Double donor behavior of EL2 defect in photoquenching experiment


Autoria(s): 周滨; 杨锡权; 王占国
Data(s)

1998

Identificador

http://ir.semi.ac.cn/handle/172111/19297

http://www.irgrid.ac.cn/handle/1471x/104286

Idioma(s)

英语

Fonte

周滨;杨锡权;王占国.Double donor behavior of EL2 defect in photoquenching experiment,Rare Metals,1998,17(2):129

Palavras-Chave #半导体材料
Tipo

期刊论文