Violet/blue emission from hydrogenated amorphous carbon films deposited from energetic CH3+ ions and ion bombardment

Considering the complexity of the general plasma techniques, pure single CH3+ ion beams were selected for the deposition of hydrogenated amorphous (a) carbon films with various ion energies and temperatures. Photoluminescence (PL) measurements have been performed on the films and violet/blue emission has been observed. The violet/blue emission is attributed to the small size distribution of sp(2) clusters and is related to the intrinsic properties of CH3 terminals, which lead to a very high barrier for the photoexcited electrons. Ion bombardment plays an important role in the PL behavior. This would provide further insight into the growth dynamics of a-C:H films. (C) 2002 American Institute of Physics.

Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2)

The hydrogenated amorphous SiOx films (a-SiOx:H) with various oxygen contents have been prepared using plasma enhanced chemical vapor deposition technique. The films were implanted with erbium and annealed by rapid thermal annealing. An intense photoluminescence (PL) of Er at 1.54 mum has been observed at 77 K and at room temperature. The PL intensity depends strongly on both the oxygen content of the film and the rapid thermal annealing temperature and reaches its maximum if the ratio of O/Si in the film is approximately equal to 1.0 at 77 K and to 1.76 at room temperature. The microstructure of the film also has strong influences on the PL intensity. The PL intensity at 250 K is slightly more than a half of that at 15 K. It means that the temperature quenching effect of the PL intensity is very weak.

1.5 mu m luminescence characteristic of erbium in B, P doped a-SiO : H films

Hydrogenated amorphous silicon films co-doped with oxygen (O), boron (B) and phosphorus (P) were fabricated using PECVD technique. The erbium (Er) implanted samples were annealed in a N-2 ambient by rapid thermal annealing. Strong photoluminescence (PL) spectra of these samples were observed at room temperature. The incorporation of O, B and P could not only enhance the PL intensity but also the thermal annealing temperature of the strongest PL intensity. It seems that the incorporation of B or P can decrease the grain boundary potential barriers thus leading to an easier movement of carriers and a stronger PL intensity. Temperature dependence of PL indicated the thermal quenching of Er-doped hydrogenated amorphous silicon is very weak.

High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers

In this paper, we reported on the fabrication of 980 nm InGaAs/InGaAsP strained quantum-well (QW) lasers with broad waveguide. The laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n(+)- GaAs substrate. For 3 mu m stripe ridge waveguide lasers, the threshold current is 30 mA and the maximum output power and the output power operating in fundamental mode are 350 mW and 200 mW, respectively. The output power from the single mode fiber is up to 100 mW, the coupling efficiency is 50%. We also fabricated 100 mu m broad stripe coated lasers with cavity length of 800 mu m, a threshold current density of 170 A/cm(2), a high slope efficiency of 1.03 W/A and a far-field pattern of 40 x 6 degrees are obtained. The maximum output power of 3.5 W is also obtained for 100 mu m wide coated lasers. (C) 2000 Elsevier Science B.V. All rights reserved.

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

Stress corrosion studies of ion implanted austenitic steel

Stress corrosion studies of 50 Mn18Cr4 austenitic steel implanted with 120 keV N+, 100 keV Cr+, 200 keV and 400 keV Er+ ions were carried out by constant strain method in the nitrate solution. Surface composition and depth profiles of the implanted material were measured by AES sputter etching technique. The results exhibit that nitrogen implantation has no significant affection to the stress corrosion, but the chromium and erbium implantation has prolonged the incubation period of the stress corrosion cracking. (C) 1999 Kluwer Academic Publishers.

Intense room temperature near infrared emission from Al (3+) and Yb3+ ions

Intense near infrared emission was observed from Al3+ and Yb3+ ions co-implanted SiO2 film on silicon. It was found that the addition of Al3+ ions could remarkably improve the photoluminescence efficiency of Yb3+-implanted SiO2 film. No excitation power saturation was observed and trivial temperature quenching factor of 2 was achieved.

Four-wave mixing self-stability based on photonic crystal fiber and its applications on erbium-doped fiber lasers

The analytic solutions of coupled-mode equations of four-wave mixings (FWMs) are achieved by means of the undepleted approximation and the perturbation method. The self-stability mechanism of the FWM processes is theoretically proved and is applicable to design a new kind of triple-wavelength erbium-doped fiber lasers. The proposed fiber lasers with excellent stability and uniformity are demonstrated by using a flat-near-zero-dispersion high-nonlinear photonic-crystal-fiber. The significant excellence is analyzed in theory and is proved in experiment. Our fiber lasers can stably lase three waves with the power ripple of less than 0.4 dB. (c) 2005 Elsevier B.V. All rights reserved.

A dual-wavelength sampled fiber Bragg grating and its application in L-band dual-wavelength erbium-doped fiber lasers

A novel dual-wavelength (DW) sampled fiber Bragg grating (SFBG) is proposed and demonstrated for the first time to the author's best knowledge. This kind of SFBG can realize a DW operation with uniform reflection peaks rather than multiple nonuniform peaks shown in conventional SFBGs. Based on the designed SFBG, we have proposed a novel L-band DW erbium-doped fiber laser, which has such a unique merit that the spacing of the two wavelengths keeps unchanged during tuning laser.

Multi-wavelength erbium-doped fibre lasers on assistance of high-nonlinear photonic-crystal fibres

On the basis of self-stability effect of four-wave mixings (FWMs) in high-nonlinear photonic-crystal fibres, a novel multi-wavelength erbium-doped fibre (EDF) laser is proposed and demonstrated experimentally at room temperature. The proposed lasers have the capacity of switching and tuning with excellent uniformity and stability. By means of adjusting the attenuators, the triple-, four-, or five-wavelength EDF lasers can be lasing simultaneously. With the assistance of the FWM self-stability function, the multi-wavelength spectrum is excellently stabilized with uniformity less than 0.9 dB.

Room-temperature dual-wavelength erbium-doped fibre laser based on a sampled fibre Bragg grating and a photonic Robin Hood

With the assistance of a kind of photonic Robin Hood that is originated from four-wave mixing in a dispersion-flattened high-nonlinearity photonic-crystal fibre, a novel dual-wavelength erbium-doped fibre (EDF) laser is proposed and demonstrated by using a sampled fibre Bragg grating. The experiments show that, due to the contribution of the photonic Robin Hood, the proposed fibre laser has the advantage of excellent uniformity, high stability and stable operation at room temperature. Our dual-wavelength EDF laser has the unique merit that the wavelength spacing remains unchanged when tuning the two wavelengths of laser, and this laser is simpler and more stable than the laser reported by Liu et al. [Opt. Express, 13 142 (2005)].

Broad-spectrum and long-lifetime emissions of Nd3+ ions in lead fluorosilicate glass

A novel Nd3+-doped lead fluorosilicate glass (NPS glass) is prepared by a two-step melting process. Based on the absorption spectrum a Judd-Ofelt theory analysis is made. The emission line width of NPS glass is 44.2nm. The fluorescence decay lifetime of the 4F3/2 level is 586±20μsec, and the stimulated emission cross-section is 0.87×10-20cm2 at 1056nm. A laser oscillation is occurred at 1062nm when pumped by 808nm Diode Laser. The slope efficiency is 23.7% with a 415mJ threshold. It is supposed that NPS glass is a good candidate for using in ultra-short pulse generation and amplification by the broad emission bandwidth and long fluorescence lifetime.