Optical properties of transparent alkali gallium silicate glass-ceramics containing Ni2+-doped beta-Ga2O3 nanocrystals

Broadband near-infrared (IR) luminescence in transparent alkali gallium silicate glass-ceramics containing N2+-doped beta-Ga2O3 nanocrystals was observed. This broadband emission could be attributed to the T-3(2g) (F-3) -> (3)A(2g) (F-3) transition of octahedral Ni2+ ions in glass-ceramics. The full width at half-maximum (FWHM) of the near-IR luminescence and fluorescent lifetime of the glass-ceramic doped with 0.10 mol% NiO were 260 nm and similar to 1220 mu s, respectively. It is expected that transparent Ni2+-doped beta-Ga2O3 glass-ceramics with this broad near-IR emission and long fluorescent lifetime have potential applications as super-broadband optical amplification media.

Visible luminescence in Yb3+-doped gadolinium gallium garnets

In this paper, some results on visible luminescence performed on Yb3+-doped gadolinium gallium garnets under 165 and 940 nm excitation were presented. The upconversion luminescence was ascribed to Yb3+ cooperative luminescence and the presence of rare earth impurity ions. The gain cross-sections of Yb:GGG crystal as a function of excited-state population fraction P were studied. Emission spectra under 165 nm at 20 K showed there was no charge transfer luminescence in Yb:GGG. (c) 2006 Elsevier B.V. All rights reserved.

Growth of high quality Cr, Yb codoped gadolinium gallium garnet (Gd3Ga5O12) crystal and its spectral properties

The Cr(0.1%),Yb(10%):GGG crystals have been grown by the Czochralski method. The chemical composition is: Yb0.33Gd2.47Cr0.005Ga5.2O12. There are no observed Yb3+ ions substituting Ga3+ ions, just like that of Yb:GGG crystals. The defects in Cr,Yb:GGG crystal were also investigated. The absorption and emission spectra of Cr,Yb:GGG crystal at room temperature have been measured. The 02 and H-2 annealing effect of Cr,Yb:GGG crystal have been compared. Cr3+ can greatly weak the visible luminescence of this crystal. The Cr-Yb-codoped crystals may be potential materials for compact, efficient, high stability LD pumped solid state lasers. (C) 2006 Elsevier B.V. All rights reserved.

GaAs/AlGaAs MQW材料激子吸收谱的电场效应及pin结构自电光效应器件（SEED)的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

利用分子束外延研究GaAs半导体NEA光电发射材料

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si-GaAs的电学补偿机理及微区均匀性对电子迁移率的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

分子束外延Inx-xAs/GaAs失配异质结材料及其性能研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs/GaAlAs短周期超晶格中的Wannier-Stark效应

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si-GaAs中El2的光淬灭效应及有关深能级行为的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

分子束外延GaAs/GaP失配异质结材料及其性能研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

LEC半绝缘GaAs中EL2缺陷的亚稳性和光恢复效应与深能级缺陷的性质

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z