180 resultados para 313-M0029A


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A new unsymmetrical photochromic diarylethene 1a is synthesized, and the photochromic properties of it are also investigated. The compound exhibits good photochromism with UV/ visible light irradiation. Compound 1a in polymethyl methacrylate ( PMMA ) film changes color upon 313- nm light irradiation from colorless to blue, in which the absorption maximum is observed at 587 nm. Photon- mode polarization multiplexing holographic optical recording is performed successfully using this compound as a recording medium. In the diarylethene 1b/ PMMA film, polarization multiplexing hologram recording and retrieval, and a combination with the angular multiplexing scheme, are demonstrated systematically. The results indicate that recording capacity can be significantly improved with the combined method of polarization and angular multiplexing holographic recording. (C) 2008 Society of Photo- Optical Instrumentation Engineers.

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采用野外样线取样与室内萌发相结合的方法研究了黄土高原丘陵沟壑区退耕地种子库的组成、密度、分布特征、季节动态、种子库类型。结果表明,土壤种子库中共发现50种植物的种子,隶属15个科,39个属,主要物种组成与密度季节间差异不显著;在演替过程中土壤种子库的物种数量与密度随退耕年限的增加表现出:增加-减少-增加的趋势,同时阳坡种子库密度波动较阴坡剧烈;土壤种子库密度年内变化范围为1 067~14 717粒/m2,土壤种子库平均密度是夏季>秋季>春季;研究区域退耕地土壤种子库类型属于以猪毛蒿为优势种,并具有其他一年生、多年生草本植物与灌丛种子的没有显著的季节动态的持久种子库,是物种适应黄土丘陵沟壑区特有生态环境条件的繁殖更新策略;从土壤种子库的物种组成、密度、类型来看,黄土丘陵沟壑区退耕地具有一定的自然恢复潜力。

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Neutron transmutation doped (NTD) silicon crystals grown in a hydrogen atmosphere have been investigated by infrared absorption spectroscopy at a low temperature (10 K). An effective-mass-like donor state HD0/+ has been found at 110.8 me V below the conduction band bottom after rapid thermal annealing (RTA). The HD0/+ formation mechanism after NTD and RTA is briefly discussed, and tentatively attributed to H atoms present in the vicinity of some residual irradiation defects, like a complex of a H atom and a H-saturated vacancy.

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A GaAs/GaAlAs graded-index separate confinement single quantum well heterostructure single-mode ridge waveguide electroabsorption modulator was fabricated and investigated. For the modulator with a quantum well width of 100 angstrom and device length of 700-mu-m, an on/off ratio of 29.7 dB and estimated absorption insertion loss of 3 dB were obtained for TE polarised light with wavelength 8650 angstrom, and for TM polarisation the on/off ratio was 28.5 dB. With a switching voltage of 1 V, an on/off ratio of 15 dB was achieved. Photocurrent spectra exhibited a red shift of 600 angstrom of the absorption edge when the voltage applied to the PIN diode was varied from 0.5 to -7 V. The corresponding shift of the room temperature exciton peak energy was 96 meV.

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We have studied the vertical transport and formation mechanisms of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. Under hydrostatic pressure two kinds of sequential resonant tunneling are observed within the pressure range from 0 to 4.5 kbar. A transition from Gamma-Gamma to Gamma-X sequential resonant tunneling occurs at P-t approximate to 1.6 kbar. For P < P-t, the high electric field domain is formed by the Gamma-Gamma process, while for P > P-t it is preferentially formed by the Gamma-X process.