INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS

The interfacial reactions between thin films of cobalt and silicon and (100)-oriented GaAs substrates in two configurations, Co/Si/GaAs and Si/Co/GaAs, were studied using a variety of techniques including Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. The annealing conditions were 200, 300, 400, 600-degrees-C for 30 min, and rapid thermal annealing for 15 s. It was found that Si layer in the Co/Si/GaAs system acts as a barrier at the interface between Co and GaAs when annealed up to 600-degrees-C. The interfacial reaction between Co and Si is faster than that between Co and GaAs in the system of Si/Co/GaAs. The sequence of compound formation for the two metallizations studied (Co/Si/GaAs and Si/Co/GaAs) depends strongly on the sample configuration as well as the layer thickness of Si and Co (Co/Si atomic ratio). From our results, it is promising to utilize Co/Si/GaAs multilayer film structure to make a CoSi2/GaAs contact, and this CoSi2 may offer an alternative to the commonly used W silicides as improved gate metallurgies in self-aligned metal-semiconductor field effect transistor (MESFET) technologies.

INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AU AND HYDROGENATED AMORPHOUS SI STUDIED BY XPS AND AES

Interfacial formation processes and reactions between Au and hydrogenated amorphous Si have been studied by photoemission spectroscopy and Auger electron spectroscopy. A three-dimensional growth of Au metal cluster occurs at initial formation of the Au/a-Si:H interface. When Au deposition exceeds a critical time, Au and Si begin interdiffusing and react to create an Au-Si alloy region. Annealing enhances interdiffusion and a Si-rich region exists on the topmost surface of Au films on a-Si:H.

PHOTOEMISSION-STUDY OF THE INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AL AND HYDROGENATED AMORPHOUS SI

Using photoemission spectroscopy and Auger electron spectroscopy, the interfacial formation process and the reactions between Al and hydrogenated amorphous Si are probed, and annealing behaviors of the Al/a-Si:H system are investigated as well. It is found that a three-dimensional growth of Al metal clusters which includes reacted Al and non-reacted metal Al occurs at the initial Al deposition time, reacted Al and Si alloyed layers exist in the Al/a-Si:H interface, and non-reacted Al makes layer-by-layer growth forming a metal Al layer on the sample surface. The interfacial reactions and element interdiffusion of Al/a-Si:H are promoted under the vacuum annealing.

Absorption spectra of Se-8-ring clusters in zeolite 5A

Samples with different weight ratio of Se to zeolite 5A (Se concentration) have been prepared by loading Se into the pores of zeolite 5A, and the measuerments of the absorption and Raman spectra have been carried out for the prepared samples. The measured absorption edges of the samples are close to the value for monoclinic Se containing Se-8-ring, suggesting the formation of Se-8-ring clusters(1) in the pores. The continuous and broadening features of the absorption spectra are interpreted by the strong electron-nucleus coupling in the Se-8-ring cluster. The absorption edges are red shifted with the increase of the Se concentration. It is tentatively attributed to two reasons. One is the existence of the double Se-8-ring cluster in the high Se concentration samples, and the other is that for the strong electron-nucleus coupling cluster, the absorption edge of the clusters system will be red shifted with the increase of the cluster concentration in the clusters system. A single broad band at about 262 cm(-1) is observed in the Raman spectra, which further supports the formation of Se-8-ring clusters. (C) 1997 Published by Elsevier Science S.A.

Absorption and Raman spectra of Se-8-ring clusters in zeolite 5A

Samples with different weight ratio of Se to zeolite 5A (Se composition) have been prepared by loading Se into the cages of zeolite 5A and the measurements of the absorption and Raman spectra have been carried out for the prepared samples. The measured absorption edges of the samples close and blue shifted to the value for monoclinic Se containing Se-8-ring, suggesting the formation of Se-8-ring clusters dagger in the cages. The continuous and broadening features of the absorption spectra are interpreted by the strong electron-phonon coupling in Se-8-ring clusters. The sample with high Se composition has a red shift of the absorption band edge relative to the samples with less Se composition. It is tentatively attributed to the reason that with different Se composition, single Se-8-ring clusters and double Se-8-ring clusters are formed in the cages of zeolite 5A. A single broad band at about 262 cm(-1) is observed in the Raman spectra, that gives the further support of the formation of Se-8-ring clusters. Copyright (C) 1996 Elsevier Science Ltd

A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAIAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.

Transmission through a Quantum Dot Embedded in a Double-slit-like Aharonov-Bohm Ring

We investigate the electron transport through a double-slit-like Aharonov-Bohm (AB) ring with a quantum dot (QD) embedded in one of its arms. Considering both the resonance of the dot and interference effect, the magnitude and phase of the transmission amplitude through the QD are calculated using Green's function approach. The numerical results are in good agreement with the experimental observations.

Phase character of the electron transport through a double quantum dot in a mesoscopic ring

We theoretically study the electron transport through a double quantum dot (QD) in the Coulomb blockade regime and reveal the phase character of the transport by embedding the double QD in a mesoscopic Aharonov-Bohm ring. It is shown that coherent transport through the double QD is preserved in spite of intradot and interdot Coulomb interactions.