187 resultados para High power fiber laser


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High-power strain-compensated In1-xGaxAs/ln(1-y)Al(y)As quantum cascade lasers (lambda similar to 5.5 mu m) are demonstrated. Peak power at least 1.2W per facet for a 32 mu mx2mm uncoated laser stored in ambient condition for 240 days, is obtained at 80 K. Considering the collection efficiency of 60%, the actual output power is 4W at this temperature.

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Pulses of 177 fs and 1035 nm, with average power of 1.2 mW, have been generated directly from a passively mode-locked Yb-doped figure-of-eight fiber laser, with a nonlinear optical loop mirror for mode-locking and pairs of diffraction gratings for intracavity dispersion compensation. To our knowledge, these are the shortest pulses ever to come from a passively mode-locked Yb-doped figure-of-eight fiber laser. This represents a 5-fold reduction in pulse duration compared with that of previously reported passively mode-locked Yb-doped figure-of-eight fiber lasers. Stable pulse trains are produced at the fundamental repetition rate of the resonator, 24.0 MHz. (c) 2007 Elsevier B.V. All rights reserved.

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A cladding-pumped ytterbium-doped fiber laser is described in this letter. Using unusual pumping source with 915-nm wavelength, slope efficiency up to 75% with respect to absorbed input power and output power is obtained, a maximum output power of 4.006 W with fundamental mode is measured.

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Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

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In this paper, the dynamic behaviors of several kinds of high strength fibers, including Kevlar, UHMPE, glass fibers, carbon fibers etc., are investigated experimentally, with a Split Hopkinson Tension Bar (SHTB). The effect of strain rate on the modulus, strength, failure strain and failure characteristics of fibers, under impact loading, is analyzed with the relative stress vs. strain curves. At the same time, the mechanism about the rate dependence of mechanical behaviors of various fibers is discussed based on the understanding on the microstructures and deformation models of materials. Some comments are also presented on the decentralization of experimental results, and a new method called traveling wave method is presented to increase the experimental accuracy. Research results obtained in this paper will benefit to understand the energy absorption and to build up the constitutive law of protective materials reinforced by high strength fibers.

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半导体激光器阵列的应用已基本覆盖了整个光电子领域,成为当今光电子科学的重要技术。本文介绍了半导体激光器阵列的发展及其应用。着重阐述了半导体激光器阵列的封装技术——热沉材料的选择及其结构优化、热沉与半导体激光器阵列之间的焊接技术、半导体激光器阵列的冷却技术、与光纤的耦合技术等。

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Repetition rate fluctuation is one of the main drawbacks of the low-threshold stimulated Brillouin scattering (SBS) Q-switched fiber laser. A method to stabilize the repetition rate is proposed in this paper by injecting a square-wave modulated light. It is measured experimentally that variance of the repetition rate can be improved from similar to 20% to similar to 1% of the period. It is also found that effectiveness of the method depends on modulation frequency and duty cycle of the injection. Its working mechanism is analyzed qualitatively. (C) 2009 Optical Society of America

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尽管双包层光纤激光器的散热性能好于传统的固体激光器的散热性能,光纤激光器中的热沉积仍然是限制提高其输出功率的重要因素.以双端抽运的400W双包层光纤激光器为实例,定量分析了光纤内的热沉积分布.根据所建立的散热模型,为了确保千瓦级双包层光纤激光器安全稳定的运行,抽运端附近的对流换热系数应大于2.8×10-2W·cm-2K-1.据此设计出高功率双包层光纤激光器抽运端冷却装置并成功应用在激光系统中,获得了千瓦级的激光输出.

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A novel acousto-optic switch operation by a simple laser-diode pumped acousto-optic, Q-switched, ytterbium-doped, double-clad fiber laser is reported. Stable compressed Q-switched sub-40 ns pulses with a beam quality factor (M-2 = 2) are achieved at the repetition rate of 1-50 kHz. Q-switched pulses of similar to 20 mu J pulse energy and 35 as pulse width are obtained at the repetition rate of 50 kHz. Finally, a reasonable explanation of the novel Q-switched operation is presented. (c) 2007 Optical Society of America.