74 resultados para Lateral-torsional Buckling
Resumo:
The mechanism of beam splitting and principle of wide-field-of-view compensation of modified Savart polariscope in the wide-field-of-view polarization interference imaging spectrometer (WPIIS) are analyzed and discussed. Formulas for the lateral displacement and optical path difference (OPD) produced by the modified Savart polariscope are derived by ray-tracing method. The theoretical and practical guidance is thereby provided for the study, design, modulation, experiment and engineering of the polarization interference imaging spectrometers and other birefringent Fourier-transform spectrometers based on Savart polariscopes. (c) 2006 Elsevier B.V. All rights reserved.
Resumo:
A theoretical study is presented of the lateral confinement potential (CP) in the very narrow mesa channels fabricated in the conventional two-dimensional (2D) electron gas in GaAs-AlxGa1-xAs heterostructures. The ID electronic structures are calculated in the framework of the confinement potential: V(x) = m* omega0(2)x2/2 for Absolute value of x
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The electronic structures of quantum wires formed by lateral strain are studied in the framework of the effective-mass envelope-function method. The hole energy levels, wave functions, and optical transition matrix elements are calculated for the real quantum-wire structure, and the results are compared with experiment. It is found that one-dimensional confinement effects exist for both electronic and hole states related to the n (001) = 1 state. The lateral strained confinement causes luminescence-peak redshifts and polarization anisotropy, and the anisotropy is more noticeable than that in the unstrained case. The variation of hole energy levels with well widths in the [110] and [001] directions and wave vector along the [110BAR] direction are also obtained.
Resumo:
In this work we investigate the lateral periodicity of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of X-ray scattering techniques. The multilayers were grown by metalorganic Vapour phase epitaxy on (001)GaAs substrates, which were intentionally off-oriented towards the [011]-direction. The substrate off-orientation and the strain distribution was found to affect the structural properties of the superlattices inducing the generation of laterally ordered macrosteps. Several high-resolution triple-crystal reciprocal space maps, which were recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction and contour maps of the specular reflected beam collected in the vicinity of the (000) reciprocal lattice point, are reported and discussed. The reciprocal space maps clearly show a two-dimensional periodicity of the X-ray peak intensity distribution which can be ascribed to the superlattice periodicity in the direction of the surface normal and to a lateral periodicity in a crystallographic direction coinciding with the miscut orientation. The distribution and correlation of the vertical as well as of the lateral interface roughness was investigated by specular reflectivity and diffuse scattering measurements. Our results show that the morphology of the roughness is influenced by the off-orientation angle and can be described by a 2-dimensional waviness.
Resumo:
A theoretical investigation of ballistic electron transport in a quantum wire with soft wall confinement is presented. A general method of the electron transmission calculation is proposed for structures with complicated geometries. The effects of the lateral guiding potential on ballistic transport are investigated using three soft wall confinement models and the results are compared with those obtained from the hard wall confinement approximation. It is shown that the calculated transmission coefficients are notably dependent on the lateral confining potential especially when the incident electron energy is larger than the energy of the second transverse mode. It is found that the transmission profile obtained from soft wall confinement models exhibits simpler resonance structures than that obtained from the hard wall confinement approximation. Our results suggest that only in the single-channel regime the hard wall confinement approximation can give reasonable results.
Resumo:
High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth. AFM,wet chemical etching, and TEM experiments show that with a two-step ELOG procedure, the propagation of defects under the mask is blocked, and the coherently grown GaN above the window also experiences a drastic reduction in defect density. In addition, a grain boundary is formed at the coalescence boundary of neighboring growth fronts. The extremely low density of threading dislocations within wing regions makes ELOG GaN a potential template for the fabrication of nitride-based lasers with improved performance.
Resumo:
We proposed a new method to suppress the crystallographic tilt in the lateral epitaxial overgrowth of GaN by using an oxide mask with a newly designed pattern. A rhombus mask with edges oriented in the direction of <10 - 10>(GaN) was used instead of the traditional stripe mask. The morphology evolution during the LEO GaN with the rhombus mask was investigated by SEM, and the crystallographic tilt in the LEO GaN was measured by DC-XRD. It is found that using the new rhombus mask can decrease the crystallographic tilt in the LEO GaN. In addition, this method makes the ELO GaN stripes easy to coalesce. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Resumo:
The lateral habits of low molecular weight short chain branched polyethylene single crystals from the melt were studied. Three crystallization temperatures (102, 104 and 106 degrees C) were selected for single crystal growth. It was found that the lateral habits of single crystals were asymmetric at all the crystallization temperatures selected. The electron diffraction patterns and tilting series experiments evidenced that there existed chain tilting in all the lamellae. It was the chain tilting that lead to the asymmetry of the growth rate and of lateral habits of the single crystals about the b-axis. The lateral habits substantially changed from the growth at 102 degrees C where the truncated lozenge single crystals formed with straight (110) faces to the growth at 104 degrees C where the lenticular single crystals appeared. This change occurred at 20 degrees C lower than that in a low molecular weight linear polyethylene with the same molecular weight. Furthermore, kinetics theory analysis evidenced that the change of lateral habits from truncated lozenge to lenticular shape resulted from the transition of growth regime. The results were the same as that of high molecular weight linear polyethylene but different to that of low molecular weight linear polyethylene. It may be attributed by the existence of short branched chains. (C) 2000 Elsevier Science Ltd. All rights reserved.
Resumo:
The banded textures in the films of a thermotropic liquid crystalline poly(aryl ether ketone) containing a lateral chloro group have been studied by means of transmission electron microscopy(TEM), electron diffraction(ED) and atomic force microscopy (AFM). The crystallization-induced Landed texture without external shear can be formed when the thin films were annealed at the temperature range(320-330 degrees C) of the liquid crystalline state from the melt, The results show that the banded regions have high orientation of single crystal based on the orthorhombic packing and the growing direction of the Lands is along the b axis of the crystals, This kind of single crystal-like bands is due to the different orientation of the packing molecular chains, The molecular chains of the dark bands in the bright field electron micrograph are perpendicular to the film plane, while the ones of the bright Lands are tilt along the b axis with the tilt angle upto +/-20 degrees.
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Novel poly(aryl ether ketone)s containing a lateral methoxy group were synthesized by nucleophilic substitution reactions of 4,4'-biphenol and methoxyhydroquinone with 1,4-bis(4-fluorobenzoyl)benzene in a sulfolane solvent in the presence of anhydrous potassium carbonate. Their thermotropic liquid crystalline properties were characterized by a variety of experimental techniques, e.g. differential scanning calorimetry (DSC), polarized light microscopy and temperature-dependent FTIR. Thermotropic liquid crystalline behaviour was observed in the copolymers containing 30-80 mol-% mexthoxyhydroquinone. Both melting (T-m) and isotropization (T-i) transitions appeared in the DSC curves. The polarized light microscopy study of the liquid crystalline copolymers suggested their ordered smectic structures. As expected, the copolymers had lower melting transitions than the biphenol-based homopoly(aryl ether ketone)s because of the copolymerization effect of the crystal-disrupting monomer methoxyhydroquinone.
Resumo:
Novel main chain poly(aryl ether ketone)s containing a lateral phenyl group were synthesized by nucleophilic substitution reactions of 4,4'-biphenol and phenylhydroquinone with either 4,4'-difluorobenzophenone or 1,4-bis(4-fluorobenzoyl)benzene and their thermotropic liquid crystalline properties were characterized by a variety of experimental techniques. Thermotropic liquid crystalline behaviour was observed in the copolymers containing 50 and 70mol% biphenol. Melting (T-m) and isotropization (T-i) transitions both appeared on the DSC thermograms. A banded texture was formed after shearing the sample in the liquid crystalline nematic state. As expected, each of the copolymers had a relatively lower melting transition than the biphenol-based homopoly(aryl ether ketone)s because of the copolymerization effect of the crystal-disrupting monomer phenylhydroquinone.
Resumo:
Polypyrrole doped with p-toluenesulfonate was electropolymerized onto highly oriented pyrolytic graphite (HOPG), glassy carbon (GC) and Pt electrode surfaces under the same experimental conditions. The resulting films were studied by scanning tunneling m