147 resultados para Pb
Resumo:
本文报道了利用兰州重离子加速器国家实验室的ECR离子源引出的高电荷态离子207Pb36+入射到金属Nb表面产生的二次离子的实验测量结果.实验发现,二次离子产额Y随入射初动能Ek的增加有先增加后减小的关系,在初动能为576 keV时二次离子产额达到最大.通过对实验点做高斯拟合发现,曲线峰值对应的入射初动能为602 keV.分析表明,这是势能沉积作用与线性级联碰撞过程协同作用的结果.高电荷态离子本身携带的高势能沉积在靶表面引起势能溅射,促进了二次离子的发射;而主导二次离子溅射的过程是动能溅射,它与靶表面的动量沉积(核能损)过程密切相关.
Resumo:
报道了利用兰州重离子加速器国家实验室ECR源引出的高电荷态离子207Pbq+(24≤q≤36)入射到Si(110)表面产生的电子发射的实验测量结果.结果表明,高电荷态离子与固体表面相互作用产生的电子发射产额Y与入射离子的电荷态q、入射角度ψ和入射能量E都有很强的关联.首次发现,电子发射产额Y与入射角度ψ间有接近1/tanψ的关系.理论分析认为,这些过程与基于经典过垒模型的势能电子发射过程密切相关.
Resumo:
主要研究了110keV的He~+高温注入Al_2O_3单晶及1.1MeV/u的~(208)Pb~(27+)辐照注氦Al_2O_3样品的光致发光的特性。从测试结果可以清楚地看到在375nm,413nm和450nm处出现了强烈的发光峰。并且在600K,5×10~(16) ions/cm~2剂量点,样品的发光峰是最强的。这表明He~+注入Al_2O_3后使带隙中深的辐射中心复合的效率大幅度提高,极大的增强了其发光强度,而且发光伴随着蓝移现象。而经过高能~(208)Pb~(27+)辐照后的样品,在390nm出现了新的发光峰,从FTIR谱中我们能够看到,可能是~(208)Pb~(27+)辐照相对沉积膜出现一定的晶化,其中含有许多纳米尺寸的Al_2O_3晶粒所致。
Resumo:
介绍了一种弧形靶框夹芯208Pb靶的制备工艺,包括核靶的制备装置和制备方法、核靶厚度和均匀性的控制和测量方法,并对结果进行了讨论。制备采用旋转蒸镀法,该法可以大大提高材料的利用率。所制靶的结构为30μg/cm2C+361μg/cm2208Pb+15μg/cm2C,同一次所制的靶平均厚度为361μg/cm2,不均匀性小于9.8%。其性能能够很好地满足超重核实验研究的要求。
Resumo:
随着原子物理及表面物理研究的发展,高电荷态金属离子束的需求日益增多.近来,在中国科学院近代物理研究所14.5GHzLECR3离子源实验平台上,以炉子法产生的铅离子束作为研究对象,进行了一系列ECR离子源关键参数(如:磁场、炉子功率、掺气等)影响高电荷态铅离子束产额的实验研究,在此基础上,调整优化了LECR3离子源的状态参数,从而获得了强流高电荷态铅离子束18eμA207pb30+和6.7eμA207pb37+.
Resumo:
室温下,先用120keV的C离子注入二氧化硅薄膜样品至剂量2.0×1017,5.0×1017或8.6×1017ions/cm2,再用950MeV的Pb离子分别辐照至剂量5.0×1011,1.0×1012或3.8×1012ions/cm2,然后测量样品的傅里叶变换红外(FTIR)光谱.通过分析测量得到的傅里叶变换红外谱,发现Pb离子辐照在注碳SiO2样品中可引起大量的Si—C和Si(C)—O—C等化学键的形成,大剂量Pb离子辐照可在大剂量注碳的SiO2中产生分子CO2.大量的Si—C键的存在和分子CO2的形成,预示着高能Pb离子辐照在注碳SiO2样品中有可能形成了纳米Si团簇和/或SiC晶粒.
Resumo:
IEECAS SKLLQG
Resumo:
IEECAS SKLLQG
Resumo:
采用滚压法制备Tb靶,采用滚压法或真空蒸发法制得Pb膜,两者通过滚压或真空蒸发法结合制得了带Pb村的Tb薄靶。
Resumo:
用半经典模型考虑20Na+208Pb→p+19Ne+208Pb的Coulomb解离过程。用MonteCarlo方法计算前角放置的望远镜阵列对Coulomb解离碎片的探测效率。讨论了天体环境下p+19Ne→20Na俘获反应道的低能级共振截面测量的可行性。
Resumo:
Highly charged ions (HCls) carrying high Coulomb potential energy (E-p) could cause great changes in the physical and chemical properties of material surface when they bombard on the solid surface. In our work, the secondary ion yield dependence on highly charged Pbq+ (q = 4-36) bombardment on Al surface has been investigated. Aluminum films (99.99%) covered with a natural oxide film was chosen as our target and the kinetic energy (E-k) was varied between 80 keV and 400 keV. The yield with different incident angles could be described well by the equation developed by us. The equation consists of two parts due to the kinetic sputtering and potential sputtering. The physical interpretations of the coefficients in the said equation are discussed. Also the results on the kinetic sputtering produced by the nuclear energy loss on target Surface are presented.
Resumo:
Surface change of gallium nitride specimens after bombardment by highly charged Pbq+-ions (q = 25, 35) at room temperature is studied by means of atomic force microscopy. The experimental results reveal that the surface of GaN specimens is significantly etched and erased. An unambiguous step-up is observed. The erosion depth not only strongly depends on the charge state of ions, but also is related to the incident angle of Pbq+-ions and the ion dose. The erosion depth of the specimens in 60 incidence (tilted incidence) is significantly deeper than that of the normal incidence. The erosion behaviour of specimens has little dependence on the kinetic energy of ion (E-k = 360, 700 keV). On the other hand, surface roughness of the irradiated area is obviously decreased due to erosion compared with the un-irradiated area. A fiat terrace is formed.