and amorphous phase change thin films are presented. The optical absorption coefficient of the phase change thin films as a function of photon energy is obtained from the extinction coefficient. The optical band gaps of the amorphous and crystallization phase change thin films are 0.265eV and 1.127eV, respectively.

Optical recording properties of metal-azo dye as recording medium with super-resolution near-field structure

A novel metallized azo dye has been synthesized. The absorption spectra of the thin film and thermal characteristic are measured. Static optical recording properties with and without the Bi mask layer super-resolution near-field structure (Super-RENS) of the metal-azo dye are investigated. The results show that the metal-azo dye film has a broad absorbance band in the region of 450-650 nm and the maximum absorbance wavelength is located at 603 nm. It is also found that the new metallized azo dye occupies excellent thermal stability, initiatory decomposition temperature is at 270 degrees C and the mass loss is about 48% in a narrow temperature region (15 degrees C). The complex refractive index N (N = n + ik) is measured. High refractive index (n = 2.45) and low extinction coefficient (k = 0.2) at the recording wavelength 650nm are attained. Static optical recording tests with and without Super-RENS are carried out using a 650nm semiconductor diode laser with recording power of 7mW and laser pulse duration of 200ns. The AFM images show that the diameter of recording mark on the dye film with the Bi mask layer is reduced about 42%, compared to that of recorded mark on the dye film without Super-RENS. It is indicated that Bi can well performed as a mask layer of the dye recording layer and the metallized azo dye can be a promising candidate for recording media with the super-resolution near-field structure.

Rigorous transmittance analysis of a sub-wavelength Sb thin film lens

We quantitatively analysed the factors contributing to the optical transmission enhancement of a sub-wavelength Sb thin film lens, using the finite-difference time-domain (FDTD) method. The results show that the transmission enhancement of the dielectric with a Gaussian distributed refractive index loaded in a sub-wavelength circular hole is not only due to the high refractive index dielectric, but also due to the specific distributions of refractive index. It is the first study about the effects of the refractive index distribution on the transmission of a sub-wavelength aperture. This kind of lens has practical applications in the very small aperture lasers and for near-field optical storage and lithography.

Super-resolution with a nonlinear thin film: Beam reshaping via internal multi-interference

In laser applications, the size of the focus spot can be reduced beyond the diffraction limit with a thin film of strong nonlinear optical Kerr effect. We present a concise theoretical simulation of the device. The origin of the super-resolution is found to be mainly from the reshaping effect due to the strongly nonlinear refraction mediated multi-interference inside the thin film. In addition, both diffraction and self-focusing effects have been explored and found negligible for highly refractive and ultrathin films in comparison with the reshaping effect. Finally, the theoretic model has been verified in experiments with single Ge2Sb2Te5 film and SiN/Si/SiN/Ge2Sb2Te2 multilayer structures. (c) 2006 American Institute of Physics.

Optical parameters and absorption of copper (II)-azo complexes thin films as optical recording media

Smooth thin films of three kinds of azo dyes of 2-(5'-tert-butyl-3'-azoxylisoxazole)-1, 3-diketones and their copper (II)-azo complexes were prepared by the spin-coating method. Absorption spectra of the thin films on a glass substrate in the 300-600 nm wavelength region were measured. Optical constants (complex refractive index N=n+ik) and thickness of the thin films prepared on single-crystal silicon substrate in the 300-600 nm wavelength region were investigated on rotating analyzer-polarizer type of scanning ellipsometer, and dielectric constants epsilon(epsilon=epsilon(1)+i epsilon(2)), absorption coefficients alpha as well as reflectance R of thin films were then calculated. In addition, one of the copper (II)-azo complex thin film prepared on glass substrate with an Ag reflective layer was also studied by atomic force microscopy (AFM) and static optical recording. AFM study shows that the copper (II)-azo complex thin film is very smooth and has a root mean square surface roughness of 1.89 nm. Static optical recording shows that the recording marks on the copper (II)-azo complex thin film are very clear and circular, and the size of the minimal recording marks can reach 200 nm. (c) 2004 Elsevier B.V. All rights reserved.