231 resultados para Neodymium-doping


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Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect, current-voltage (I-V), photoluminescence spectroscopy (PL) and photocurrent spectroscopy (PC) measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration. Fe doping concentration also influences optical properties and defective formation in as-grown SI InP. Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PI and PC.

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Low resistivity of p-type Mg-doped AlGaN/GaN superlattices (SLs) is demonstrated. The resistivity of the SLs is less than 0.6 Omega .cm. and the measured hole concentration is higher than 1x10(18)cm(-3). The resistivity of SLs is much lower, and the hole concentration of SLs is much higher, than that of bulk GaN and AlGaN, The electrical properties of the SLs are less sensitive than the conventional bulk lavers.

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Indium (In)-doping was applied in GaN layers during growth of AlGaN/GaN heterostructure with unintentionally doped or modulation Si-doped AlGaN layers. It was found that In-doping was effective in improving electron sheet density of two-dimensional-electron-gas (2DEG) in the heterostructures. Furthermore, In-doping also improved mobility in heterostructures with Si modulation-doped in AlGaN layers. The possible reasons were discussed. X-ray diffraction (XRD) and wet chemical etching revealed that crystalline quality of GaN was improved by In-doping. It was proposed that In-doping modified growth kinetics of GaN.

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The heteroepitaxial growth of n-type and p-type 3C-SiC on (0001) sapphire substrates has been performed with a supply of SiH4+C2H4+H-2 system by introducing ammonia (NH3) and diborane (B2H6) precursors, respectively, into gas mixtures. Intentionally incorporated nitrogen impurity levels were affected by changing the Si/C ratio within the growth reactor. As an acceptor, boron can be added uniformly into the growing 3C-SiC epilayers. Nitrogen-doped 3C-SiC epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated.

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The effects of in situ annealing treatment in the initial growth stage and In-doping during growth of the GaN on the material properties were investigated. GaN was grown by LP-MOVPE. In situ annealing reduced the full-width at half-maximum (FWHM) of X-ray rocking curves and reduced etch pit density of GaN films. It improved the optical properties of the epilayer. Undoped and In-doped GaN films of initial growth stage were investigated. It was found that morphology and optical properties were improved in In-doped samples. (C) 2000 Elsevier Science B.V. All rights reserved.

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考察了陈化温度对新癸酸钕(简称Nd)、氢化二异丁基铝(简称Al)和氯化二异丁基铝(简称Cl)组成的催化剂共聚合丁二烯-异戊二烯的影响。结果表明,催化剂的陈化温度对聚合产物的相对分子质量分布有明显的影响,采用较高陈化温度(50℃)所得催化剂,在催化剂3组分的加入顺序为Al、Cl、Nd或Cl、Nd、Al时,可获得窄相对分子质量分布(小于3.00)共聚物;催化剂3组分的加入顺序和陈化温度对共聚物的微观结构影响不大,2种单体单元的顺式-1,4-结构摩尔分数均在98%以上

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(Y0.95Ln(0.01)Ce(0.04))(3)Al5O12 phosphors were synthesized by high-temperature solid state reaction under reducing atmosphere and the doping effects of lanthanide ions (Ln(3+)) on the luminescence properties of phosphors were studied. YAG: Ce, Ln spectra of excitation and emission show that the influence between Ce3+ and Ln(3+) can be divided into the following three types

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Nd2CexO3+2x (x = 2.25, 2.5, 2.75, 3.0) were synthesized by solid-state reaction, and their phase stabilities and thermophysical properties were investigated. The X-ray diffraction (XRD) results indicated that Nd2CexO3+2x with fluorite structure were stable after long-term annealing at 1673 K. They have higher thermal expansion coefficients (TECs) than yttria-stabilized zirconia (YSZ) which is the typical thermal barrier coating (TBC) material, especially the thermal expansion as a function of temperature is parallel to that of the nickel-based superalloy.

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BACKGROUND: Thermodynamics and kinetics data are both important to explain the extraction property. In order to develop a novel separation technology superior to current extraction systems, many promising extractants have been developed including calixarene carboxylic acids. The extraction thermodynamics behavior of calix[4]arene carboxylic acids has been reported extensively. In this study, the mass transfer kinetics of neodymium(III) and the interfacial behavior of calix[4]arene carboxylic acid were investigated.

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Reactions of Ln(III) acetate (Ln = Pr and Nd) and a polydentate Schiff-base in a mixture of methanol and acetonitrile resulted in the unprecedented assembly of novel Ln(10) aggregates containing two Ln(5) pentagons templated by mu(5)-CO32-, introduced via spontaneous fixation of atmospheric carbon dioxide. Magnetic analysis using an expression including the ligand field effects and molecular field approximation indicates weak antiferromagnetic coupling between the metal ions. This synthetic approach may represent a promising new route toward the design of new lanthanide clusters and novel multifunctional materials.

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Highly uniform and well-dispersed CeO2 and CeO2:Eu3+ (Sm3+, Tb3+) nanocrystals were prepared by a nonhydrolytic solution route and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectra (XPS), UV/vis absorption, and photoluminescence (PL) spectra, respectively. The result of XRD indicates that the CeO2 nanocrystals are well crystallized with a cubic structure. The TEM images illustrate that the average size of CeO2 nanocrystals is about 3.5 nm in diameter. The absorption spectrum of CeO2:Eu3+ nanocrystals exhibits red-shifting with respect to that of the undoped CeO2 nanocrystals. Under the excitation of 440 nm (or 426 nm) light, the colloidal solution of the undoped CeO2 nanocrystals shows a very weak emission band with a maximum at 501 nm, which is remarkably enhanced by doping additional lanthanide ions (Eu3+, Tb3+, Sm3+) in the CeO2 nanocrystals. The emission band is not due to the characteristic emission of the lanthanide ions but might arise from the oxygen vacancy which is introduced in the fluorite lattice of the CeO2 nanocrystals to compensate the effective negative charge associated with the trivalent ions.

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Soluble NdCl3 center dot 3EHOH (2-ethyl hexanol) in hexane combined with AlEt3 is highly active for isoprene polymerization in hexane. The NdCl3 center dot 3EHOH/AlEt3 has higher activity than the typical binary catalyst NdCl3 center dot 3(i)PrOH (isopropanol)/AlEt3 and ternary catalyst NdV3 (neodymium versatate)/AlEt2Cl/Al(i-Bu)(2)H. The molecular weight of polyisoprenes can be controlled by variation of [Nd], [Al]/[Nd] ratio and polymerization temperature and time. The NdCl3 center dot 3EHOH/AlEt3 catalyst polymerized isoprene to afford products featuring high cis-1,4 stereospecificity (ca. 96%), high molecular weight (ca. 10(5)) and relatively narr ow molecular weight distributions (M-w/M-n = 2.0-2.8) simultaneously. More importantly, some living polymerization characteristics were demonstrated: (a) absence of chain termination; (b) linear correlation between M-n and polymer yield; (c) increment of molecular weight in the 'seeding' polymerization. Though some deviation from the typical living polymerization such as molecular weight distribution is not narrow enough and the line of M-n and polymer yield does not extrapolate to zero, controlled polymerization with the current catalyst can still be concluded.

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The Ba2GdNbO6: Eu3+/Dy3+ and Li+-doped Ba2GdNbO6: Eu3+/Dy3+ phosphors were prepared by solid-state reaction process. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and photoluminescence (PL) as well as lifetimes, was utilized to characterize the resulting phosphors. Under the excitation of ultraviolet light, the Ba2GdNbO6: Eu3+/Dy3+ and Li+-doped Ba2GdNbO6: Eu3+/Dy3+ show the characteristic emissions of Eu3+ (D-5(0)-F-7(1,2,3) transitions dominated by D-5(0)-F-7(1) at 593 nm) and Dy3+ (F-4(9/2)-H-6(15/2),(13/2) transitions dominated by F-4(9/2)-H-6(15/2) at 494 nm), respectively. The incorporation of Li+ ions into the Ba2GdNbO6: Eu3+/Dy3+ phosphors has enhanced the PL intensities depending on the doping concentration of Li+, and the highest emission was obtained in Ba2Gd0.9NbO6: 0.10Eu(3+), 0.01Li(+) and Ba2Gd0.95NbO6: 0.05Dy(3+), 0.07Li(+), respectively. An energy level diagram was proposed to explain the luminescence process in the phosphors.