Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology

Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well. (c) 2005 Optical Society of America.

Fabrication of fused silica phase gratings with inductively coupled plasma technology

Inductively coupled plasma (ICP) technology is a new advanced version of dry-etching technology compared with the widely used method of reactive ion etching (RIE). Plasma processing of the ICP technology is complicated due to the mixed reactions among discharge physics, chemistry and surface chemistry. Extensive experiments have been done and microoptical elements have been fabricated successfully, which proved that the ICP technology is very effective in dry etching of microoptical elements. In this paper, we present the detailed fabrication of microoptical fused silica phase gratings with ICP technology. Optimized condition has been found to control the etching process of ICP technology and to improve the etching quality of microoptical elements greatly. With the optimized condition, we have fabricated lots of good gratings with different periods, depths, and duty cycles. The fabricated gratings are very useful in fields such as spectrometer, high-efficient filter in wavelength-division-multiplexing system, etc..

低损耗有机无机混合溶胶凝胶波导的实验研究

利用有机无机混合的溶胶凝胶方法在硅基底上制备波导薄膜．采用正硅酸四乙酯和苯基三乙氧基硅烷作为反应先驱物，利用旋涂的方法成膜，对其折射率，传输损耗以及条形波导的光刻、刻蚀特性进行了研究．测量了波导薄膜折射率随成分变化的关系．实验表明，该方法工艺简单，可以获得具有较低损耗的波导薄膜．测试得到632．8nm波段的损耗系数为0．23dB／cm．采用ICP刻蚀工艺获得了较为平整的条形波导．

利用有机-无机溶胶-凝胶方法制备平面波导环形谐振腔

采用简单的有机一无机混合的溶胶一凝胶方法制备了折射率在一定范围内可调的波导材料，并利用其制备了平面波导环形谐振腔器件。波导结构呈现倒脊形，其制备工艺首先是利用感应耦合等离子体刻蚀技术（ICP）在二氧化硅衬底上刻蚀波导结构的凹槽，然后再沉积波导薄膜。利用光谱仪对器件的传输特性进行了测量，观测到具有10dB对比度，自由光谱范围0．182nm周期性谐振现象，结合环形谐振腔的传输特性，得到环形腔具有较低的传输损耗1．7dB／cm。同时对环形谐振腔的温度特性进行了测量，得出波导材料的热光系数为-1．54×10^-4

深刻蚀高密度熔融石英光栅

深刻蚀高密度熔融石英光栅是一种新型高效的衍射光学元件，具有衍射效率高、成本低、抗损伤，能在高强度激光条件下工作等优点。给出了利用感应耦合等离子体（ICP）技术制作熔融石英深刻蚀光栅的详细过程，并在一定的优化条件下制作了一系列不同周期、开口比和深度的高质量深刻蚀石英光栅。实验得到的最大刻蚀深度为4μm，并且在600l／mm的高密度条件下得到了刻蚀深度为1．9μm的高深宽比石英光栅。光栅侧壁陡直，表面平整，没有聚合物沉积。所制作的熔融石英光栅元件在高强激光环境、光谱仪、高效滤波器和波分复用系统等领域中有非常广

Deep silicon grating as high-extinction-ratio polarizing beam splitter

A deep binary silicon grating as high-extinction-ratio reflective polarizing beam splitter (PBS) at the wavelength of 1550 nm is presented. The design is based on the phenomenon of total internal reflection (TIR) by using the rigorous coupled wave analysis (RCWA). The extinction ratio of the rectangular PBS grating can reach 2.5×105 with the optimum grating period of 397 nm and groove depth of 1.092 μm. The effciencies of TM-polarized wave in the 0th order and TE-polarized wave in the −1st order can both reach unity at the Littrow angle. Holographic recording technology and inductively coupled plasma (ICP) etching could be used to fabricate the silicon PBS grating.

Origin of Chinese ancient glasses;study on the earliest Chinese ancient glasses

The earliest Chinese ancient glasses before the West Han Dynasty (200 BC) from different regions are studied. The glass samples were unearthed from Hunan, Hubei, Yunnan, Sichuan, Guizhou, Guangdong and Xinjiang of China. The chemical composition of these glasses samples is analyzed by proton induced X-ray emission (PIXE) technique, energy dispersive X-ray fluorescence (EDXRF) method and inductively coupled plasma atomic emission spectrometry (ICP-AES). It is shown that the glass chemical compositions belong to barium-lead silicate BaO-PbO-SiO2, potash soda lime silicate K2O (Na2O)-CaO-SiO2 (K2O/Na2O > 1), soda potash lime silicate Na2O (K2O)-CaO-SiO2 (K2O/Na2O < 1) and potash silicate K2O-SiO2 glass systems, respectively. The origins of the earliest Chinese ancient glasses are discussed from the archaeological and historical points of view. These four types of Chinese ancient glasses were all made in Chinese territory using local raw materials. The glass preparation technology was related to the Chinese ancient bronze metallurgy and proto-porcelain glaze technology. The glass technology relationship between the East and the West is analyzed at the same time.

中国出土的一批战国古玻璃样品化学成分的检测

对化学成分体系的确定是中国古代玻璃研究中很重要的一个方面，为此，用外束质子激发X荧光技术（PIXE）、电感耦合等离子体原子发射光谱分析（ICP-AES）等方法，对新疆、湖北、河南和重庆等地区出土的一批战国时期的玻璃珠（包含镶嵌玻璃珠）、玻璃璧样品进行了检测。结果表明，战国时期中国境内同时存在PbO-BaO-siO2、K2O-SiO2、Na2O-CaO-SiO2三种硅酸盐玻璃，分布的地域范围从中国的新疆东部一直到长江、黄河流域，以及南方的四川、贵州等地区。中国古代的PbO-BaO-SiO2和K2O-SiO玻

广西合浦地区出土汉代古玻璃的质子激发X荧光分析

采用改进的外束质子激发x射线荧光、电感耦合等离子体原子发射光谱分析等技术，对广西合浦地区出土的一批汉代古玻璃样品的化学成分和结构特性等进行了检测。结果表明：两汉时期，合浦地区的古代玻璃存在K2O—SiO2、PbO-BaO-SiO2、PbO—SiO2、Na2O-K2O-PbO-SiO2、（Na2O）K2O-CaO—SiO2等多种类型，但绝大多数为K2O—SiO2玻璃。表面风化可引起K2O-SiO2玻璃表面K2O等助熔剂的流失和富硅层的形成。综合化学成分以及器型特征，认为我国汉代K2O—SiO2玻璃制造技术可

熔制条件对铋酸盐玻璃性质的影响

采用传统的玻璃熔融法制备了组成为60Bi2O3-20B2O3-15SiO2-5La2O3(mol%)的铋酸盐玻璃， 系统研究了不同工艺过程对玻璃性能的影响. 分析了样品ICP的成分，扫描电镜，X-射线衍射谱， 差热分析和紫外-可见-近红外透过光谱测试. 结果表明：使用刚玉坩埚能提高玻璃的抗析晶稳定性 和透过率，陶瓷坩埚和白金坩埚均受到严重腐蚀，玻璃组分也随之发生很大变化. 当熔制温度从1 100 ℃变化到1 300 ℃时，玻璃的颜色从浅黄色变到深红棕色. 尤其是白金粒子被腐蚀进入玻璃液 后，玻璃中很容易形成纳米颗粒或者团聚形成胶体粒子，在玻璃中形成色散源，加深玻璃的颜色， 降低透过率. 1 300 ℃下，白金粒子起到晶核剂的作用，生成Bi2Pt2O7和BiB3O6晶相，导致玻璃失透.

Growth and spectroscopic characteristics of Yb : GSO single crystal

For the first time, a high optical quality 10 at.% Yb3+-doped gadolinium oxyorthosilicate laser crystal Gd2SiO5 (GSO) was grown by the Czochralski (Cz) method. The segregation coefficient of Yb3+ was studied by the inductively coupled plasma atomic emission spectrometer (ICP-AES) method. The crystal structure has monoclinic symmetry with space group P2(1)/c; this was determined by means of an x-ray diffraction analysis. The absorption spectra, fluorescence spectra and fluorescence decay curves of Yb3+ ions in a GSO crystal at room temperature were also studied. Then, the spectroscopic parameters of Yb:GSO were calculated. The advantages of the Yb:GSO crystal include high crystal quality, quasi-four-level laser operating scheme, high absorption cross-sections and particularly broad emission bandwidth (similar to 72 nm). The results indicated that the Yb:GSO crystal seemed to be a very promising laser gain medium in diode-pumped femtosecond laser and tunable solid state laser applications when LD pumped at 940 and 980 nm.

Ti：LiAlO2新型晶体的结构分析

通过研究提拉法生长的掺杂Ti浓度为0.2at%的LiAlO2晶体吸收光谱,荧光光谱和红外光谱,来分析此新型晶体的结构.分析发现光谱中仅出现了四价Ti离子的196nm的特征吸收峰,用235nm光激发得到384nm的特征发射峰;针对吸收光谱中660-820nm出现的四个弱小吸收峰提出了一个色心模型,从而解释了空气和富Li气氛处理后吸收峰消失的现象;对比纯LiAlO2晶体的红外光谱发现,Ti的掺入仅影响了[AlO4]键强,而[LiO4]及相关键强几乎不变;结合ICP测试估算出直径50mm,厚1mm的Ti：LiA

新型光折变晶体Mn：YAlO3的生长与光谱性质研究

采用提拉法成功生长了无散射掺杂0．5％原子分数的Mn：YAlO2（Mn：YAP）光折变单晶体，晶体尺寸约为φ25mm×47mm，原生态晶体呈桔黄色。XRD测试结果表明，Mn：YAP晶体具有与纯YAP相同的结构（Pnma）。但Mn离子掺杂后相应的晶胞参数略有减小。采用ICP方法测试计算得Mn离子在YAlO2晶体中的分凝系数约为0．11。在室温下测试了Mn：YAP晶体的吸收和荧光光谱，并初步分析了Mn：YAP晶体的光谱特征。研究表明Mn：YAP晶体中，Mn^4＋离子充当光折变中心，其吸收和发射峰分别对应于48

Czochralski growth and crystal structure of cerium-doped Lu2Si2O7 scintillator

Cerium-doped lutetium pyrosilicate crystal, Ce:Lu2Si2O7 (Ce:LPS), was grown by the Czochralski method. The segregation coefficient of Ce3+ ion was studied by the ICP-AES method. X-ray diffraction analysis showed that the structure of Ce:LPS crystal was monoclinic symmetry with space group of C2/m. Perfect cleavage planes (110) and imperfect cleavage planes (001) were observed by optical microscope. The reasons why it is difficult to grow crack-free crystals were studied. After optimized growth parameters, a Ce:LPS crystal with dimension of Phi 25 x 30 mm was grown, which is colorless, high optical quality, cracking-free and no inclusions. The transmittance of Ce:LPS crystal from 380 to 800 nm is over 82% and there is no observable absorption. (c) 2005 Elsevier B.V. All rights reserved.

Yb：FAP晶体的生长及光谱性能

应用中频感应提拉法生长出不同掺杂浓度的Yb：FAP激光晶体，运用电感耦合等离子体原子发射光谱仪（ICP-AES）测定了Yb^3＋离子存Yb：FAP晶体中的分凝系数约为0．03。随着晶体的生长，晶体中Yb^3＋离子的轴向浓度逐渐增大。研究Yb：FAP晶体在77K和300K温度下的吸收光谱发现，振动谱的变化主要是由电子-声子近共振耦合作用引起的。系统地研究了不同Yb^3＋离子掺杂浓度Yb：FAP晶体的吸收光谱和荧光光谱。通过吸收光谱的测量计算了晶体的吸收截面。Yb：FAP晶体在904nm和982nm处存在Yb