Energy level analyses of even-parity J=1 and 2 Rydberg states of Sn I by multichannel quantum defect theory

This paper analyzes the energy levels along the even-parity J=1 and 2 Rydberg series of Sn I by multichannel quantum defect theory. A good agreement between theoretical and experimental energy levels was achieved. Below 59198 cm~(-1), a total of 85 and 23 new energy levels, respectively, in the J=1 and J=2 series, which cannot be measured previously by experiments, are predicted in this work. Based on the calculated admixture coefficients of each channel, interchannel interactions were discussed in detail. The results are helpful to understand the characteristics of configuration interaction among even-parity levels in Sn I.

Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD

High-resolution X-ray diffraction has been employed to investigate the diffuse scattering in a (0001) oriented GaN epitaxial film grown on sapphire substrate. The analysis reveals that defect clusters are present in GaN films and their concentration increases as the density of threading dislocations increases. Meanwhile, the mean radius of these defect clusters shows a reverse tendency. This result is explained by the effect of clusters preferentially forming around dislocations, which act as effective sinks for the segregation of point defects. The electric mobility is found to decrease as the cluster concentration increases.

Annealing ambient controlled deep defect formation in InP

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy

Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons. the donor and the acceptors were determined. These values are in good agreement with recent theoretical results.

Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu

In the present work specimens of mono-crystalline silicon carbide (4H polytype) were irradiated to three successively increasing ion fluences ranging from 7.2 x 10(14) to 6.0 x 10(16) ions/cm(2) (corresponding to the peak displacement damage of 1, 4 and 13 dpa) with Ne and Xe ions respectively with the energy of 2.3 MeV/amu. The irradiated specimens were subsequently annealed at temperatures of 1173 and 1273 K. Defect structure was investigated with transmission electron microscopy (TEM) using a cross-sectional specimen preparation technique. The typical microstructures of the annealed specimens irradiated with Ne or Xe ions to high fluences are characterized by small gas bubbles in high concentration in the peak damage region and black dots and dislocation loops (located in the basal plane) in a shallower and broader depth region. Larger dislocation loops were observed in the Xe-ion irradiated specimen than in the Ne-ion irradiated specimen at the same peak damage level. The enhanced formation of dislocation loops in the case of Xe-ion irradiation is understandable by assuming stronger inclination of heavier inert-gas atoms to occupy substitute site in the peak damage region.

Fabrication of a miniature twin-fuel-cell on silicon wafer

The fabrication and performance evaluation of a miniature twin-fuel-cell on silicon wafers are presented in this paper. The miniature twin-fuel-cell was fabricated in series using two membrane-electrode-assemblies sandwiched between two silicon substrates in which electric current, reactant, and product flow. The novel structure of the miniature twin-fuel-cell is that the electricity interconnect from the cathode of one cell to the anode of another cell is made on the same plane. The interconnect was fabricated by sputtering a layer of copper over a layer of gold on the top of the silicon wafer. Silicon dioxide was deposited on the silicon wafer adjacent to the copper layer to prevent short-circuiting between the twin cells. The feed holes and channels in the silicon wafers were prepared by anisotropic silicon etching from the back and front of the wafer with silicon dioxide acting as intrinsic etch-stop layer. Operating on dry H-2/O-2 at 25 degreesC and atmospheric pressure, the measured peak power density was 190.4 mW/cm(2) at 270 mA/cm(2) for the miniature twin-fuel-cell using a Nafion 112 membrane. Based on the polarization curves of the twin-fuel-cell and the two single cells, the interconnect resistance between the twin cells was calculated to be in the range from 0.0113 Omega (at 10 mA/cm(2)) to 0.0150 Omega (at 300 mA/cm(2)), which is relatively low. (C) 2003 Elsevier Science Ltd. All rights reserved.

a dynamic model to handle defect-oriented processes

Tongji Univ, Inst Dev Study, Syst Engn Soc China, Comm Syst Dynam, Syst Dynam Soc, China Chapter, Shanghai Inst Foreign Trade, Syst Dynam Soc, Chapters Asia Pacific Area

Defect evolution and hydrodynamic effects in lamellar ordering process of two-dimensional quenched block copolymers

The effects of hydrodynamic interactions on the lamellar ordering process for two-dimensional quenched block copolymers in the presence of extended defects and the topological defect evolutions in lamellar ordering process are numerically investigated by means of a model based on lattice Boltzmann method and self-consistent field theory. By observing the evolution of the average size of domains, it is found that the domain growth is faster with stronger hydrodynamic effects. The morphological patterns formed also appear different. To study the defect evolution, a defect density is defined and is used to explore the defect evolutions in lamellar ordering process. Our simulation results show that the hydrodynamics effects can reduce the density of defects. With our model, the relations between the Flory-Huggins interaction parameter chi, the length of the polymer chains N, and the defect evolutions are studied.

Defect formation induced by PAMAM dendrimers on Pt-supported bilayer lipid membranes investigated by electrochemistry

The interaction of polyamidoamine (PAMAM) dendrimers (generations 1-7) with supported bilayer lipid membranes was studied by cyclic votammetry and ac impedance. It is shown that the dendrimers (generations 4-6) can induce defects in the Pt-electrode-supported bilayer lipid membrane. The ability of dendrimers to induce defects was dependent on their shapes and surface charge. The results are consistent with a change in the morphology of the dendrimers from an open, branched structure for generations 1-4 to a closed, increasingly compact surface for generations 5-7.

The application and a substitution defect model for Eu3+ -> Eu2+ reduction in non-reducing atmospheres in borates containing BO4 anion groups

The variations of emission intensities of SrB4O7:Eu2+ and Sr2B5O9Cl:Eu2+ prepared in different atmospheres are discussed in view of the structure of host compounds. A model of substitution defects is proposed to explain the abnormal reduction of Eu3+ --> Eu2+ in non-reducing atmospheres of N-2, air and O-2. Experiment results show that SrB4O7:Eu2+ phosphor sample prepared in N-2 atmosphere has an emission intensity of 94% as high as that of the sample prepared in H-2 gas. This implies that the reduction of Eu2+ --> Eu2+ in non-reducing atmospheres could be potentially used in preparing phosphors, such as SrB4O7:Eu2+. (C) 1999 Elsevier Science Ltd. All rights reserved.

THE APPLICATION OF ULTRAMICROELECTRODE IN HOMOGENEOUS CATALYTIC REACTION .5. ELECTROCHEMICAL-BEHAVIOR OF MACRO-MICRO-MACRO TRIPLE AND MICRO-MICRO TWIN ELECTRODES AND THE QUASI-FIRST-ORDER HOMOGENEOUS CATALYTIC REACTION (EC') AT GENERATION/COLLECTION ELECT

A new type of macro-micro-macro triple electrode has been fabricated, the steady-state currents of solution redox species have been observed at an ultramicroband electrode by linear potential scan voltammetry, and generation/collection experiments have al

SOLID DEFECT STRUCTURE AND CATALYTIC ACTIVITY OF PEROVSKITE-TYPE CATALYSTS LA1-XSRXNIO3-LAMBDA AND LA1-1.333XTHXNIO3-LAMBDA

Two series of La1-xSrxNiO3-lambda and La1-1.333xThxNiO3-lambda catalysts have been prepared, and the relationships between the solid defect structure and catalytic activity for NH3 oxidation were measured. The results showed that in the range of x < 0.3, the samples possessed single perovskite-type structure, and as the content of Sr2+ decreased and that of Th4+ increased the catalytic activity increased which was paralleled with the Ni3+ concentration within the catalysts. The active oxygen species (O- or O2(2-)) were present not only on the surface but also in the bulk of the samples. The synergistic effect of transition metal ions with higher oxidation states and randomly distributed oxygen vacancies was the key factor determining catalytic activity of perovskite-type oxides. A redox mechanism for NH3 oxidation over ABO3 is proposed.