Low Temperature Properties of PI/SiO_2 Nanocomposite Films

In this paper, the mechanical properties of PI/Si_O, nanocomposite hybrid films with different silica doping levels are experimentally studied at low temperature. Experimental results show that the coefficient of thermal expansion (CTE) of the PI/Si_O, nanocomposite hybrid films gradually reduces when the ambiance temperature is decreased. At the liquid nitrogen temperature (77 K), the CTE value is about five times less than that at room temperature (287 K). The measured CTEs of hybrid films greatly decrease when doped with inorganic silica, especially when the silica doping level is more than 1 wt.%. However, too high silica contents (more than 10 wt.%) can cause problem to disperse effectively and the specimens become quite opaque. Experimental results also show that the effects of the pre-applied stress levels can be neglected on the CTE testing. When the ambient temperature changes from 287 to 77 K, the measured average values of the films' ultimate tensile strength (UTS) and Young's modulus increase about 60 and 90%, respectively, while the breaking elongation decreases about 42%.

Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy

Homoepitaxial ZnO films have been grown via liquid-phase epitaxy (LPE) on (000 1) oriented ZnO substrates. X-ray rocking curve revealed the high quality of the ZnO films with a FWHM of 40 arc sec. Films of thickness about 20 gm were gown in the temperature range 700-720 degrees C. The growth rate of ZnO films was estimated to be 0.3 mu m h(-1). Atomic force microscope analysis showed that the surface roughness of ZnO films was very low, which further confirmed the high crystallinity of ZnO films. (c) 2006 Elsevier B.V. All rights reserved.

Low temperature growth of c-axis oriented AlN films on gamma-LiAlO2 by radio frequency magnetron sputtering

Aluminum nitride (AlN) films were prepared on gamma-LiAlO2 substrates by radio frequency (rf) magnetron sputtering. The influence of substrate temperature (T-s) and nitrogen (N-2) concentration on film growth was investigated. The X-ray diffraction (XRD) results reveal that highly c-axis oriented AlN films can be obtained in the temperature range from room temperature (RT) to 300 degrees C. A smoother surface and a crystalline quality decrease with increasing N-2 concentration have been observed by XRD and atomic force microscopy (AFM) for the films deposited at lower substrate temperature. On the contrary, the degradation of the surface smoothness and the higher crystalline quality can be observed for the films deposited at a higher substrate temperature with N-2-rich ambient. The growth mechanism which leads to different crystalline quality of the films is discussed. (C) 2008 Elsevier B.V. All rights reserved.

Seasonal variations in the activity budget of Nomascus concolor jingdongensis at Mt. Wuliang, Central Yunnan, China: Effects of diet and temperature

We studied seasonal variation in the activity budget of a habituated group of Nomascus concolor jingdongensis at Mt. Wuliang, Central Yunnan, China from March 2005 to April 2006 via scan sampling at 5-min intervals. The study site is near the northern extreme of the distribution of hylobatids, at high altitude with extreme seasonality of temperature and rainfall. During the day, feeding manifested a bimodal pattern of high activity levels in mid-morning and mid-afternoon, whereas resting reached a peak at midday, with proportionally less time used for traveling. Annually, the group spent an average of 40.0% of the time resting, 35.1% feeding, 19.9% traveling, 2.6% singing, 1.2% playing, and 1.3% in other activities. The proportion of time allocated to activities showed significant monthly variations and was influenced by the diet and temperature. Gibbons increased traveling and playing time and decreased feeding time when they ate more fruit, and they decreased traveling, singing, and playing time and increased feeding time when they ate more leaves. Moreover, when the temperature was low, the gibbons decreased time traveling and increased time resting. In summary, black-crested gibbons employed high-effort activities when they ate more fruit and energy-conservation patterns when they ate more leaves and in low temperature. Behavioral data from the site are particularly useful in understanding gibbon behavioral adaptations to different sets of ecological conditions.

Different tolerances and responses to low temperature and darkness between waterbloom forming cyanobacterium Microcystis and a green alga Scenedesmus

The dynamics of planktonic cyanobacteria in eutrophicated freshwaters play an important role in formation of annual summer blooms, yet overwintering mechanisms of these water bloom forming cyanobacteria remain unknown. The responses to darkness and low temperature of three strains (unicellular Microcystis aeruginosa FACHB-905, colonial M. aeruginosa FACHB-938, and a green alga Scenedesmus quadricauda FACHB-45) were investigated in the present study. After a 30-day incubation under darkness and low temperature, cell morphology, cell numbers, chlorophyll a, photosynthetic activity (ETRmax and I-k), and malodialdehyde (MDA) content exhibited significant changes in Scenedesmus. In contrast, Microcystis aeruginosa cells did not change markedly in morphology, chlorophyll a, photosynthetic activity, and MDA content. The stress caused by low temperature and darkness resulted in an increase of the antioxidative enzyme-catalase (CAT) in all three strains. When the three strains re-grew under routine cultivated condition subjected to darkness and low temperature, specific growth rate of Scenedesmus was lower than that of Microcystis. Flow cytometry (FCM) examination indicated that two distinct types of metabolic response to darkness and low temperature existed in the three strains. The results from the present study reveal that the cyanobacterium Microcystis, especially colonial Microcystis, has greater endurance and adaptation ability to the stress of darkness and low temperature than the green alga Scenedesmus.

Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition

ZnO thin films were deposited on glass substrates at room temperature (RT) similar to 500 degrees C by pulsed laser deposition (PLD) technique and then were annealed at 150-450 degrees C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results showed that the c-axis orientation of ZnO thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees C, and thin films densified for the films deposited at RT with increasing annealing temperature. The transmittance spectra indicated that E-g of thin films showed a decreased trend with annealing temperature. From the PL measurements, there was a general trend, that is UV emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees C; no UV emission was observed for the films deposited at RT regardless of annealing treatment. Improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of UV emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of UV emission. It seems that annealing at lower temperature in air is an effective method to improve the UV emission for thin films deposited on glass substrate at substrate temperature above RT.

The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD

Low temperature (LT) AlN interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the GaN epilayer grown on Si (111) substrate. Optical Microscopy (OM), Atomic Force Microscopy (AFM), Surface Electron Microscopy (SEM) and X-Ray Diffraction (XRD) were employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). In addition, wet etching method was used to evaluate the defect of the GaN epilayer. The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness, interlayer number and growth temperature of the LT AlN interlayer. With the optimized LT AlN interlayer structures, high quality GaN epilayers with a low crack density can be obtained. (C) 2008 Elsevier Ltd. All rights reserved.

Narrowing of band gap and low-temperature spin glass behavior of FeNi co-doped ZnO nanowires

This letter reports on the Raman, optical and magnetic properties of FeNi co-doped ZnO nanowires prepared via a soft chemical solution method. The microstructural investigations show that the NiFe co-dopants are substituted into wurtzite ZnO nanostructure without forming any secondary phase. The co-doped nanowires show a remarkable reduction of 34 nm (267.9 meV) in the optical band gap, while suppression in the deep-level defect transition in visible luminescence. Furthermore, these nanowires exhibit ferromagnetism and an interesting low-temperature spin glass behavior, which may arise due to the presence of disorder and strong interactions of frustrated spin moments of Ni and Fe co-dopants on the ZnO lattice sites. Copyright (C) EPLA, 2009

Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature

We report the low-temperature magnetotransport behaviors of (Ga,Mn)As films with the nominal Mn concentration x larger than 10%. The ferromagnetic transition temperature T-C can be enhanced to 191 K after postgrowth annealing (Ga,Mn)As with x=20%. The temperature T-m, corresponding to the resistivity minimum in the curve of resistivity versus temperature at temperature below T-C, depends on Mn concentration, annealing condition, and magnetic field. Moreover, we find that the variable-range hopping may be the main conductive mechanism when temperature is lower than T-m.

Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD

Epitaxial growth of Zn-doped InGaAs on InP substrates has been carried out at 550degreesC by LP-MOCVD. Hole concentration as high as 6 x 10(19)cm(-3) has been achieved at the H-2 flow rate of 20 sccm through DEZn bubbler. The lattice constant of Zn-doped InGaAs was found to be dependent on the flow rate of DEZn, and the tensile strain mismatch increases with increasing H-2 flow rate of DEZn. The negative lattice mismatch of heavily Zn-dopped InGaAs may be due to, the small covalent bonding radius of zinc and the combination of butane from ethyl of DEZn,and TEGa. And the latter accelerates the pyrolysis of TEGa, which is the dominant mechanism in determining the negative mismatch of Zn-doped InGaAs. (C) 2003 Elsevier B.V. All rights reserved.

Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD

Effects of V/III ratio on heavily Si doped InGaAs and InP were studied using low pressure metalorganic chemical vapor deposition (LP-MOCVD) at a growth temperature of 550degreesC. In InGaAs, as the V/III ratio decreases from 256 to 64, the carrier concentration increases from 3.0 x 10(18) to 5.8 x 10(18) cm(-3), and the lattice mismatch of InGaAs to InP was observed to vary from -5.70 x10(-4) to 1.49 x 10(-3). In InP, when the V/III ratio decreases from 230 to 92, the same trend as that in Si doped InGaAs was observed that the carrier concentration increases from 9.2 x 10(18) to 1.3 x 10(19) cm(-3). The change of AsH3 was found to have stronger effect on Si incorporation in InGaAs at lower growth temperature than at higher growth temperature. (C) 2003 Elsevier B.V. All rights reserved.

Self-starting passively mode-locking all-solid-state laser with GaAs absorber grown at low temperature

We realize a stable self-starting passively mode-locking all-solid-state laser by using novel GaAs mirrors as the absorber and output coupler. The GaAs mirror is grown by the technology of metal organic chemical vapour deposition at low temperature. With such an absorber as the output coupler in the laser resonator, laser pulses with duration of 42ps were generated at a repetition rate of 400MHz, corresponding to the average power of 590mW.