STUDIES OF THE PROMISING MATERIAL COSI2 ON GAAS SUBSTRATES

The thermal stability of CoSi2 thin films on GaAs substrates has been studied using a variety of techniques. The CoSi2 thin films were formed by depositing Co(500 angstrom) and Si(1800 angstrom) layers on GaAs substrates by electron-beam evaporation followed by annealing processes, where the Si inter-layer was used as a diffusion/reaction barrier at the interface. The resistivity of CoSi2 thin films formed is about 30 muOMEGA cm. The Schottky barrier height of CoSi2/n-GaAs is 0.76 eV and the ideality factor is 1.14 after annealing at 750-degrees-C for 30 min. The CoSi2/GaAs interface is determined to be thermally stable and the thin film morphologically uniform on GaAs after 900-degrees-C/30 s anneal. The CoSi2 thin films fulfill the requirements in GaAs self-aligned gate technology.

EFFECTS OF DEEP CENTERS AT PT SI INTERFACES AND HYDROGENATION

Electrical measurements were combined with surface techniques to study the Pt/Si interfaces at various silicide formation temperatures. Effects of deep centers on the Schottky barrier heights were studied. Hydrogen plasma treatment was used to passivate the impurity/defect centers at the interfaces, and the effects of hydrogenation on the Schottky barrier heights were also examined. Combining our previous study on the Pt/Si interfacial reaction, factors influencing the PtSi/Si Schottky barrier diode are discussed.

ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE

Microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by using Auger-electron spectroscopy (AES) and x-ray photoemission spectroscopy (XPS). AES reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and GaAs substrate. Using XPS it is found that both Ga2O3 and As2O3 are removed from the GaAs surface by the P2S5/NH4OH treatment; instead, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the GaAs surface.

Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures

A reproducible terahertz (THz) photocurrent was observed at low temperatures in a Schottky wrap gate single electron transistor with a normal-incident of a CH_3OH gas laser with the frequency 2. 54THz.The change of source-drain current induced by THz photons shows that a satellite peak is generated beside the resonance peak. THz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak. This indicates that the satellite peak exactly results from the THz photon-assisted tunneling. Both experimental results and theoretical analysis show that a narrow spacing of double barriers is more effective for the enhancement of THz response.

掩埋隧道结VCSEL芯片小信号等效电路模型

提出了适用于一种1.55μm掩埋隧道结垂直腔面发射激光器(VCSEL)芯片的小信号等效电路模型.等效电路的提出是基于半导体激光器速率方程以及VCSEL芯片结构,电路中各元件都有严格的物理意义.根据实验测得芯片的反射系数及传输参数,通过小信号等效电路仿真模拟,得到电路各元件参数值.不同偏置电流下,模拟结果与实验结果吻合都非常好,证明了该等效电路的有效性.

Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs

Homoepitaxial growth of4H-SiC on off-oriented Si-face （0001） 4H-SiC substrates was performed at 1500℃ by using the step controlled Epitaxy. Ti/4H-SiC Schottky barrier diodes （SBDs） with blocking voltage over lkV have been made on an undoped epilayer with 32μm in thick and 2-5 × 10^15 cm^-3 in carrier density. The diode rectification ratio of forward to reverse （defined at ± 1V） is over 107 at room temperature and over 10^2 at 538K. Their electrical characteristics were studied by the current-voltage measurements in the temperature range from 20 to 265 ℃. The ideality factor and Schottky barrier height obtained at room temperature are 1.33 and 0. 905eV, respectively. The SBDs have on-state current density of 150A/cm^2 at a forward voltage drop of about 2.0V. The specific on-resistance for the rectifier is found to be as 7.9mΩ · cm^2 and its variation with temperature is T^2.0.

1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors

A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetector operating at 1.3 mum with the full-width at half-maximum of 5.5 nm was demonstrated. The GaInNAs RCE photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. For a 100-mum diameter RCE photodetector, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3-dB bandwidth is 308 MHz. The reasons resulting in the poor high speed property were analyzed. The tunable wavelength of 18 nm with the angle of incident light was observed.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.

CSRe电子冷却模式下核质量测量研究

研究了CSRe电子冷却模式下使用线性质量刻度时,空间电荷效应对测量精度的影响、CSRe上测量190Ir质量的实验可行性以及估算了电子冷却模式下,使用非线性刻度法所能达到的测量精度。理论上的分析表明,CSRe在束流和二极铁磁场稳定的理想情况下,如果电子冷却对同种离子束的冷却效果能达到δp/p=10-6量级,采用非线性刻度的方法,能够对像190Ir这样的重离子达到σ(m)/m≈10-8的测量精度。

Primary design of stochastic cooling in CSRm

Based on several facts of CSRrn, such as the layout of the ring, the lattice parameters, exiting Schottky noise diagnosis equipment and fund, the primary stochastic cooling design of CSRm has been carried out. The optimum cooling time and the optimum cooling bandwidth axe obtained through simulation using the cooling function. The results indicate that the stochastic cooling is quite a powerful cooling method for CSRm. The comparison of the cooling effects of stochastic cooling and electron cooling in CSR are also presented. We can conclude that the combination of the two cooling methods on CSRrn will improve the beam cooling rate and quality beam greatly.

CSR随机冷却研究

随机冷却是用一个宽带反馈系统对束流进行衰减，位于束流上游的探测器探测到与粒子偏差成正比的电子学信号，这一输出信号经过放大滤波系统后被加到下游的冲击器上，粒子在冲击器上得到正比于偏差的校正，从而达到冷却的目的。随机冷却可以用于粒子储存环任意能区的冷却，尤其是对大动量分散的次级束、高能束、稀有粒子束有其独特的作用，并与电子冷却互补。本论文首先对随机冷却的发展历史及贡献作了叙述，并对国外研究现状以及随机冷却同其它冷却的不同作了描述，继而提出了在HIRFL-CSR上建立随机冷却的重要性、必要性以及条件的成熟性。接着本论文对Schottky噪声信号理论、随机冷却理论（分别在时域和频域下）作了详细的推导和描述，并对-Schoftky噪声诊断和用于随机冷却系统测量和束流稳定性分析的束流传输函数作了一定的分析和讨论。由于探测器和冲击器在随机冷却中起着核心作用，因此也对探测器和冲击器作了一定的研究。最后，也是本论文的核心部分，根据CSR的实际情况，如环的Lattice参数，环上元件布置，现有Sdhottky诊断装置以及资金等，对CSR随机冷却做了初步的设计和优化，用冷却方程和Fokker-Planck方程对CSR随机冷却做了详细的数值模拟计算，得到了最佳带宽、冷却时间、频谱上束流谱密度分布函数随时间的变化，以及在冷却过程中的束流分布变化等值，并且对功率限定情况作了讨论研究表明随机冷却对CSR束流冷却速度很快，冷却效果很好。并对电子冷却和随机冷却做了比较，提出对CSR束流冷却用电子冷却和随机冷却相结合的办法，先用随机冷却粗冷，再用电子冷却精细冷却，这样可以得到更高流强更好品质的束流。本文对具体冷却系统的设计补优代；健滇码运行有重要意义为CSR随机冷却系统的建造做了充分的准备，也为实验数据的分析提供了理论依据。

Investigation on internal electric field distribution of organic light-emitting diodes (OLEDs) with Eu2O3 buffer layer

We have found that organic light-emitting diode (OLED) performance was highly improved by using europium oxide (Eu2O3) as a buffer layer on indium tin oxide (ITO) in OLEDs based on tris-(8-hydroxyquinoline) aluminium (Alq(3)), which showed low turn-on voltage, high luminance, and high electroluminescent (EL) efficiency. The thickness of Eu2O3 generally was 0.5-1.5 nm. We investigated the effects of Eu2O3 on internal electric field distributions in the device through the analysis of current-voltage characteristics, and found that the introduction of the buffer layer balanced the internal electric field distributions in hole transport layer (HTL) and electron transport layer (ETL), which should fully explain the role of the buffer layer in improving device performance. Our investigation demonstrates that the hole injection is Fowler-Nordheim (FN) tunnelling and the electron injection is Richardson-Schottky (RS) thermionic emission, which are very significant in understanding the operational mechanism and improving the performance, of OLEDs.

CO_2在TiO_2-CuO修饰Cu电极上的光电化学还原

制备了TiO2-CuO修饰Cu电极,并对CO2在该复合光电电极上的还原行为进行了研究。光电化学测试表明,TiO2有助于电极的光电转换,能注入更多的电子促进CO2还原。TiO2-CuO/Cu复合电极在光照条件下对CO2具有很好的光电催化还原活性,使还原电位正移约100 mV,同时有效地抑制了水的光电分解。Mott-Schottky曲线测定表明,TiO2-CuO/Cu复合电极具有n型半导体性质,其平带电位随光照时间的增加而负移。光谱及色质谱测试证明,CO2在TiO2-CuO/Cu复合电极上的光电化学还原产物为甲酸和甲醛,还有少量乙烯和甲烷。在-1.2 V条件下光照3 h,CO2的转化率可达32%。基于实验结果对CO2光电还原机理进行了推断。

Investigation of charge-carrier injection characteristics in NPB/Alq3 heterojunction devices

The effect of copper phthalocyanine (CuPc) and LiF interfacial layers on the charge-carrier injection in NN'-di(naphthalene-l-yl)N,N'-diphenyl-benzidine (NPB)/tris(8-hydroxyquinoline) aluminium (Alq(3)) organic heterojunction devices have been studied through the analysis of current-voltage characteristics. The investigation clearly demonstrated that the hole injection into NPB from anode is Fowler-Nordheim (FN) tunneling and the electron injection into Alq3 from cathode is Richardson-Schottky (RS) thermionic emission. The barrier heights obtained from the FN and RS models proved that the band alignments for charge-carrier injection are greatly improved by the CuPc and LiF interfacial layers, which should fully clarify the role of the interfacial layer on the improvement of device performance.

多晶富镉Hg_(1-x)Cd_xTe的电沉积及Hg_(0.09)Cd_(0.91)Te薄膜的光电化学行为

本文研究了在酸性CdSO_4+HTeO_2~+6HgCl_2 电解液中多晶富镉Hg_(1-x),Cd_(?),Te(x>0.5)的电沉积过程,实现了三种离子在同一电位下共沉积的技术。对在钛基底上沉积出的薄膜进行XRD,SEM和EDAX分析,结果表明薄膜为闪锌矿型的多晶结构,分布均匀连续。考察了(1—x)=0.09时多晶薄膜在多硫氧化还原电对液中的光电化学行为,光强为100mW/cm~2时,短路光电流I_(sc)=1.88mA/cm~2,开路光电压V_(oc)=0.25V,填充因子F·F=0.22。由光电化学光谱所确定出的禁带宽度E_g=1.26eV,Mott-schottky曲线给出了电极的平带电位φfb为—1.26V(vs.SCE),从而得到开路光电压V_(oc)可能达到的最大值为0.49V。因此,多晶富镉Hg_(1-x)Cd_xTe薄膜是一种很有潜力的光活性电极材料。