Structural and up-conversion luminescence properties in Tm (3+)/Yb3+-codoped heavy metal oxide-halide glasses

Tm3+/Yb3+-codoped heavy metal oxide-halide glasses have been synthesized by conventional melting and quenching method. Structural properties were obtained based on the Raman spectra, indicating that halide ion has an important influence on the phonon density and maximum phonon energy of host glasses. Intense blue and weak red emissions centered at 477 and 650 nm, corresponding to the transitions (1)G(4) -> H-3(6) and (1)G(4) -> H-3(4), respectively, were observed at room temperature. The possible up-conversion mechanisms are discussed and estimated. With increasing halide content, the up-conversion luminescence intensity and blue luminescence lifetimes of Tm3+ ion increase notably. Our results show that with the substitution of halide ion for oxygen ion, the decrease of phonon density and maximum phonon energy of host glasses both contribute to the enhanced up-conversion emissions. (c) 2005 Elsevier B.V. All rights reserved.

Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation

In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers to improve the radiation hardness of the SIMOX material. The experiments of secondary ion mass spectroscopy (SIMS) analysis showed that some nitrogen ions were distributed in the buried oxide layers and some others were collected at the Si/SiO2 interface after annealing. The results of electron paramagnetic resonance (EPR) suggested the density of the defects in the nitrided samples changed with different nitrogen ion implantation energies. Semiconductor-insulator-semiconductor (SIS) capacitors were made on the materials, and capacitance-voltage (C-V) measurements were carried out to confirm the results. The super total dose radiation tolerance of the materials was verified by the small increase of the drain leakage current of the metal-oxide-semiconductor field effect transistor with n-channel (NMOSFETs) fabricated on the materials before and after total dose irradiation. The optimum implantation energy was also determined.

GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique

Semiconducting gadolinium silicide GdxSi samples were prepared by mass-analyzed low-energy dual ion beam epitaxy technique. Auger electron spectroscopy depth profiles indicate that the gadolinium ions are implanted into the single-crystal silicon substrate and formed 20 nm thick GdxSi film. X-ray double-crystal diffraction measurement shows that there is no new phase formed. The XPS spectra show that one type of silicon peaks whose binding energy is between that of silicide and silicon dioxide, and the gadolinium peak of binding energy is between that of metal Gd and Gd2O3. All of these results indicate that an amorphous semiconductor is formed. (C) 2002 Elsevier Science B.V. All rights reserved.

Nitrogen vacancy scattering in n-GaN grown by metal-organic vapor phase epitaxy

Electron mobility limited by nitrogen vacancy scattering was taken into account to evaluate the quality of n-type GaN grown by metal-organic vapor phase epitaxy. The nitrogen vacancy scattering potential used for our mobility calculation has to satisfy two requirements: such potential is (1) spatially short range, and (2) finite and not divergent at the vacancy core. A square-well potential was adopted to calculate the mobility, because it satisfies not only these two requirements, but also simplifies the calculation. As a result, the estimated mobility shows a T-1/2 temperature dependence, and is very sensitive to the potential well width. After introducing the nitrogen vacancy scattering, we obtained the best fitting between the calculated and experimental results for our high quality sample, and it was found that the measured mobility is dominated by ion impurity and dislocation scatterings at the low temperatures, but dominated by optical phonon and nitrogen vacancy scatterings at the high temperatures. (C) 2000 American Institute of Physics. [S0003-6951(00)04112-7].

Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing

VOx thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400 degrees C for 2 hours. The film also shows a polycrystal structure with grain size from 50nm to 150nm. The VOx thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VOx film with relatively high TCR and semiconductor-metal phase transition.

Formation and Properties of a Novel Heavy-Metal Chalcogenide Glass Doped with a High Dysprosium Concentration

A novel heavy-metal chalcogenide glass doped with a high dysprosium ion (Dy(3+)) concentration was prepared by the well-established melt-quenching technique from high-purity elements. The results show that when Cadmium (Cd) is introduced into chalcogenide glass, the concentration of Dy(3+) ions doped in GeGaCdS glasses is markedly increased, the thermodynamic performance improves, and the difference between T(g) and T(x) is >120 degrees C. The Vickers microhardness is also modified greatly, about 245 kgf/mm(2). The optical spectra indicate that all absorption and emission bands of Dy(3+) are clearly observed and red-shifted with increasing Dy(3+) concentration.

BACKGATING AND LIGHT SENSITIVITY IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

Three different types of GaAs metal-semiconductor field effect transistors (MESFET) by employing ion implantation, molecular beam epitaxy (MBE) and low-temperature MBE (LT MBE) techniques respectively were fabricated and studied in detail. The backgating (sidegating) measurement in the dark and in the light were carried out. For the LT MBE-GaAs buffered MESFETs, the output resistance R(d) and the peak transconductance g(m) were measured to be above 50 k Omega and 140 mS/mm, respectively, and the backgating and light sensitivity were eliminated. A theoretical model describing the light sensitivity in these kinds of devices is given. and good agreement with experimental data is reached.

An introduction to the trapping of clusters with ion traps and electrostatic storage devices

This paper presents an introduction to the application of ion traps and storage devices for cluster physics. Some experiments involving cluster ions in trapping devices such as Penning traps, Paul traps, quadrupole or multipole linear traps are briefly discussed. Electrostatic ion storage rings and traps which allow for the storage of fast ion beams without mass limitation are presented as well. We also report on the recently developed mini-ring, a compact electrostatic ion storage ring for cluster, molecular and biomolecular ion studies.

Near infrared lights emission of Ar-40(16+) impacting on metal surfaces

The highly charged ion Ar-40(16+) with the velocity (kinetic energy E (K)=150 keV, velocity V=8.5x10(5) m/s) smaller than Bohr velocity (V (Bohr)=2.9x10(6) m/s) was found to hove impacts on the surfaces of metals Ni, Mo, Au and Al, and the Ar atomic infrared light lines and X-rays spectra were simultaneously measured. The experimental results show that the highly charged ion that captures electrons is neutralized, and the multiply-excited hollow atom forms. The hollow atom cascade decay radiates lights from infrared to X-ray spectrum. The intensity of infrared lights shows that the metallic work functions play an important role in the neutralization process of highly charged ions during their interaction with metallic surfaces, which verifies the classical over-the-barrier model.

X-ray spectra induced by Xe-129(q+) impacting the metal surface

Using the slow highly charged ions Xe-129(q+) (q = 25, 26, 27; initial kinetic T-0 <= 4.65 keV/a.u.) to impact Au surface, the Au atomic M alpha characteristic X-ray spectrum is induced. The result shows that as long as the charge state of projectile is high enough, the heavy atomic characteristic X-ray can be effectively excited even though the incident beam is very weak (nA magnitude), and the X-ray yield per ion is in the order of 10(-8) and increases with the kinetic energy and potential energy of projectile. By measuring the Au M alpha-X-ray spectra, Au atomic N-level lifetime is estimated at about 1.33x10(-18) s based on Heisenberg uncertainty relation.

Research on metallic ion beam production at IMP

Since 1998, many experiments for metallic ion production have been done on LECR2 (Lanzhou ECR ion source NO.2), LECR3 (Lanzhou ECR ion source NO.3) and SECRAL (Superconductiong ECR ion source Advanced design in Lanzhou) at Institute of Modern Physics. The very heavy metallic ion beams such as those of uranium were also produced by the plasma sputtering method, and supplied for HIRFL (Heavy Ion Research Facility in Lanzhou) accelerators successfully. During the test, 11.5e mu AU(28+), 9e mu AU(24+) were obtained. Some ion beams of the metal having lower melting temperature such as Ni and Mg ion beams were produced by oven method on LECR3 too. The consumption rate was controlled to be lower for Mg-26 ion beams production, and the minimum consumption was about 0.3mg per hour. In this paper, the main experimental results are given. Some discussions are made for some experimental phenomena and results, and some conclusions are drawn.

Binding of metal ions with protein studied by a combined technique of microdialysis with liquid chromatography

A method has been developed for the determination of interactions of metal ions and protein by using microdialysis sampling technique combined with pre-column derivation and reversed-phase ion-pair liquid chromatographic (HPLC analysis. Cu(II), Zn(II) and human serum albumin (HSA) were chosen as model metal ions and protein, respectively. The mixed solutions of metal ions and HSA with different molar ratios buffered with 0.1 M Tris-HCl containing 0.1 M NaCl at pH 7.43 were sampled with a mirodialysis probe by keeping perfusion rate at 1 mul/min and the temperature at 37 degreesC. The free concentrations of metal ions in microdialysates were assayed by precolumn derivatization with meso-tetra(4-sulfophenyl)-porphyrin (TPPS4) followed ion-pair HPLC analysis. The recovery (R) of microdialysis sampling was measured in vitro under similar conditions as 65.74% for Cu(II), 70.45% for Zn(II) with R.S.D. below 3.2%. The primary binding constants and number of binding site estimated by the Scatchard plot analysis are 5.04 x 10(6) M-1 and 0.85 for Cu(II), and 9.87 x 10(6) M-1 and 1.10 for Zn(II), respectively. The competition of Cu(II) and Zn(II) at the second binding site on HSA was investigated, and it was observed that there is a second site on HSA to bind Cu(II) and Zn(II), the affinity of Cu(II) is stronger than that of Zn(II) to this second site of HSA. (C) 2001 Elsevier Science B.V. All rights reserved.

functional monomers and polymers.CXXXVI.effect of metal ions on the interaction of synthetic nucleic acid analogs

The effect of metal ions on the conformation of thymine-containing poly-D-lysine was studied by CD spectra in aqueous solution. Of the metal ions studied,only copper(Ⅱ)ion affected the conformation of mucleic acid analogs .copper(Ⅱ)ion also affected the specifically interacting system made up of thymine-containing poly-D-lysine and polyadenylic acid.

Layer-by-layer assembly of biologically inert inorganic ions/DNA multilayer films for tunable DNA release by chelation

In this work, we illustrate a simple chelation-based strategy to trigger DNA release from DNA-incorporated multilayer films, which were fabricated through the layer-by-layer (LbL) assembly of DNA and inorganic zirconium (IV) ion (Zr4+). After being incubated in several kinds of chelator solutions, the DNA multilayer films disassembled and released the incorporated DNA. This was most probably due to the cleavage of coordination/electrostatic interactions between Zr4+ and phosphate groups of DNA. Surface plasmon resonance (SPR), UV-vis spectrometry and atomic force microscopy (AFM) were used to characterize the assembly and the disassembly of the films.

Highly 3,4-Selective Polymerization of Isoprene with NPN Ligand Stabilized Rare-Earth Metal Bis(alkyl)s. Structures and Performances

Deprotonation of (ArNHPPh2NAr2)-N-1 (H[NPN](n), n = 1 - 10) by Ln(CH2SiMe3)(3)(THF)(2) (Ln = Lu, Y, Sc, Er) generated a series of rare-earth metal bis(alkyl) complexes [NPN](n)Ln(CH2SiMe3)(2)(THF)(2) (1-10), which under activation with [Ph3C][B(C6F5)(4)] and AliBu(3) were tested for isoprene polymerization. The correlation between catalytic performances and molecular structures of the complexes has been investigated. Complexes 1-5 and 8, where Ar-1 is nonsubstituted or ortho-alkyl-substituted phenyl, adopt trigonal-bipyramidal geometry. The Ar-1 and Ar-2 rings are perpendicular in 1-4 and 8 but parallel in 5. When Ar-1 is pyridyl, the resultant lutetium and yttrium complexes 9a and 9b adopt tetragonal geometry with the ligand coordinating to the metal ions in a N,N,N-tridentate mode, whereas in the scandium analogue 9c, the ligand coordinates to the Sc3+ ion in a N,N-bidentate mode. These structural characteristics endow the complexes with versatile catalytic performances, With increase of the steric bulkiness of the ortho-substituents Ar-1 and Ar-2, the 3,4-selectivity increased stepwise from 81.6% for lutetium complex 1 to 96.8% for lutetium complex 6 and to 97.8% for lutetium complex 7a. However, further increase of the steric bulk of the ligand led to a slight drop of 3,4-selectivity for the attached complex 5 (95.1%).