Raman scattering and photoluminescence of ZnSxTe1-x mixed crystals

We have investigated the Raman scattering and the photoluminescence (PL) of ZnSxTe1-x mixed crystals grown by MBE, covering the entire composition range (0 less than or equal to x < 1). The results of Raman studies show that the ZnSxTe1-x mixed crystals display two-mode behaviour. In addition, photoluminescence spectra obtained in backscattering and edge-emission geometries, reflectivity spectra and the: temperature dependence of the photoluminescence of ZnSxTe1-x have been employed to find out the origin of PL emissions in ZnSxTe1-x with different x values. The results indicate that emission bands, for the samples with small x values, can be related to the band gap transitions or a shallow-level emission centre, while as x approaches 1, they are designated to strong radiative recombination of Te isoelectronic centres (IECs).

Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As

We report the influence of growth parameters and post-growth annealing on the structural characterizations and magnetic properties of (Ga, Cr)As films. The crystalline quality and magnetic properties are sensitive to the growth conditions. The single-phase (Ga, Cr)As film with the Curie temperature of 10 K is synthesized at growth temperature T-s = 250 degrees C and with nominal Cr content x = 0.016. However, for the films with x > 0.02, the aggregation of Cr atoms is strongly enhanced as both T. and x increase, which not only brings strong compressive strain in the epilayer, but also roughens the surface. The origin of room-temperature ferromagnetism in (Ga, Cr)As films with nanoclusters is also discussed.

Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition

Low pressure metalorganic chemical vapour deposition (LP-MOCVD) growth and characteristics of InAssb on (100) Gasb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17 mu m in wavelength. The surface of InAssb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAssb film shows to be of n-type conduction with an electron concentration of 8.52 x 10(16) cm(-3).

Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques

The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more in atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.

Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN

The electronic properties of wide-energy gap zinc-blende structure GaN, A1N, and their alloys Ga(1-x)A1(x)N are investigated using the empirical pseudopotential method. Electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained for GaN and AIN, respectively. The energies of Gamma, X, L conduction valleys of Ga(1-x)A1(x)N alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices based on these materials in the blue light range application. (C) 1995 American Institute of Physics.

Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN

The electronic properties of wide energy gap zinc-blende structure GaN, AlN and their alloys Ga1-xAlxN are investigated using the empirical pseudopotential method. Electron and hole Effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained. The energies of Gamma, X, L conduction valleys of Ga1-xAlxN alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices in the blue light range.

Optical properties of AIInGaN quaternary alloys

Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-resolved photoluminescence (TRPL). The fast redshift of PL peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. This result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to be described by a stretched exponential function of exp[(-t/tau)(beta)], indicating the presence of a significant disorder in the material. The disorder is attributed to a randomly distributed quantum dots or clusters caused by indium fluctuations. By studying the dependence of the dispersive exponent 8 on the temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered quantum dots. Furthermore, the localized states are found to have OD density of states up to 250 K, since the radiative lifetime remains almost unchanged with increasing temperature.

Crystallographic and electrochemical characteristics of melt-spun Ti–Zr–Ni–Y alloys

Ti45Zr30Ni25Yx (x = 1, 3, 5 and 7) alloys were prepared by melt-spinning at wheel velocity of 20 m s(-1). The effect of additive Y on phase structure and electrochemical performance of melt-spun alloys was investigated. Ti45Zr30Ni25Yx melt-spun alloys were composed of I-phase and amorphous phase. T

The microstructure and mechanical properties of Mg-3Al-3RE alloys

The Mg-3Al-3RE alloys (RE, the cerium-rich or the yttrium-rich misch metal) were smelted in a resistance furnace under the protective flux from the Mg-RE master alloys and pure magnesium ingots. The microstructure and mechanical properties of samples prepared by steel mould casting method were investigated.

Dry sliding wear behavior of magnesium alloys

Dry sliding tests were performed on as-cast magnesium alloys Mg97Zn1Y2 and AZ91 using a pin-on-disc configuration. Coefficients of friction and wear rates were measured within a load range of 20-380 and 20-240 N at a sliding velocity of 0.785 m/s. X-ray differactometer, scanning electron microscopy, tensile testing machine were used to characterize the microstructures and mechanical properties of Mg97Zn1Y2 alloy and AZ91 alloy. Worn surface morphologies of Mg97Zn1Y2 and AZ91 were examined using scanning electron microscopy.

Structure and electrochemical characteristics of melted composite Ti0.10Zr0.15V0.35Cr0.10Ni0.30-LaNi5 hydrogen storage alloys

The structure and electrochemical characteristics of melted composite Ti0.10Zr0.15V0.35Cr0.10Ni0.30+x% LaNi5 (x=0, 1, 5 and 10) hydrogen storage alloys have been investigated systematically. XRD shows that the matrix phase structure of V-based solid solution phase with a BCC structure and C14 Laves phase with hexagonal structure is not changed after adding LaNi5 alloy. However, the amount of the secondary phase increases with increasing LaNi5 content. Field emission scanning electron microscopy-energy dispersive spectroscopy (FESEM-EDS) shows that the C14 Laves phase contains more Zr and the white lard phase has a composition close to (Zr, Ti)(V, Cr, Ni, La)(2).

Aging behavior and mechanical properties of Mg-Gd-Ho alloys

The Mg-8Gd-0.6Zr-xHo (x = 1, 3 and 5, mass%) alloys were prepared by casting technology, and structures, aging strengthening mechanism and mechanical properties of the alloys were investigated. The age behaviors and the mechanical properties are improved by adding Ho addition. The structures of the alloys are characterized by the present of rosette-shaped equiaxed grains. The peak hardness value of the Mg-8Gd-0.6Zr-3Ho alloy is 100 Hv, which is about 30% higher than that of Mg-8Gd-0.6Zr alloy.

Microstructure and Strengthening Mechanism of Die-Cast Mg-Gd Based Alloys

Mg-8Gd-2Y-Nd-0.3Zn (wt%) alloy was prepared by the high pressure die-cast technique. The microstructure, mechanical properties in the temperature range from room temperature to 573 K, and strengthening mechanism were investigated. It was confirmed that the Mg-Gd-based alloy with high Gd content exhibited outstanding die-cast character. The die-cast alloy was mainly composed of small cellular equiaxed dendrites and the matrix. The long lamellar-shaped stacking compound of Mg3X (X: Gd, Y, Nd, and Zn) and polygon-shaped.

Effect of Y for enhanced age hardening response and mechanical properties of Mg-Ho-Y-Zr alloys

In this study, compositional dependence of age hardening characteristics and tensile properties were investigated for Mg-4Ho-xY-0.6Zr alloys (x = 0, 3 5, and 7 wt%). The result showed that with increasing Y content, the hardness of the alloys increased in the as-quenched and aged-peak conditions. Considerable age hardening response was recognized for the alloys. When the alloy containing 7% Y showed the most remarkable age hardening response at aging temperature of 250 degrees C.

Electrochemical Hydrogen Storage in Ti1.6V0.4Ni1-xCox Icosahedral Quasicrystalline Alloys

The discovery of the icosahedral phase (i-phase) in rapidly quenched Ti1.6V0.4Ni1-xCox (x=0.02-01) alloys is described herein. The i-phase occurs in a similar amount relative to the coexisting beta Ti phase. The electron diffraction patterns show the distinct spot anisotropy, indicating that the i-phase is metastable. The electrochemical hydrogen storage performance of these five alloy electrodes are also reported herein. The hydrogen desorption of nonelectrochemical recombination in the cyclic voltammetric (CV) response exhibits the demand for electrocatalytic activity improvement.