The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

We present some results on the effect of initial buffer layer on the crystalline quality of Cubic GaN epitaxial layers grown on GaAs(100) substrates by metalorganic chemical vapor deposition. Photoluminescence and Hall measurements were performed to characterize the electrical and optical properties of cubic GaN. The crystalline quality subsequently grown high-temperature (HT) cubic GaN layers strongly depended on thermal effects during the temperature ramping process after low temperature (LT) growth of the buffer layers. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to investigate this temperature ramping process. Furthermore, the role of thermal treatment during the temperature ramping process was identified. Using the optimum buffer layer, the full width at half maxim (FWHM) at room temperature photoluminescence 5.6 nm was achieved. To our knowledge, this is the best FWHM value for cubic GaN to date. The background carrier concentration was as low as 3 x 10(13) cm(-3). (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Heteroepitaxy of cubic GaN: influence of interface structure

We report on the epitaxial growth and the microstructure of cubic GaN. The layers are deposited by plasma-assisted molecular beam epitaxy on GaAs and Si substrates. Despite the extreme lattice mismatch between these materials, GaN grows in the metastable cubic phase with a well-defined orientation-relationship to the GaAs substrate including a sharp heteroboundary. The preference of the metastable phase and its epitaxial orientation originates in the interface structure which is found to be governed by a coincidence site lattice.

Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films

We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si-N bonds, and no evidence of the existence of Si-B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples.

Cubic sinusoidal phase mask: Another choice to extend the depth of field of incoherent imaging system

Wave-front coding is a well known technique used to extend the depth of field of incoherent imaging system. The core of this technique lies in the design of suitable phase masks, among which the most important one is the cubic phase mask suggested by Dowski and Cathey (1995) [1]. In this paper, we propose a new type called cubic sinusoidal phase mask which is generated by combing the cubic one and another component having the sinusoidal form. Numerical evaluations and real experimental results demonstrate that the composite phase mask is superior to the original cubic phase mask with parameters optimized and provides another choice to achieve the goal of depth extension. (C) 2009 Elsevier Ltd. All rights reserved.

Selective Synthesis of Single-Crystalline Rhombic Dodecahedral, Octahedral, and Cubic Gold Nanocrystals

This paper reports a versatile seed-mediated growth method for selectively synthesizing single-crystalline rhombic dodecahedral, octahedral, and cubic gold nanocrystals. In the seed-mediated growth method, cetylpyridinium chloride (CPC) and CPC-capped single-crystalline gold nanocrystals 41.3 nm in size are used as the surfactant and seeds, respectively. The CPC-capped gold seeds can avoid twinning during the growth process, which enables us to study the correlations between the growth conditions and the shapes of the gold nanocrystals. Surface-energy and kinetic considerations are taken into account to understand the formation mechanisms of the single-crystalline gold nanocrystals with varying shapes.

Preparation and luminescent properties of cubic Eu3+ : Y2O3 nanocrystals and comparison to bulk Eu3+ : Y2O3

Y2O3:Eu3+ nanocrystals were prepared by combustion synthesis. The particle size estimated by X-ray powder diffraction (XRD) was about 10 nm. A blue-shift of the charge-transfer (CT) band in excitation spectra was observed in Y2O3:Eu3+ nanocrystals compared with bulk Y2O3:Eu3+. The electronic structure Of Y2O3 is calculated by density functional method and exchange and correlation have been treated by the generalized gradient approximation (GGA) within the scheme due to Perdew-Burke-Ernzerhof (PBE). The calculated results show that the energy centroid of 5d orbital in nanocrystal has increasing trend compared with that in the bulk material. The bond length and bond covalency are calculated by chemical bond theory. The bond lengths of Y2O3:Eu3+ nanocrystal are shorter than those of the bulk counterpart and the bond covalency of Y2O3:Eu3+ nanocrystal also has an increasing trend. By combining centroid shift and crystal-field splitting, the blue-shift of the CT band is interpreted.

Synthesis and fluorescence of europium-doped barium fluoride cubic nanocolumns

Europium-doped barium fluoride cubic nanocolumns were synthesized from the quaternary water in oil reverse microemulsions In this process, the aqueous cores of water/cetyl trimethyl ammonium bromide (CTAB)/n-butanol/n-octane reverse microemulsions were used as microreactors for the precipitation of europium doped barium fluoride. XRD analysis shows that under the dopant concentration of 0.06% (molar fraction), the products are single phase. The result products are cubic column-like with about 30 similar to 50 nm edge length of cross section, and about 200 nm of length obtained from the transmission electron microscopy (TEM), and atomic force microscopy (AFM). Under the 0.06 % (molar fraction) of dopant concentration I the fluorescence of Eu2+ and Eu3+ under the 589 of excitation wavelength is observed.

Rapid synthesis of cubic Pt nanoparticies and their use for the preparation of Pt nanoagglomerates

We report the synthesis of hexadecyltrimethylammonium bromide (CTAB)-stabilized cubic Pt nanoparticles by NaBH4 reduction of H2PtCl6 in aqueous CTAB solution. These Pt nanoparticles (average size of 7 nm) were well dispersed in aqueous solution and stable at least for 2 months. Addition of a trace amount of AgNO3 can alter the morphology of these Pt nanoparticles. More interestingly, the as-prepared uniform Pt nanoparticles were further developed into bigger Pt nanoagglomerates (similar to 20 to 47 nm) by a seed-mediate growth process. Dentritic and spherical Pt nanoagglomerates can be synthesized by altering the incubation time and their size can be tuned by controlling the amount of the seeds added.

Preparation and characterization of luminescent cubic MCM-48 impregnated with an Eu3+ beta-diketonate complex

We report on the preparation of luminescent silica mesoporous molecular sieves (MCM-48) activated by the europium complex Eu(DBM)(3) . 2H(2)O (where DBM = dibenzoylmethane), using a simple wet impregnation method. Different concentrations of Eu(DBM)(3) . 2H(2)O were introduced into the MCM-48 cubic structure, and the resulting samples were washed with ethanol for different times. UV-Vis absorption measurements and thermogravimetric analysis were used to estimate the amount of Eu complex that has been incorporated within the pores of the MCM-48 host. The various samples were characterized by X-ray powder diffraction (XRD), infrared spectroscopy, diffuse reflectance (DR) and fluorescence measurements. The results reveal that Eu complexes have been successfully introduced into the pores of MCM-48 without disrupting the structure. All the impregnated MCM-48 materials show the typical red luminescence of Eu3+ when excited with a UV lamp. Shifts of the absorption maxima were observed in the DR and fluorescence excitation spectra and will be discussed in relation with guest-host interactions between the organic complex and the silica matrix. The decay profiles of the europium luminescence in the different samples were also measured and discussed.

Instability Analysis of Nonlinear Surface Waves in a Circular Cylindrical Container Subjected to a Vertical Excitation

Singular perturbation theory of two-time scale expansions was developed both in inviscid and weak viscous fluids to investigate the motion of single surface standing wave in a liquid-filled circular cylindrical vessel, which is subject to a vertical periodical oscillation. Firstly, it is assumed that the fluid in the circular cylindrical vessel is inviscid, incompressible and the motion is irrotational, a nonlinear evolution equation of slowly varying complex amplitude, which incorporates cubic nonlinear term, external excitation and the influence of surface tension, was derived from solvability condition of high-order approximation. It shows that when forced frequency is low, the effect of surface tension on mode selection of surface wave is not important. However, when forced frequency is high, the influence of surface tension is significant, and can not be neglected. This proved that the surface tension has the function, which causes free surface returning to equilibrium location. Theoretical results much close to experimental results when the surface tension is considered. In fact, the damping will appear in actual physical system due to dissipation of viscosity of fluid. Based upon weakly viscous fluids assumption, the fluid field was divided into an outer potential flow region and an inner boundary layer region. A linear amplitude equation of slowly varying complex amplitude, which incorporates damping term and external excitation, was derived from linearized Navier-Stokes equation. The analytical expression of damping coefficient was determined and the relation between damping and other related parameters (such as viscosity, forced amplitude and depth of fluid) was presented. The nonlinear amplitude equation and a dispersion, which had been derived from the inviscid fluid approximation, were modified by adding linear damping. It was found that the modified results much reasonably close to experimental results. Moreover, the influence both of the surface tension and the weak viscosity on the mode formation was described by comparing theoretical and experimental results. The results show that when the forcing frequency is low, the viscosity of the fluid is prominent for the mode selection. However, when the forcing frequency is high, the surface tension of the fluid is prominent. Finally, instability of the surface wave is analyzed and properties of the solutions of the modified amplitude equation are determined together with phase-plane trajectories. A necessary condition of forming stable surface wave is obtained and unstable regions are illustrated. (c) 2005 Elsevier SAS. All rights reserved.

Numerical simulation of standing solitons and their interaction

Standing soliton was studied by numerical simulation of ifs governing equation, a cubic Schrodiger equation with a complex conjugate term, which was derived by Miles and was accepted. The value of linear damping in Miles equation was studied. Calculations showed that linear damping effects strongly on the formation of a standing soliton and Laedke and Spatschek stable condition is only a necessary condition, but not a sufficient one. The interaction of two standing solitons was simulated. Simulations showed that the interaction pattern depends on system parameters. Calculations for the different initial condition and its development indicated that a stable standing soliton can be fanned only for proper initial disturbance, otherwise the disturbance will disappear or develop into several solitons.

Numerical and Analytical Study on the Pull-in Instability of Micro-Structure under Electrostatic Loading

The one-mode analysis method on the pull-in instability of micro-structure under electrostatic loading is presented. Taylor series are used to expand the electrostatic loading term in the one-mode analysis method, which makes analytical solution available. The one-mode analysis is the combination of Galerkin method and Cardan solution of cubic equation. The one-mode analysis offers a direct computation method on the pull-in voltage and displacement. In low axial loading range, it shows little difference with the established multi-mode analysis on predicting the pull-in voltages for three different structures (cantilever, clamped-clamped beams and the plate with four edges simply-supported) studied here. For numerical multi-mode analysis, we also show that using the structural symmetry to select the symmetric mode can greatly reduce both the computation effort and the numerical fluctuation.