Sputtering of ZnO buffer layer on Si for GaN blue light emitting materials

The preparation of high quality ZnO/Si substrates for the growth of GaN blue light emitting materials is considered. ZnO thin films have been deposited on Si(100) and Si(lll) substrates by conventional magnetron sputtering. Morphology, crystallinity and c-axis preferred orientation of ZnO thin films have been investigated by transmitting electron microscopy (TEM), X-ray diffraction (XRD) and X-ray rocking curve (XRC). It is proved that the ZnO thin films have perfect structure. The full-width-at-half-maximum (FWHM) of the ZnO(002) XRC of these films is about 1 degrees, while the minimum is 0.353 degrees. This result is better than the minimum FWHM (about 2 degrees) reported by other research groups. Moreover, comparison and discussion are given on film structure of ZnO/Si(100) and ZnO/Si(lll).

Self-organization of the InGaAs GaAs quantum dots superlattice

The mechanism of self-organization of quantum dots (QDs) during the growth of InGaAs/GaAs multilayers on GaAs (1 0 0) was investigated with cross-sectional transmission electron microscopy (XTEM), and double-crystal X-ray diffraction (DCXD). We found that the QDs spacing in the first layer can affect the vertical alignment of QDs. There seems to exist one critical lateral QD spacing, below which merging of QDs with different initial size is found to be the dominant mechanism leading to perfect vertical alignment. Once the critical value of QDs spacing is reached, the InGaAs QDs of the first layer are simply reproduced in the upper layers. The X-ray rocking curve clearly shows two sets of satellite peaks, which correspond to the QDs superlattice, and multi-quantum wells (QW) formed by the wetting layers around QDs. (C) 1999 Elsevier Science B.V. All rights reserved.

Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures

InGaAs/GaAs quantum dots (QDs) superlattice grown by molecular beam epitaxy (MBE) at different substrate temperatures for fabricating 8-12 mu m infrared photodetector were characterized by transmission electron microscopy (TEM), double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL). High-quality QDs superlattice can be achieved by higher growth temperature. Cross-sectional TEM shows the QDs in the successive layers are vertically aligned along growth direction. Interaction of partial vertically aligned columns leads to a perfect vertical ordering. With increasing number of bilayers, the average QDs size becomes larger in height and rapidly saturates at a certain value, while average lateral length nearly preserves initial size. This change leads to the formation of QDs homogeneous in size and of a particular shape. The observed self-organizations are attributed to the effect of strain distribution at QDs on the kinetic growth process. DCXRD measurement shows two sets of satellite peaks which corresponds to QDs superlattice and multi quantum wells formed by the wetting layers. Kinematical simulations of the wetting layers indicate that the formation of QDs is associated with a decrease of the effective indium content in the wetting layers. (C) 1999 Elsevier Science B.V. All rights reserved.

Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer

A transmission electron microscopy study of triple-ribbon contrast features in a ZnTe layer grown epitaxially on a vicinal GaAs (001) substrate is reported. The ribbons go through the layer as threading dislocations near the [<(11)over bar 2>](111) or [112](<(11)over bar 1>) directions. Each of these (with a 40 nm width) has two narrow parts enclosed by three partial dislocations (with a 20 nm spacing). By contrast analysis and contrast simulation, the ribbons have been shown to be composed of two partially overlapping stacking faults. Their origin is attributed to a forced reaction between two crossing perfect misfit dislocations.

Color filter-less technology of LED back light for LCD-TV - art. no. 68410G

Back Light Unit (BLU) and Color Filter are the two key components for the perfect color display of Liquid Crystal Display (LCD) device. LCD can not light actively itself, so a form of illumination, Back Light Unit is needed for its display. The color filter which consists of RGB primary colors, is used to generate three basic colors for LCD display. Traditional CCFL back light source has several disadvantages, while LED back light technology makes LCD obtain quite higher display quality than the CCFL back light. LCD device based on LED back light owns promoted efficiency of display. Moreover it can generate color gamut above 100% of the NTSC specification. Especially, we put forward an idea of Color Filter-Less technology that we design a film which is patterned of red and green emitting phosphors, then make it be excited by a blue light LED panel we fabricate, for its special emitting mechanism, this film can emit RGB basic color, therefore replace the color filter of LCD device. This frame typically benefits for lighting uniformity and provide pretty high light utilization ratio. Also simplifies back light structure thus cut down the expenses.

Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire

We have investigated the hydride vapor-phase epitaxy growth of (10 (1) over bar(3) over bar)-oriented GaN thick films on patterned sapphire substrates (PSSs) (10 (1) over bar0). From characterization by atomic force microscopy, scanning electron microscopy, double-crystal X-ray diffraction, and photoluminescence (PL), it is determined that the crystalline and optical qualities of (10 (1) over bar(3) over bar) GaN epilayers grown on the cylindrical PSS are better than those on the flat sapphire. However, two main crystalline orientations (10 (1) over bar(3) over bar) and (11 (2) over bar2) dominate the GaN epilayers grown on the pyramidal PSS, demonstrating poor quality. After etching in the mixed acids, these (10 (1) over bar(3) over bar) GaN films are dotted with oblique pyramids, concurrently lining along the < 30 (3) over bar2 > direction, indicative of a typical N-polarity characteristic. Defect-related optical transitions of the (10 (1) over bar(3) over bar) GaN epilayers are identified and detailedly discussed in virtue of the temperature-dependent PL. In particular, an anomalous blueshift-redshift transition appears with an increase in temperature for the broad blue luminescence due to the thermal activation of the shallow level.

Uniform mems chip temperatures in the nucleate boiling heat transfer region by selecting suitable, medium boiling number range

The not only lower but also uniform MEMS chip temperatures can he reached by selecting suitable boiling number range that ensures the nucleate boiling heat transfer. In this article, boiling heat transfer experiments in 10 silicon triangular microchannels with the hydraulic diameter of 55.4 mu m were performed using acetone as the working fluid, having the inlet liquid temperatures of 24-40 degrees C, mass fluxes of 96-360 kg/m(2)s, heat fluxes of 140-420 kW/m(2), and exit vapor mass qualities of 0.28-0.70. The above data range correspond to the boiling number from 1.574 x 10(-3) to 3.219 x 10(-3) and ensure the perfect nucleate boiling heat transfer region, providing a very uniform chip temperature distribution in both streamline and transverse directions. The boiling heat transfer coefficients determined by the infrared radiator image system were found to he dependent on the heat Axes only, not dependent on the mass Axes and the vapor mass qualities covering the above data range. The high-speed flow visualization shows that the periodic flow patterns take place inside the microchannel in the time scale of milliseconds, consisting of liquid refilling stage, bubble nucleation, growth and coalescence stage, and transient liquid film evaporation stage in a full cycle. The paired or triplet bubble nucleation sites can occur in the microchannel corners anywhere along the flow direction, accounting for the nucleate boiling heat transfer mode. The periodic boiling process is similar to a series of bubble nucleation, growth, and departure followed by the liquid refilling in a single cavity for the pool boiling situation. The chip temperature difference across the whole two-phase area is found to he small in a couple of degrees, providing a better thermal management scheme for the high heat flux electronic components. Chen's [11 widely accepted correlation for macrochannels and Bao et al.'s [21 correlation obtained in a copper capillary tube with the inside diameter of 1.95 mm using R11 and HCFC123 as working fluids can predict the present experimental data with accepted accuracy. Other correlations fail to predict the correct heat transfer coefficient trends. New heat transfer correlations are also recommended.

Are the available boiling heat transfer coefficients suitable for silicon microchannel heat sinks?

The typical MEMS fabrication of micro evaporators ensures the perfect smooth wall surface that is lack of nucleation sites, significantly decreasing the heat transfer coefficients compared with miniature evaporators fabricated using copper or stainless steel. In the present paper, we performed the boiling heat transfer experiment in silicon triangular microchannel heat sink over a wide parameter range for 102 runs. Acetone was used as the working fluid. The measured boiling heat transfer coefficients versus the local vapor mass qualities are compared with the classical Chen’s correlation and other correlations for macro and miniature capillary tubes. It is found that most of these correlations significantly over-predict the measured heat transfer coefficients. New correlations are given. There are many reasons for such deviations. The major reason is coming from the perfect smooth silicon surface that lowers the heat transfer performances. New theory is recommended for the silicon microchannel heat sink that should be different from metallic capillary tubes.

Periodic bubble emission and appearance of an ordered bubble sequence (train) during condensation in a single microchannel

Condensation of steam in a single microchannel, silicon test section was investigated visually at low flow rates. The microchannel was rectangular in cross-section with a depth of 30 pm, a width of 800 mu m and a length of 5.0 mm, covered with a Pyrex glass to allow for visualization of the bubble formation process. By varying the cooling rate during condensation of the saturated water vapor, it was possible to control the shape, size and frequency of the bubbles formed. At low cooling rates using only natural air convection from the ambient environment, the flow pattern in the microchannel consisted of a nearly stable elongated bubble attached upstream (near the inlet) that pinched off into a train of elliptical bubbles downstream of the elongated bubble. It was observed that these elliptical bubbles were emitted periodically from the tip of the elongated bubble at a high frequency, with smaller size than the channel width. The shape of the emitted bubbles underwent modifications shortly after their generation until finally becoming a stable vertical ellipse, maintaining its shape and size as it flowed downstream at a constant speed. These periodically emitted elliptical bubbles thus formed an ordered bubble sequence (train). At higher cooling rates using chilled water in a copper heat sink attached to the test section, the bubble formation frequency increased significantly while the bubble size decreased, all the while forming a perfect bubble train flowing downstream of the microchannel. The emitted bubbles in this case immediately formed into a circular shape without any further modification after their separation from the elongated bubble upstream. The present study suggests that a method for controlling the size and generation frequency of microbubbles could be so developed, which may be of interest for microfluidic applications. The breakup of the elongated bubble is caused by the large Weber number at the tip of the elongated bubble induced by the maximum vapor velocity at the centerline of the microchannel inside the elongated bubble and the smaller surface tension force of water at the tip of the elongated bubble.

Magnetoexcitonic optical absorption in semiconductors under strong magnetic fields and intense terahertz radiation in the Voigt configuration

The magnetoexcitonic optical absorption of a GaAs bulk semiconductor driven by a terahertz (THz) field is investigated numerically. The method of the solution of the initial-value problem, in combination with the perfect matched layer technique, is used to calculate the optical susceptibility, with Coulomb interaction, Landau quantization, and THz fields involved nonperturbatively. It shows that there appear replicas and sidebands of magnetoexciton of different Landau levels, which greatly enrich the magneto-optical spectrum in the presence of a driving THz field. Copyright (C) EPLA, 2008.

Excitonic optical absorption in semiconductors under intense terahertz radiation

The excitonic optical absorption of GaAs bulk semiconductors under intense terahertz (THz) radiation is investigated numerically. The method of solving initial-value problems, combined with the perfect matched layer technique, is used to calculate the optical susceptibility. In the presence of a driving THz field, in addition to the usual exciton peaks, 2p replica of the dark 2p exciton and even-THz-photon-sidebands of the main exciton resonance emerge in the continuum above the band edge and below the main exciton resonance. Moreover, to understand the shift of the position of the main exciton peak under intense THz radiation, it is necessary to take into consideration both the dynamical Franz-Keldysh effect and ac Stark effect simultaneously. For moderate frequency fields, the main exciton peak decreases and broadens due to the field-induced ionization of the excitons with THz field increasing. However, for high frequency THz fields, the characteristics of the exciton recur even under very strong THz fields, which accords with the recent experimental results qualitatively.

黄土高原半干旱区农田干旱防御与抗旱措施

系统分析农田抗旱管理与相应措施对黄土高原半干旱区社会和经济的协调健康发展以及粮食安全具有重要意义。黄土高原半干旱区干旱发生的特点决定了农田抗旱管理的复杂性和艰巨性。论文阐述了农田抗旱管理中防、抗与避三种措施的主要内容,并就农田抗旱管理系统进行了介绍。认为通过建立完善的农业技术推广服务体系和针对地区特点的抗旱管理措施,是半干旱区农业可持续发展一项重要而积极的对策,不仅需要从资金和政策上给予扶持和倾斜,更需要在管理机制上予以重视。

X-RAY-SCATTERING FROM A ROUGH-SURFACE AND DAMAGED LAYER OF POLISHED WAFERS

Theoretical and experimental investigations were performed to show the application of x-ray crystal truncation rod scattering combined with x-ray reflectivity in the measurements of surface roughness and near-surface damage of mechanochemically polished wafers. By fitting the measured crystal truncation rod curves it has been shown that polished wafers are divided into three parts -irregular steps on the surface, a damaged thin layer beneath the surface and a perfect bulk. The results show that the root mean square of the surface roughness of mechanochemically polished Fe-doped and/or S-doped InP wafers is one to two atom layers, and that the lateral correlation length of the surface roughness is about 3000-7500 Angstrom. The thickness of the damaged region is found to be about 1000 atom layers.

THE MATRIX ANALYSIS FOR AN OPTICAL FREE-SPACE SWITCHING NETWORK AND AN OPTICAL CROSSOVER NETWORK WITH 4-FUNCTION INTERCHANGE NODES

A matrix analysis for free-space switching networks, such as perfect shuffle-exchange omega, crossover and Banyan is presented. On the basis of matrix analysis, the equivalence of these three switching networks and the route selection between input and output ports are simply explained. Furthermore, an optical crossover switching network, where MQW SEED arrays are used as electrically addressed four-function interchange nodes, is described and the optical crossover interconnection of 64 x 64, and high-speed four-function, interchange nodes is demonstrated in the experiment.

HIGH-QUALITY INGAP AND INGAP/INALP MULTIPLE-QUANTUM-WELL GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Using gas-source molecular beam epitaxy, we have obtained high-quality GaInP and (AlGa)InP epilayers lattice-matched to (100) GaAs substrates. All grown layers exhibited mirror-like surfaces. For a 1.7 mum thick Ga0.5In0.5P film, the Hall electron mobility was 3400 and 30,000 CM2/V. s at 300 and 77 K, respectively. The luminescence wavelength of (AlxGa1-x)InP samples ranged from 680 nm (for GaInP) to 590 nm (for AlInP) at room temperature, and from 644 to 513 nm at 77 K. The multiple quantum well (MQW) structure with well width of 40 angstrom showed strong luminescence intensity with wavelength of 647 nm (300 K) or 622 nm (80 K). The satellite peaks can be detected in double-crystal X-ray (DCXR) diffraction measurements of the MQW samples, which indicates the perfect structural periodicity.