Energy bands and acceptor binding energies of GaN

The energy bands of zinc-blende and wurtzite GaN are calculated with the empirical pseudopotential method, and the pseudopotential parameters for Ga and N atoms are-given. The calculated energy bands are in agreement with those obtained by the ab initio method. The effective-mass theory for the semiconductors of wurtzite structure is established, and the effective-mass parameters of GaN for both structures are given The binding energies of acceptor states are calculated by solving strictly the effective-mass equations. The binding energies of donor and acceptor are 24 and 142 meV for the zinc-blende structure, 20 and 131, and 97 meV for the wurtzite structure, respectively, which are consistent with recent experimental results. It is proposed that there are two kinds of acceptor in wurtzite GaN. One kind is the general acceptor such as C, which substitutes N, which satisfies the effective-mass theory. The other kind of acceptor includes Mg, Zn, Cd, etc., the binding energy of these accepters is deviated from that given by the effective mass theory. In this report, wurtzite GaN is grown by the molecular-beam epitaxy method, and the photoluminescence spectra were measured. Three main peaks are assigned to the donor-acceptor transitions from two kinds of accepters. Some of the transitions were identified as coming from the cubic phase of GaN, which appears randomly within the predominantly hexagonal material. [S0163-1829(99)15915-0].

Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D

We have developed a novel InP-based, ridge-waveguide photonic integrated circuit (PIC), which consists of a 1.1-um wavelength Y-branch optical waveguide with low loss and improved far field pattern and a 1.3-um wavelength strained InGaAsP-InP multiple quantum-well superluminescent diode, with bundle integrated guide (BIG) as the scheme for monolithic integration. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method (BPM). The amplified spontaneous emission of the device is up to 10 mW at 120 mA with no threshold and saturation. Spectral characteristics of about 30 nm width and less than I dB modulation are achieved using the built-in anti-lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12 degrees x8 degrees, resulting in good fiber coupling. The compactness, simplicity in fabrication, good superluminescent performance, low transmission loss and estimated low coupling loss prove the BIG and Y-branch method to be a feasible way for integration and make the photonic integrated circuit of Y-branch and superluminescent diode an promising candidate for transmitter and transceiver used in fiber optic gyroscope.

Kinetic characterization of photoinduced anisotropy in diarylethene film

Based on the theoretical model we have proposed, a complete study on the kinetics of photoincluced anisotropy in diarylethene films is performed. The kinetic curves of molecular concentration, photoincluced dichroism and birefringence are calculated, respectively. It is found that the colored molecular concentration decreases with the increase of the excitation exposure until saturation, and the photoincluced anisotropy increases to a maximum and then decreases gradually. The optimal exposure is 260 J/cm(2). In addition, the transmittance of probe beam reflecting the anisotropy is measured by experiment. The theoretical results are compared with experimental data, and basic concordance is found between both sets of data. (C) 2008 Elsevier B.V. All rights reserved.

A high-efficiency high-power evanescently coupled UTC-photodiode

The effects of the multimode diluted waveguide on quantum efficiency and saturation behavior of the evanescently coupled uni-traveling carrier(UTC)photodiode structures are reported. Two kinds of evanescently coupled uni-traveling carrier photodiodes(EC-UTC-PD)were designed and characterized: one is a conventional EC-UTC-PD structure with a multimode diluted waveguide integrated with a UTC-PD; and the other is a compact EC-UTC-PD structure which fused the multimode diluted waveguide and the UTC-PD structure together. The effect of the absorption behavior of the photodiodes on the efficiency and saturation characteristics of the EC-UTC-PDs is analyzed using 3-D beam propagation method, and the results indicate that both the responsivity and saturation power of the compact EC-UTC-PD structures can be further improved by incorporating an optimized compact multimode diluted waveguide.

A High-Efficiency Fiber-to-Waveguide Coupler with Low Polarization Dependence Using a Diluted Waveguide in InP Substrate with a 1.55μm Wavelength

We propose a fiber-to-waveguide coupler for side-illuminated p-i-n photodiodes to obtain high responsivity and low polarization dependence that is grown on InP substrate and is suitable for surface hybrid integration in low cost modules. The fiber-to-waveguide coupler is based on a diluted waveguide,which is composed of ten periods of undoped 120nm InP/80nm InGaAsP （1.05μm bandgap） multiple layers. Using the semi-vectorial three dimensional beam propagation method （BPM） with the central difference scheme,the coupling efficiency of fiber-to-waveguide under different conditions is simulated and studied,and the optimized conditions for fiber-to-waveguide coupling are obtained. For TE-like and TM-like modes,the calculated maximum coupling efficiency is higher than 94% and 92% ,respectively. The calculated polarization dependence is less than 0. ldB,showing good polarization independence.

Comparison of Loss and Crosstalk Characteristics of SOI Based Intersecting Waveguides with Different Bend Structures

By means of two dimension beam propagation method (2D-BPM) with high order Pade approximation, behaviors of SOI waveguide based bend intersections with variant bending radius are simulated and analized. The result shows that crosstalk of intersections decreases with the increase of bending radius and intersecting angle. Furthermore, loss and crosstalk characteristics of bend intersections formed by sine bend, cosine bend and arc bend are compared. Sine bend based structures are proved that it can present lowest loss and smallest crosstalk properties among the three and may find their wide application in the design of bend intersections and other more complicated photonic devices and circuits.

An Efficient MMI SOI Splitter with Multimode Input/Output Waveguides

A 1×8 multimode interference power splitter with multimode input/output waveguides in SOI material is designed by the beam propagation method and fabricated by the inductive coupled plasma etching technology for use in fiber optics communication systems.The fabricated device exhibits low loss and good coupling uniformity.The excess loss is lower than 0.8dB,and the uniformity is 0.45dB at the wavelength of 1550nm.Moreover,the polarization dependent loss is lower than 0.7dB at 1550nm.The device size is only 2mm×10mm.

Design and numerical analysis for low birefringence silica on silicon waveguides

A new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented. Using this method, a silicon layer is left at the side of waveguide. The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method, respectively. The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.

Polarization-Insensitive Silica on Silicon Arrayed Waveguide Grating Design

A new technology for fabrication of silica on silicon arrayed waveguide grating (AWG) based on deep etching and thermal oxidation is presented.Using this method,a silicon layer is remained at the side of waveguide.The stress distribution and effective refractive index of waveguide fabricated by this approach are calculated using finite element and finite difference beam propagation method,respectively.The results of these studies indicate that the stress of silica on silicon optical waveguide can be matched in parallel and vertical direction and AWG polarization dependent wavelength (PDλ) can be reduced effectively due to side-silicon layer.

Fabrication of a SOI Based Channel-shifted Multimode Interference Coupler

A silicon-on-insulator based channel-shifted multimode interference coupler is designed and fabricated. A two dimensional beam propagation method is used to analyze the dependence of coupler′s performances on the width and length of the multimode waveguide. The device fabricated has a power shift ratio of 73 and an excess loss of about 2.2 dB. An enhancement of fabrication accuracies could further improve the coupler performances.

High-speed electrooptical VOA integrated in silicon-on-insulator

In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) inte-grated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption toachieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simu-lation tool PISCES-Ⅱ were used to analyze the dc and transient characteristics of the device. The devicehas a response time (including rise time and fall time) less than 200 ns, much faster than the thermoopticand micro-electromechanical systems (MEMSs) based VOAs.

Multimode Interference Couplers with Different Background Refractive Index *

A novel structure of MMI coupler with different background refractive index has been designed. With stronger optical confinement in multimode waveguides, more guided modes are excited to improve imaging quality. Two-dimensional finite difference beam propagation method (2-D FDBPM) was used to simulate this new structure and had proven that its imaging quality, in terms of power uniformity and excess loss, is much better than conventional structure. This structure can be applied in SOI rib waveguides by deep etching method.

Simulation and fabrication of thermo-optic variable optical attenuators based on multimode interference coupler

A type of thermo-optic variable optical attenuator based on multimode interference coupler is proposed. The optical field propagation properties of the devices are simulated using finite difference beam propagation method. The propagation loss of the fabricated device is 2-4.2 dB at the wavelength range 1510-1610 nm. The total power consumption is 370 mW and the maximum attenuation is more than 25 dB, which almost can meet the requirements of optical fiber communication systems.

Study of the νi13/2－1 band in 189Pt

High-spin levels of 189Pt have been studied with the in-beam γ-spectroscopy method via the 176Yb(18O,5n) reaction at the beam energies of 88 and 95 MeV. The previously known νi-131/2 band has been confirmed, and its unfavored signature branch extended up to the 13/2+ state. Within the framework of the triaxial particle-rotor model, the νi-113/2 band is suggested to be associated with the 11/2[615] configuration, and to have triaxial deformation.

Precision measurement of excited spectra of oxygen ions

Spectra of the ionized oxygen atom were researched with the Pro-500i monochromator equipped with CCD. The beam foil method was used at energy of 2 MeV in a 2 x 1.7 Tandem accelerator. In this work, we report 201 spectral lines determined in the region 250-350 nm, and most spectral lines were attributed to n, l energy level transitions from O II to O IV atoms. Our experimental results are in good agreement with existing theoretical calculations. Many lines reported in this paper have not been measured in past experiments, and a majority of them are week transitional lines.