1.5 mu m luminescence characteristic of erbium in B, P doped a-SiO : H films
Data(s) |
2000
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Resumo |
Hydrogenated amorphous silicon films co-doped with oxygen (O), boron (B) and phosphorus (P) were fabricated using PECVD technique. The erbium (Er) implanted samples were annealed in a N-2 ambient by rapid thermal annealing. Strong photoluminescence (PL) spectra of these samples were observed at room temperature. The incorporation of O, B and P could not only enhance the PL intensity but also the thermal annealing temperature of the strongest PL intensity. It seems that the incorporation of B or P can decrease the grain boundary potential barriers thus leading to an easier movement of carriers and a stronger PL intensity. Temperature dependence of PL indicated the thermal quenching of Er-doped hydrogenated amorphous silicon is very weak. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Liang JJ; Chen WD; Wang YQ; Chang Y; Wang ZG .1.5 mu m luminescence characteristic of erbium in B, P doped a-SiO : H films ,CHINESE PHYSICS,2000,9(10):783-786 |
Palavras-Chave | #半导体物理 #erbium #photoluminescence #a-SiO : H #boron and phosphorus co-doping #CRYSTALLINE SI #SILICON #ELECTROLUMINESCENCE #ER |
Tipo |
期刊论文 |