Nonlinear response and optical limiting in SrBi2Ta2O9 thin films

SrBi2Ta2O9 (SBT) thin films on quartz substrates were prepared by use of the pulsed-laser deposition technique. The nonlinear refractive indices, n(2), Of the SBT films were measured by use of z-scan techniques with picosecond pulses. Large negative nonlinear refractive indices of 3.84 and 3.58 cm(2)/GW were obtained for the wavelengths 532 nm and 1.064 mum, respectively. The two-photon absorption coefficient was determined to be 7.3 cm/GW for 532 nm. The limiting behavior of SBT thin film on a quartz substrate was investigated in an f/5 defocusing geometry by use of 38-ps-duration, 532-nm, 1.064-mum. laser excitation. (C) 2001 Optical Society of America.

Comment on: Computation of the optical trapping force using an FDTD based technique

In this comment, problems associated with an oversimplified FDTD based model used for trapping force calculation in recent papers "Computation of the optical trapping force using an FDTD based technique" [Opt. Express 13, 3707 (2005)], and "Rigorous time domain simulation of momentum transfer between light and microscopic particles in optical trapping" [Opt. Express 12, 2220 (2004)] are discussed. A more rigorous model using in Poynting vector is also presented.

A large-area photolithography technique based on surface plasmons leakage modes

An atomic force microscope (AFM) assisted surface plasmons leakage radiation photolithography technique has been numerically demonstrated by using two-dimensional finite-difference time-domain (2D-FDTD) method. With the aid of a metallic AFM tip, particular characteristic of the Kretstchmann configuration to excite surface plasmons (SPs) is utilized to achieve large-area patterns with high spatial resolution and contrast, the photoresist could be exposed with low power laser due to the remarkable local field enhancement at the metal/dielectric interface and the resonant localized SPs modes near the tip. Good tolerance on the film thickness and incident angle has been obtained, which provides a good practicability for experiments. This photolithography technique proposed here can realize large-area, high-resolution, high-contrast, nondestructive, arbitrary-structure fabrication of nanoscale devices. (c) 2007 Elsevier B.V. All rights reserved.

用于机载激光测深系统的时间间隔测量模块

机载海洋激光测深系统不仅要求精确测量激光从海表的入射点到海底目标点之间的距离，还要精确测定飞机到海表入射，点之间的距离，为水深数据的海浪校正而确定平均海平面以及波高。为此设计和研制了一高精度时间间隔测量器，该单元基于专用时间数字转换芯片开发，采用延迟线插入法技术，双通道工作，具有高时间分辨率(最高可达250ps)和高测量重复率的特性。给出硬件和软件设计方法以及单元的测试结果。

133-W pulsed fiber amplifier with large-mode-area fiber

A master-oscillator fiber power amplifier (MOPA) system with a 4-m-long Yb3+-doped homemade large mode area (LMA) double-clad fiber is reported. The system emits up to 133.8 W of amplified radiation at a wavelength of 1064 nm and a repetition rate of 100 kHz, limited only by the available pump power. Peak power of 300 kW at 20 kHz with a pulse duration of 15 ns is obtained. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

133-W pulsed fiber amplifier with large-mode-area fiber

A master-oscillator fiber power amplifier (MOPA) system with a 4-m-long Yb3+-doped homemade large mode area (LMA) double-clad fiber is reported. The system emits up to 133.8 W of amplified radiation at a wavelength of 1064 nm and a repetition rate of 100 kHz, limited only by the available pump power. Peak power of 300 kW at 20 kHz with a pulse duration of 15 ns is obtained. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

Focal shift in focused radially polarized ultrashort pulsed laser beams

Beginning with a beam coherence polarization (BCP) matrix, we obtain an analytical intensity expression for radially polarized ultrashort pulsed laser beams that pass through an apertureless aplanatic lens. We also investigate the intensity distribution of radially polarized beams in the vicinity of the focus. The focal shift of these beams is studied in detail. The focal shift depends strongly on Z(F) that coincides with pi times the Fresnel number. (c) 2007 Optical Society of America.

Radially polarized and pulsed output from passively Q-switched Nd:YAG ceramic microchip laser

For the first time, to the best of our knowledge, a radially polarized laser pulse was produced from a passively Q-switched Nd:YAG ceramic microchip laser with a piece of Cr4+:YAG crystal as the saturable absorber and multilayer concentric subwavelength grating as the polarization-selective output coupler. The averaged laser power reached 450 mW with a slope efficiency of 30.2%. The laser pulse had a maximum peak power of 759 W, a minimum pulse duration of 86 ns, and a 6.7 kHz repetition rate at 3.7 W absorbed pump power. The polarization degree of the radially polarized pulse was measured to be as high as 97.4%. Such a radially polarized laser pulse with a high peak power and a short width is important to numerous applications such as metal cutting. (C) 2008 Optical Society of America

Generation of 1.5-12 ns width-tunable 532 nm pulses by adopting laser-induced plasma shutter technique

The pulse-shaping technique has found widespread applications in nonlinear optics and material processing. Experimental research on laser-induced plasma shutter to control the 532 nm pulse width is conducted. The impacts of the total pulse output energy on pulse compression are investigated, and a useful conclusion can be drawn that there exists an optimal value of pulse energy at which the shortest output pulse of 3.23 ns can be obtained without a device for delay-time. Once the device for delay-time is employed to change the optical differences between two laser paths, the pulse width can be further shortened to 1.51 ns. In short, the 1.5-12 ns width-tunable 532 nm laser pulses have been obtained by adopting the laser-induced plasma shutter technique. (C) 2007 Elsevier GmbH. All rights reserved.

Effects of annealing on the color, absorption spectra, and light yield of Ce : YAlO3 single crystal grown by the temperature gradient technique

YAlO3 single crystal doped with Ce3+ at concentration 1% was grown by the temperature gradient technique. The as-grown crystal was pink. After H-2 annealing or air annealing at 1400degreesC for 20 h, the crystal was turned into colorless. We concluded there were two kinds of color centers in the as-grown crystal. One is F+ center attributed to absorption band peaking at about 530 nm, the other is O- center attributed to absorption band peaking at about 390 nm. This color centers model can be applied in explaining the experiment phenomena including the color changes, the absorption spectra changes, and the light yield changes of Ce:YAP crystals before and after annealing. (C) 2004 American Institute of Physics.

Growth, characterization and optical quality of CaF2 single crystals grown by the temperature gradient technique

The CaF2 single crystals with diameters up to 200 mm were successfully grown by modified temperature gradient technique (TGT), which are suitable for application as optical elements in the ultraviolet range. The optimizations of various growth parameters were systematically studied. Properties of as-grown CaF2 crystals were characterized by the nature of inclusions, dislocations, crystallinity, and impurities contents. The results showed that the dislocations and multinucleation were mostly constrained in the conical part of the crystals with the cylindrical parts having the best crystalline quality and lowest impurity contents. The high optical quality of TGT-grown CaF2 single crystals was also confirmed to have excellent optical transmission in 190-2500 nm and refractive index homogeneity. (c) 2005 Elsevier Ltd. All rights reserved.