Influence of the rapid thermal annealing on the properties of thin a-Si films

The variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200degreesC for 2 minutes change their structure to polycrystalline and as a result their resistivity decreases by 4 orders of magnitude. Due to the small thickness of the as deposited amorphous silicon the obtained poly-Si is strongly irregular and has many discontinuities in its texture.

Preparation, structure and dielectric properties of (Ba1-xSrx)(2)NaNb5O15 ceramics

In this study the tungsten-bronze type tetragonal (Ba1-xSrx)(2)NaNb5O15 system as a kind of lead-free ferroelectric ceramics has been synthesized by low-temperature combustion method. Microstructure and dielectric properties of (Ba1-xSrx)(2)NaNb5O15 system were also investigated. X-ray diffraction (XRD) study confirms the formation of single-phase tetragonal compounds in the crystal system at room temperature. The TEM photograph shows that the particles synthesized by low-temperature combustion method are uniform with an average particle size of 30nm in diameter.

Novel < 110 >-oriented organic-inorganic perovskite compound stabilized by N-(3-aminopropyl) imidazole with improved optical properties

In the organic-inorganic perovskites family, the < 100 >-oriented type has been extensively investigated as a result of its unique magnetic, optical, and electrical properties, and only one type of < 110 >-oriented hybrid perovskite stabilized by methylammonium and iodoformamidinium cations or the latter themselves has been known so far. In this paper, another novel < 110 >-oriented organic-inorganic perovskite (C6H13N3)-PbBr4 (compound 1) has been prepared by reacting N-(3-aminopropyl)imidazole (API) with PbBr2 in hydrobromic acid. The crystal structure is determined, which indicates that the perovskite is stabilized by API. The introduction of the optically active organic ligand API into the hybrid perovskite results in a red shift and a great enhancement of photoluminescence in the perovskite with respect to organic ligand API itself. These results have been explained according to calculation based on density-functional theory. Moreover, the excellent film processing ability for the perovskite (C6H13N3)PbBr4 together with the improved optical properties makes it have potential application in optoelectronic devices.

Nitrate-citrate combustion synthesis and properties of Ce1-xSmxO2-x/2 solid solutions

A nitrate-citrate combustion route to synthesize nanocrystalline samarium-doped ceria powders for solid electrolyte ceramics is presented. This route is based on the gelling of nitrate solutions by the addition of citric acid and ammonium hydroxide, followed by an intense combustion process due to an exothermic redox reaction between nitrate and citrate ions. The influence of ignition temperature on the characteristics of the powders was studied. The change of the crystal structure with the content of doped Sm was investigated. High temperature X-ray, and Raman scattering were used to characterize the sample. The lattice constant and unit volume increase with doping level and increasing temperature. Dense ceramic samples prepared by uniaxial pressing and sintering in air were also studied.

Sol-gel synthesis and properties of Ce1-xGdxO2-x/2 solid solutions

A series of solid electrolytes Ce1-xGdxO2-x/2(x=0 similar to0.6) was prepared by sol-gel method. The structure, thermal expansion coefficient and electrical properties of the solid solutions were systematically studied. XRD data showed that a complete cubic fluorite structure was formed at 160 degreesC. The purity of the product prepared by the sol-gel method is higher, the grain size is uniformly smaller. They were easily sintered into highly dense ceramic pellets at 1 300 degreesC. The sintering temperature was significantly lower than that by traditionally high temperature solid phase reaction method. The thermal expansion coefficient of Ce0.8Gd0.2O1.9, determined from high- temperature XRD data, is 8. 125 X 10(-6) K-1. Impedance spectra analyses showed that the grain-boundary resistance of the solid electrolyte prepared by sol-gel method was reduced or even eliminated. The conductivity of Ce0.8Gd0.2O1.9 is 5.26 X 10(-3) S/cm at 600 degreesC. The activation energy (E-a) is 0.82 eV.

THE EFFECT ON PHYSICAL-PROPERTIES OF THE SUBSTITUTION OF CA OR BA FOR SR IN NDSRNIO4

A new solid solution series, NdSr(1-x)M(x)NiO(4) (M = Ca: 0.0 less than or equal to x less than or equal to 1.0; M = Ba: 0.0 less than or equal to x less than or equal to 0.6), was synthesized by solid state reaction, and the structures, magnetic and electrical properties and optical spectra of this series have been studied. All the samples crystalized in tetragonal systems, with the exception of NdCaNiO4, which crystallized in the orthohombic system. IR spectra of NdSr1-xCaxNiO4 indicated that the lengths of two Ni-O bonds decrease with increasing Ca content. The electrical conduction changed from metallic-type to semiconductive-type when x greater than or equal to 0.4 (M = Ca, Ba), and the room temperature resistivities of NdSr1-xCaxNiO4 increased with the increase of Ca content. Magnetic susceptibility measurements revealed that Ni+3 ions in all the samplies were in low-spin state over the temperature range 77-300 K.

Enhanced cycling performance and high energy density of LiFePO4 based lithium ion batteries

LiFePO4 attracts a lot of attention as cathode materials for the next generation of lithium ion batteries. However, LiFePO4 has a poor rate capability attributed to low electronic conductivity and low density. There is seldom data reported on lithium ion batteries with LiFePO4 as cathode and graphite as anode. According to our experimental results, the capacity fading on cycling is surprisingly negligible at 1664 cycles for the cell type 042040. It delivers a capacity of 1170 mAh for 18650 cell type at 4.5C discharge rate. It is confirmed that lithium ion batteries with LiFePO4 as cathode are suitable for electric vehicle application. (c) 2007 Elsevier B.V. All rights reserved.

Electric characteristics of pseudo-spark during breakdown phase

An analysis of the time-dependent resistive voltage and power deposition during the breakdown phase of pseudo-spark is presented. The voltage and current were measured by specially designed low-inductance capacitive voltage divider and current measuring resistor. The measured waveforms of voltage and current are digitized and processed by a computer program to remove the inductive component, so as to obtain resistive voltage and power deposition. The influence of pressure, cathode geometry and charging voltage of storage capacitors on the electrical properties in the breakdown phase are investigated. The results suggest that the breakdown phase of pseudo-spark consists of three stages. The first stage is mainly hollow cathode discharge. In the second stage, field-enhanced thermionic emission takes place, resulting in a fast voltage drop and sharp rise of discharge current. The third stage of discharge depends simply on the parameters of the discharge circuit.

Co和Cu薄膜电学特性和连续性特征的判据

采用离子束溅射沉积了不同厚度的Co膜和Cu膜，利用四电极法测量了薄膜的电阻率，从而得到了Co膜和Cu膜的电导率随薄膜厚度的变化关系。实验结果表明，Co膜和Cu膜的电学特性都具有明显的尺寸效应。比较了同时考虑表面散射和晶界散射的电导理论得到的电导率公式与实验结果，不同薄膜厚度电导率的理论结果与实验结果符合较好。提出了厚度作为金属薄膜生长从不连续膜进入连续膜的一个特征判据，并利用原子力显微镜（AFM）观测了膜厚在特征厚度附近的Co膜和Cu膜的表面形貌。

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition. The surface morphology of wafers and the current-voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes

Growth temperature dependences of InN films grown by MOCVD

We investigate the growth temperature dependences of InN films grown by metal organic chemical vapor deposition (MOCVD). Experimental results indicate that growth temperature has a strong effect on the surface morphology, crystalline quality and electrical properties of the InN layer. The increasing growth temperature broadened the v scan's full-width at half-maximum (FWHM) and roughened the surface morphology; whereas the electrical properties improved: As the temperature increased from 460 degrees C to 560 degrees C, room-temperature Hall mobility increased from 98 cm(2)/V s to nearly 800 cm(2)/V s and carrier concentration dropped from 5.29 x 10(19) cm (3) to 0.93 x 10(19) cm (3). The higher growth temperature resulted in more efficient cracking of NH3, which improved Hall mobility and decreased carrier concentration. (C) 2008 Elsevier B.V. All rights reserved.

Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2

InGaN/GaN multi-quantum-well blue (461 +/- 4 nm) light emitting diodes with higher electroluminescence intensity are obtained by postgrowth thermal annealing at 720 C in O-2-ambient. Based on our first-principle total-energy calculations, we conclude that besides dissociating the Mg-H complex by forming H2O, annealing in O-2 has another positive effect on the activation of acceptor Mg in GaN. Mg can be further activated by the formation of an impurity band above the valence band maximum of host GaN from the passivated Mg-Ga-O-N complex. Our calculated ionization energy for acceptor Mg in the passivated system is about 30 meV shallower than that in pure GaN, in good agreement with previous experimental measurement. Our model can explain that the enhanced electroluminescence intensity of InGaN/GaN MQWs based on Mg-doped p-type GaN is due to a decrease in the ionization energy of Mg acceptor with the presence of oxygen. (C) 2008 American Institute of Physics.

MOCVD growth of InN using a GaN buffer

We have investigated MOCVD growth of InN oil sapphire with and without a GaN buffer between 490 and 520 degrees C. The buffer significantly improves the surface morphological uniformity and electrical properties of InN epilayers. Characterization of the as-grown epilayers with the buffer reveals that kinetics-limited islands are formed at lower temperatures, whereas islands with equilibrium shape are obtained at higher temperatures. Below 520 degrees C, increasing temperature improves structural quality but degrades electrical properties. Hall data from this study Suggest that V-N-related defects/impurities are the possible donor species and compensation varies with charged dislocation acceptors. We believe that reducing carrier concentration and dislocation density is effective to increase the Hall mobility of InN. (C) 2007 Elsevier Ltd. All rights reserved.

Investigation on the structural origin of n-type conductivity in InN films

This work presents a study of the correlation between the electrical properties and the structural defects in nominally undoped InN films. It is found that the density of edge-type threading dislocations (TDs) considerably affects the electron concentration and mobility in InN films. The Hall-effect measured electron concentration increases, while the Hall mobility decreases with the increase in the edge-type TD density. With the combination of secondary ion mass spectrometry and positron annihilation analysis, we suggest that donor-type point defects at the edge-type TD lines may serve as dominant donors in InN films and affect the carrier mobility.

Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films

In this work, the influences of CCl4 on the metalorganic chemical vapor deposition (MOCVD) growth of InN were studied for the first time. It was found that the addition of CCl4 can effectively suppress the formation of metal indium (In) droplets during InN growth, which was ascribed to the etching effect of Cl to In. However, with increasing of CCl4 flow, the InN growth rate decreased but the lateral growth of InN islands was enhanced. This provides a possibility of promoting islands coalescence toward a smooth surface of the InN film by MOCVD. The influence of addition of CCl4 on the electrical properties was also investigated.