Single crystal beta-Ga2O3: Cr grown by floating zone technique and its optical properties

beta-Ga2O3: Cr single crystals were grown by floating zone technique. Absorption spectra and fluorescence spectra were measured at room temperature. The values of field splitting parameter Dq and Racah parameter B were obtained by the peak values of absorption spectra. The value 10Dq/B=23.14 manifests that in beta-Ga2O3 crystals Cr3+ ions are influenced by low energy crystal field. After high temperature annealing in air, the Cr3+ intrinsic emission was enhanced and the green luminescence disappeared. The strong and broad 691 nm emission was obtained at 420 nm excitation due to the electron transition occurred from T-4(2) to (4)A(2). The studies manifest that the beta-Ga2O3 crystals have the potential application for tunable laser.

β-Ga2O3：Cr单晶体的浮区法生长及光学特性

利用浮区法生长得到β-Ga2O3：Cr单晶体．在室温下测试了β-Ga2O3：Cr单晶体的吸收光谱和发射光谱．通过吸收光谱计算了晶体场分裂系数Dq和Racah系数，得到10Dq/B=23．14，表明Cr^3＋在β-Ga2O3晶体中处于较弱的晶体场β-Ga2O3：Cr单晶体经高温退火后Cr^3＋的发射明显加强，而绿光的发射减弱．采用420nm波长激发，在691nm可得到强而宽的特征发射，此发射对应于Cr^3＋的^4T2→^4A2跃迁．

Influence of Cr interlayer on the structure and optical properties of Ag films on glass substrate by magnetron sputtering

Optical properties and microstructure of Ag film on glass substrate with Cr intermediate layer were studied by using spectrophotometer and XRD. The spectra results showed that introducing Cr intermediate layer reduced the surface roughness and promoted the reflectivity of Ag film. The XRD analysis showed that the crystalline grains increased and the stress decreased. The adhesion was also improved by using the tape test method. (c) 2006 Published by Elsevier B.V.

固氮菌突变种DJ35钼铁蛋白和UW3细菌铁蛋白的纯化、特性、晶体生长及鉴定

一、棕色固氮菌突变种DJ35固氮酶钼铁蛋白的纯化、体外重组及结晶研究 　　棕色固氮菌(Azotobacter vinelandii Lipmann)突变种DJ35的菌体破碎后，所得的未经加热的粗提物经DEAE Cellulose 52柱层析后得到部分纯的钼铁蛋白（ΔnifE Av1）和铁蛋白(Av2)。部分纯的ΔnifE Av1再经Sephacryl S-300和Q-Sepharose Fast Flow柱层析进一步纯化，便首次得到SDS凝胶电泳检测为基本纯的ΔnifE Av1。SDS-PAGE及Western blotting的结果表明，ΔnifE Av1具有与野生型棕色固氮菌钼铁蛋白(OP Av1)相同的亚基种类和组成（α2β2）。质子还原活性测定表明，在与Av2进行活性互补时ΔnifE Av1不具有明显的质子还原活性，而与从OP Av1抽提出的FeMoco抽提液保温后便可与Av2实现活性互补。这表明，ΔnifE Av1是一种缺失FeMoco的钼铁蛋白。 　　将ΔnifE Av1用过量的邻菲啰啉(o-phenanthroline)厌氧处理并经Sephadex G-25柱层析分离后，便得到部分丢失Fe的ΔnifE Av1©。在同时存在Av2和MgATP发生系统的条件下，ΔnifE Av1©, 而不是处理前的ΔnifE Av1，可为由KMnO4或Na2CrO4、高柠檬酸铁、Na2S、Na2S2O4 和二硫苏糖醇组成的含Mn或含Cr重组液(RS-Mn或RS-Cr)显著激活，但在缺少MgATP或Av2的条件下，RS-Mn和RS-Cr则不能激活ΔnifE Av1©。这就表明，RS-Mn和RS-Cr对ΔnifE Av1©的激活都需要邻菲啰啉的预处理及Av2和MgATP的同时存在。从分别缺失nifZ和nifB点突变的固氮菌突变种DJ194和UW45中纯化得到的钼铁蛋白，ΔnifZ Av1和NifB- Av1，经邻菲啰啉厌氧处理并经Sephadex G-25柱层析分离后，也分别得到部分丢失Fe的ΔnifZ Av1©和NifB- Av1©。与ΔnifE Av1©一样，这两种蛋白在Av2和MgATP同时存在时也可被RS-Cr和含Mo重组液（RS-Mo）明显激活。 　　为获得可供X-射线衍射的ΔnifE Av1的大单晶，对组成蛋白质沉淀剂的各种化合物的种类和浓度、缓冲液的pH值、结晶方法及蛋白样品的批次、浓度等结晶条件进行了大量优化研究。首次获得了ΔnifE Av1的深棕色短斜四棱柱晶体，并对其蛋白组成进行了鉴定。 二、铬铁蛋白中残存的棕色固氮菌细菌铁蛋白的晶体生长及鉴定 　　从无钼、无氨而含铬的固氮培养基中生长的棕色固氮菌突变种UW3中纯化得到了部分纯的CrFe蛋白。在试图培养CrFe蛋白大晶体时发现，棕色晶体和砖红色晶体可同时或单独出现。SDS-和厌氧天然-PAGE皆表明，棕色晶体主要由与Av1类似大小的亚基（~60 kD）组成，而砖红色晶体则主要由~20 kD亚基组成。Western-blotting表明只有~60 kD亚基可与OP Av1的抗体发生反应，而~20 kD亚基则无这种反应。在部分纯的CrFe蛋白中，~20 kD的蛋白含量远低于~60 kD蛋白的含量，表明由这种小亚基组成的蛋白只是CrFe蛋白中的一种污染蛋白。用3,5-二氨基苯甲酸染色的天然电泳表明，形成砖红色和棕色晶体的蛋白是迁移率不同的两种含铁蛋白。质谱分析表明，该晶体蛋白为棕色固氮菌的细菌铁蛋白（AvBF）。分辨率为2.34 Å的X-射线衍射结果也表明，砖红色晶体属于H3空间群，晶胞参数为a = 124.965 Å, b= 124.965 Å 和 c = 287.406 Å。首次完成的结构解析也表明，这种砖红色晶体确为24聚体的AvBF。 关键词：棕色固氮菌突变种DJ35和UW3; ΔnifE Av1; 铬铁蛋白; 细菌铁蛋白; 纯化和特性; 体外激活组装; 晶体生长及组成鉴定

Microcalorimetric investigation of the toxic action of Cr(VI) on the metabolism of Tetrahymena thermophila BF5 during growth

Tetrahymena thermophila BF5 produce heat by metabolism and movement. Using a TAM air isothermal microcalorimeter, the power-time curves of the metabolism of T thermophila BF5 during growth were obtained and the action on them by the addition of Cr(VI) were studied. The morphological change with Cr(VI) coexisted and biomass change during the process of T thermophila BF5 growth were studied by light microscope. Chromium has been regarded as an essential trace element for life. However, hexavalent chromium is a known carcinogen, mutagen, cytotoxicant and strong oxidizing agent. Cr(VI) of different concentration have different effects on T thermophila BF5 growth with the phenomenon of low dose stimulation (0-3 x 10(-5) mol L-1) and high dose inhibition (3 x 10(-5) to 2.4 x 10(-4) mol L-1). The relationship between the growth rate constant (k) and c is a typical U-shaped curve, which is a characteristic of hormesis. T thermophila BF5 cannot grow at all when the concentration of Cr(VI) is up to 2.4 x 10(-4) mol L-1. The microscopic observations agree well with the results obtained by means of microcalorimetry. And T thermophila BF5 had obviously morphological changes by the addition of Cr(VI). (c) 2006 Elsevier B.V. All rights reserved.

Comparison of evolutionary rates in the mitochondrial DNA cytochrome b gene and control region and their implications for phylogeny of the Cobitoidea (Teleostei : Cypriniformes)

It is widely accepted that mitochondrial DNA (mtDNA) control region evolves faster than protein encoding genes with few exceptions. In the present study, we sequenced the mitochondrial cytochrome b gene (cyt b) and control region (CR) and compared their rates in 93 specimens representing 67 species of loaches and some related taxa in the Cobitoidea (Order Cypriniformes). The results showed that sequence divergences of the CR were broadly higher than those of the cyt b (about 1.83 times). However, in considering only closely related species, CR sequence evolution was slower than that of cyt b gene (ratio of CR/cyt b is 0.78), a pattern that is found to be very common in Cypriniformes. Combined data of the cyt b and CR were used to estimate the phylogenetic relationship of the Cobitoidea by maximum parsimony, neighbor-joining, and Bayesian methods. With Cyprinus carpio and Danio rerio as outgroups, three analyses identified the same four lineages representing four subfamilies of loaches, with Botiinae on the basal-most clade. The phylogenctic relationship of the Cobitoidea was ((Catostomidae + Gyrinocheilidae) + (Botiinae + (Balitorinae + (Cobitinae + Nemacheilinae)))), which indicated that Sawada's Cobitidae (including Cobitinae and Botiinae) was not monophyletic. Our molecular phylogenetic analyses are in very close agreement with the phylogenetic results based on the morphological data proposed by Nalbant and Bianco, wherein these four subfamilies were elevated to the family level as Botiidae, Balitoridae, Cobitidae, and Nemacheilidae. (c) 2005 Elsevier Inc. All rights reserved.

First-principles study of transition metal impurities in Si

By using ab initio electronic structure calculations within density functional theory, we study the structural, electronic, and magnetic properties of Si doped with a transition metal impurity. We consider the transition metals of the 3d series V, Cr, Mn, Fe, Co, and Ni. To get insight into the level filling mechanism and the magnetization saturation, we first investigate the transition metal-Si alloys in the zinc-blende structure. Next, we investigate the doping of bulk Si with a transition metal atom, in which it occupies the substitutional site, the interstitial site with tetrahedral symmetry, and the interstitial site with hexagonal symmetry. It is found that all of these transition metal impurities prefer an interstitial position in Si. Furthermore, we show that it is possible to interpret the electronic and magnetic properties by using a simple level filling picture and a comparison is made to Ge doped with the same transition metal atoms. In order to get insight into the effect of a strained environment, we calculate the formation energy as a function of an applied homogeneous pressure and we show that an applied pressure can stabilize the substitutional position of transition metal impurities in Si. Finally, the energies of the ferromagnetic states are compared to those of the antiferromagnetic states. It is shown that the interstitial site of the Mn dopant helps us to stabilize the nearest neighbor substitutional site to realize the ferromagnetic state. For doping of Si with Cr, a ferrimagnetic behavior is predicted.

Influence of growth temperature on structural and magnetic characterization of (In, Cr)As quantum dots

(In, Cr)As ferromagnetic semiconductor quantum dots (QDs) were grown by molecular beam epitaxy on GaAs (001) substrates. The growth temperature effects on structure and magnetism of the QDs were investigated systematically. The Cr(2+)3d(4) states and quantum confined effect are assumed to play an important role in the room-temperature ferromagnetism of (In, Cr)As QDs. (C) 2009 Elsevier B.V. All rights reserved.

Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles

High Curie temperature of 900 K has been reported in Cr-doped AlN diluted magnetic semiconductors prepared by various methods, which is exciting for spintronic applications. It is believed that N defects play important roles in achieving the high-temperature ferromagnetism in good samples. Motivated by these experimental advances, we use a full-potential density-functional-theory method and supercell approach to investigate N defects and their effects on ferromagnetism of (Al,Cr)N with N vacancies (V-N). We investigate the structural and electronic properties of V-N, single Cr atom, Cr-Cr atom pairs, Cr-V-N pairs, and so on. In each case, the most stable structure is obtained by comparing different atomic configurations optimized in terms of the total energy and the force on every atom, and then it is used to calculate the defect formation energy and study the electronic structures. Our total-energy calculations show that the nearest substitutional Cr-Cr pair with the two spins in parallel is the most favorable and the nearest Cr-V-N pair makes a stable complex. Our formation energies indicate that V-N regions can be formed spontaneously under N-poor condition because the minimal V-N formation energy equals -0.23 eV or Cr-doped regions with high enough concentrations can be formed under N-rich condition because the Cr formation energy equals 0.04 eV, and hence real Cr-doped AlN samples are formed by forming some Cr-doped regions and separated V-N regions and through subsequent atomic relaxation during annealing. Both of the single Cr atom and the N vacancy create filled electronic states in the semiconductor gap of AlN. N vacancies enhance the ferromagnetism by adding mu(B) to the Cr moment each but reduce the ferromagnetic exchange constants between the spins in the nearest Cr-Cr pairs. These calculated results are in agreement with experimental observations and facts of real Cr-doped AlN samples and their synthesis. Our first-principles results are useful to elucidate the mechanism for the ferromagnetism and to explore high-performance Cr-doped AlN diluted magnetic semiconductors.

Ferromagnetism in Mn and Cr doped GaN by thermal diffusion

Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of the samples, which were all n-type, did not change significantly after the diffusion doping. X-ray diffraction measurements revealed no secondary phase in the samples. Experiments using superconducting quantum interference device (SQUID) showed that the samples were ferromagnetic at 5 and 300 K, implying the Curie temperature to be around or over 300 K, despite their n-type conductivity. (c) 2004 Elsevier B.V. All rights reserved.

Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property

As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance material after high temperature annealing. Defects in the InP materials have been studied by conventional Hall effect measurement, thermally stimulated current spectroscopy, deep level transient spectroscopy and X-ray diffraction respectively. The results indicate that Fe atoms in the InP material change from the substitutional to the interstitial sites under thermal activation. Consequently, the InP material loses its deep compensation centers which results in the change in types of conduction. The mechanism and cause of the phenomena have been analyzed through comparison of the sites of Fe atom occupation and activation in doping, diffusion and ion implantation processes of InP.

PIXE analysis of Fe content in Fe-implanted GaN film

The diluted magnetic semiconductors (DMSs) were achieved by the ion implantation. Fe+ ions (250 keV) were implanted into n-type GaN at room temperature with doses ranging from 8 X 10(15) cm(-2) to 8 X 10(16) cm(-2) and subsequently rapidly annealed at 800 degrees C for 5 m in N-2 ambient. PIXE was employed to determine the Fe-implanted content. The magnetic property was measured by the Quantum Design MPMS SQUID magnetometer. No secondary phases or clusters are detected within the sensitivity of XRD. Apparent ferromagnetic hysteresis loops measured at 10 K were presented. The relationships between the Fe-implanted content and the ferromagnetic property are discussed. (c) 2006 Elsevier B.V. All rights reserved.

Mossbauer spectroscopic study of R3Fe29-xCrx and R3Fe29-xCrxH,(y)(R = Y, Ce, Nd, Sm, Gd, Tb, and Dy)

Fe-57 Mossbauer spectra for the series of R3Fe29-xCrx (R = Y,Ce, Nd, Sm, Gd, Tb, and Dy) compounds and their hydrides have been measured at 4.2 K. The weighted average hyperfine field at the Fe sites was separated into a 3d-electron contribution, proportional to the average Fe moment, and a transferred contribution due to rare earth moments. The latter was found to increase with the rare earth effective spin (g(J) - 1) J. Hyperfine fields in the hydrides were only slightly larger than in the corresponding alloys.

Crystallographic and magnetic properties of hydride R3Fe29-xTxHy (R=Y, Ce, Nd, Sm, Gd, Tb and Dy; T=V and Cr)

The crystallographic and intrinsic magnetic properties of hydride R3Fe29-xTxHy (R=Y, Ce, Nd, Sm, Gd, Tb, and Dy; T=V and Cr) have been investigated. The lattice constants and the unit cell volume of R3Fe29-xTxHy decrease with increasing R atomic number from Nd to Dy, except for Ce, reflecting the lanthanide contraction. Regular anisotropic expansions, mainly along the a- and b-axis rather than along the c-axis, are observed for all the compounds upon hydrogenation. Hydrogenation leads to an increase in Curie temperature. First-order magnetization processes (FOMP) occur in magnetic fields of around 1.5 T and 4.0 T at 4.2 K for Nd3Fe24.5Cr4.5H5.0 and Tb(3)Fc(27.0)Cr(2.0)H(2.8), and around 1.4 T at room temperature for Gd3Fe28.0Cr1.0H4.2 Abnormal crystallographic and magnetic properties of Ce3Fe29-xTxHy suggest that the Ce ion is non-triply ionized.

Hydrogenation and anisotropic expansions in R3Fe29-xTx (R = Y, Ce, Nd, Sm, Gd, Tb and Dy; T = V and Cr)

A systematic study of the phase formation, structure and magnetic properties of the R3Fe29-xTx compounds (R=Y, Ce, Nd, Sm, Gd, Tb, and Dy; T=V and Cr) has been performed upon hydrogenation. The lattice constants and the unit cell volume of R3Fe29-xTxHy decrease with increasing R atomic number from Nd to Dy, except for Ce, reflecting the lanthanide contraction. Regular anisotropic expansions mainly along the a- and b-axis rather than along the c-axis are observed for all of the compounds upon hydrogenation. Hydrogenation leads to an increase in the Curie temperature and a corresponding increase in the saturation magnetization at room temperature for each compound. First order magnetization processes (FOMP) occur in the external magnetic fields for Nd3Fe24.5Cr4.5H5.0, Tb3Fe27.0Cr2.0H2.8, and Gd3Fe28.0Cr1.0H4.2 compounds.