The influence of Schottky contact metals on the strain of AlGaN barrier layers

Ir and Ni Schottky contacts on strained Al0.25Ga0.75N/GaN heterostructures, and the Ni Schottky contact with different areas on strained Al0.3Ga0.7N/GaN heterostructures have been prepared. Using the measured capacitance-voltage curves and the current-voltage curves obtained from the prepared Schottky contacts, the polarization charge densities of the AlGaN barrier layer for the Schottky contacts were analyzed and calculated by self-consistently solving Schrodinger's and Poisson's equations. It is found that the polarization charge density of the AlGaN barrier layer for the Ir Schottky contact on strained Al0.25Ga0.75N/GaN heterostructures is different from that of the Ni Schottky contact, and the polarization charge densities of the AlGaN barrier layer for Ni Schottky contacts with different areas on strained Al0.3Ga0.7N/GaN heterostructures are different corresponding to different Ni Schottky contact areas. As a result, the conclusion can be made that Schottky contact metals on strained AlGaN/GaN heterostructures have an influence on the strain of the AlGaN barrier layer. (C) 2008 American Institute of Physics.

Magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO: First-principles calculations

The electronic structure and magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO have been investigated using first-principles methods. We show that the magnetic coupling between Gd or Nd ions in the nearest neighbor sites is ferromagnetic. The stability of the ferromagnetic coupling between Gd ions can be enhanced by appropriate electron doping into ZnO Gd system and the room-temperature ferromagnetism can be achieved. However, for ZnO Nd system, the ferromagnetism between Nd ions can be enhanced by appropriate holes doping into the sample. The room-temperature ferromagnetism can also be achieved in the n-conducting ZnO Nd sample. Our calculated results are in good agreement with the conclusions of the recent experiments. The effect of native defects (V-Zn, V-O) on the ferromagnetism is also discussed. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3176490]

First-Principles Study of Magnetic Properties of 3d Transition Metals Doped in ZnO Nanowires

The defect formation energies of transition metals (Cr, Fe, and Ni) doped in the pseudo-H passivated ZnO nanowires and bulk are systematically investigated using first-principles methods. The general chemical trends of the nanowires are similar to those of the bulk. We also show that the formation energy increases as the diameter of the nanowire decreases, indicating that the doping of magnetic ions in the ZnO nanowire becomes more difficult with decreasing diameter. We also systematically calculate the ferromagnetic properties of transition metals doped in the ZnO nanowire and bulk, and find that Cr ions of the nanowire favor ferromagnetic state, which is consistent with the experimental results. We also find that the ferromagnetic coupling state of Cr is more stable in the nanowire than in the bulk, which may lead to a higher T (c) useful for the nano-materials design of spintronics.

Abatement of waste gases and water during the processes of semiconductor fabrication

The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells

We have investigated the photo-excited capacitance-voltage (C-V) characteristics as well as the photoluminescence spectra under different biases of a wide quantum well (QW) embedded in an n(+)-i-n(+) double-barrier structure. The pronounced peak feature at zero bias in the C-V spectrum observed upon illumination is regarded as a kind of quantum capacitance related to the quantum confined Stark effect, originating from the spatial separation of the photo-generated electron and hole gas in the QW. This fact is further demonstrated through the comparison between the C-V curve with the PL intensity versus applied voltage relationship under the same excitation. The results may provide us with a more direct and sensitive means in the detection of the separation and accumulation of both types of free carriers-electrons and holes-in low-dimensional semiconductor structures, especially in a new type of optical memory cell.

Trace theory

The concept of traces has been introduced for describing non-sequential behaviour of concurrent systems via its sequential observations. Traces represent concurrent processes in the same way as strings represent sequential ones. The theory of traces can be used as a tool for reasoning about nets and it is hoped that applying this theory one can get a calculus of the concurrent processes anologous to that available for sequential systems. The following topics will be discussed: algebraic properties of traces, trace models of some concurrency phenomena, fixed-point calculus for finding the behaviour of nets, modularity, and some applications of the presented theory.

Measurement of trace phosphorus in dichlorosilane by high-temperature hydrogen reduction gas chromatography

Dichlorosilane, a gas at normal temperature with a boiling point of 8.3 degrees C, is very difficult to sample and detect using conventional methods. We reduced phosphorus in dichlorosilane to PH3 by hydrogen at high temperature, then PH3 was separated from chlorosilanes by NaOH solution and from other hydrides by chromatographic absorption. Thus the problem of interference of chlorosilanes and other hydrides was overcome and PH, was measured by a double flame photometric detector at 526 nm. This method was sensitive, reliable and convenient and the sensitivity reached as low as 0.04 mu g/l.

Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas (2DEG) is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors (AlGaN/GaN HFETs). Current-voltage (I-V) characteristics for ungated AlGaN/GaN heterostructures and capacitance-voltage (C-V) characteristics for AlGaN/GaN HFETs are obtained, and the electron mobility for the ungated AlGaN/GaN heterostructure is calculated. It is found that the electron mobility of the 2DEG for the ungated AlGaN/GaN heterostructure is decreased by more than 50% compared with the electron mobility of Hall measurements. We propose that defects are introduced into the AlGaN barrier layer and the strain of the AlGaN barrier layer is changed during the annealing process of the source and drain, causing the decrease in the electron mobility.