Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method

Diluted-magnetic GaN:Sm:Eu films have been fabricated by co-implantation of Sm and Eu ions into c-plane (0001) GaN films and a subsequent annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The XRD and AFM analyses show that the annealing process can effectively recover the crystalline degradation caused by implantation. Compared with GaN:Sm films, more defects have been introduced into GaN:Sm:Eu films due to the Eu implantation process. According to the SQUID analysis, GaN:Sm:Eu films exhibit clear room-temperature ferromagnetism. Moreover, GaN:Sm:Eu films show a lower saturation magnetization (Ms) than GaN:Sm films.

Effect of Ru addition to CO/SiO2/HZSM-5 catalysts on Fischer-Tropsch synthesis of gasoline-range hydrocarbons

Microporous HZSM-5 zeolite and mesoporous SiO2 supported Ru-Co catalysts of various Ru adding amounts were prepared and evaluated for Fischer-Tropsch synthesis (FTS) of gasoline-range hydrocarbons (C-5-C-12). The tailor-made Ru-Co/SiO2/HZSM-5 catalysts possessed both micro- and mesopores, which accelerated hydrocracking/hydroisomerization of long-chain products and provided quick mass transfer channels respectively during FTS. In the same time. Ru increased Cor reduction degree by hydrogen spillover, thus CO conversion of 62.8% and gasoline-range hydrocarbon selectivity of 47%, including more than 14% isoparaffins, were achieved simultaneously when Ru content was optimized at 1 wt% in Ru-Co/SiO2/HZSM-5 catalyst.

Room-Temperature Ferromagnetism in Co-Doped In2O3 Nanocrystals

Co-doped In2O3 nanocrystals showing room-temperature ferromagnetism have been successfully prepared by a simple sol-gel synthesis route. The sample displays it clear ferromagnetism behavior above 300 K. Phase and structure analyses reveal that the nanocrystals are crystallized with Co ions substituted for In ions in the In2O3 matrix, and no trace of secondary phases or clusters is detected. The experimental results are explained theoretically by first-principles calculations based on density functional theory, which indicate that the native ferromagnetic behavior of Co-doped In2O3 could be mainly ascribed to the strong d-d coupling of the magnetic ions.

INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS

The interfacial reactions between thin films of cobalt and silicon and (100)-oriented GaAs substrates in two configurations, Co/Si/GaAs and Si/Co/GaAs, were studied using a variety of techniques including Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. The annealing conditions were 200, 300, 400, 600-degrees-C for 30 min, and rapid thermal annealing for 15 s. It was found that Si layer in the Co/Si/GaAs system acts as a barrier at the interface between Co and GaAs when annealed up to 600-degrees-C. The interfacial reaction between Co and Si is faster than that between Co and GaAs in the system of Si/Co/GaAs. The sequence of compound formation for the two metallizations studied (Co/Si/GaAs and Si/Co/GaAs) depends strongly on the sample configuration as well as the layer thickness of Si and Co (Co/Si atomic ratio). From our results, it is promising to utilize Co/Si/GaAs multilayer film structure to make a CoSi2/GaAs contact, and this CoSi2 may offer an alternative to the commonly used W silicides as improved gate metallurgies in self-aligned metal-semiconductor field effect transistor (MESFET) technologies.

INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING

The interaction of Co with Si and SiO2 during rapid thermal annealing has been investigated. Phase sequence, layer morphology, and reaction kinetics were studied by sheet resistance, x-ray diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. With increasing annealing temperature, Co film on Si(100) is transformed sequentially into Co2Si, CoSi, and finally CoSi2 which corresponds to the minimum of sheet resistance. No evidence of silicide formation was observed for Co/SiO2 annealed even at the high temperature of 1050-degrees-C.

维生素C二步混菌发酵中伴生菌作用机制的研究

该文对维生素C“二步发酵法”第二步混合发酵中伴生菌对产酸菌——氧化葡萄糖酸杆菌作用机制进行了研究.除巨大芽孢杆菌外，还选用另外几种芽孢杆菌及酵母菌作为产酸菌的伴生菌.各伴生菌及其胞外液对产酸菌生长和2-酮基-L-古龙酸合成能力均有刺激作用，表明产酸菌的伴生菌具有广谱性.利用膜超滤浓缩、柱层析及电泳等技术，从伴生菌B2980胞外液中分离纯化出达电泳均一纯的高纯度活性蛋白质样品，并对其部分基本特性进行分析.结果表明：该活性物质是分子量为36300道尔顿，等电点为4.75的酸性蛋白质，并且是由一个亚基构成的单体蛋白.活性蛋白质的结晶呈规则的菱形形状，其水溶液显著提高产酸菌中SDH酶活性.试验中依伴生菌胞外液对产酸菌中SDH酶活性的作用，建立了该研究中目标活性物质的快速检测方法.