Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy

Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons. the donor and the acceptors were determined. These values are in good agreement with recent theoretical results.

Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates

Cubic GaN/GaAs(0 0 1) epilayers and hexagonal inclusions are characterized by X-ray diffraction (XRD), Photoluminescence (PL), Raman spectroscopy, and transmission electron microscopy (TEM). The X-ray {0 0 0 2} and (1 0 (1) over bar 0) pole figures show that the orientation relationships between cubic GaN and hexagonal inclusions are (1 1 1)//(0 0 0 1), <1 1 2 >//<1 0 (1) over bar 0 >. The distribution of hexagonal inclusions mainly results from the interfacial bonding disorder in the grain boundaries parallel to hexagonal <0 0 0 1 > directions and the lattice mismatch in <0 0 0 1 > directions on {1 0 (1) over bar 0} planes. In order to reduce the energy increase in cubic epilayers, hexagonal lamellas with smaller sizes in <0 0 0 1 > directions often nucleate inside the buffer layer or near the interface between the buffer layer and the epitaxial layer, and penetrate through the whole epitaxial layer with this orientation relationship. (C) 2001 Elsevier Science B.V. All rights reserved.

The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

We present some results on the effect of initial buffer layer on the crystalline quality of Cubic GaN epitaxial layers grown on GaAs(100) substrates by metalorganic chemical vapor deposition. Photoluminescence and Hall measurements were performed to characterize the electrical and optical properties of cubic GaN. The crystalline quality subsequently grown high-temperature (HT) cubic GaN layers strongly depended on thermal effects during the temperature ramping process after low temperature (LT) growth of the buffer layers. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to investigate this temperature ramping process. Furthermore, the role of thermal treatment during the temperature ramping process was identified. Using the optimum buffer layer, the full width at half maxim (FWHM) at room temperature photoluminescence 5.6 nm was achieved. To our knowledge, this is the best FWHM value for cubic GaN to date. The background carrier concentration was as low as 3 x 10(13) cm(-3). (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Heteroepitaxy of cubic GaN: influence of interface structure

We report on the epitaxial growth and the microstructure of cubic GaN. The layers are deposited by plasma-assisted molecular beam epitaxy on GaAs and Si substrates. Despite the extreme lattice mismatch between these materials, GaN grows in the metastable cubic phase with a well-defined orientation-relationship to the GaAs substrate including a sharp heteroboundary. The preference of the metastable phase and its epitaxial orientation originates in the interface structure which is found to be governed by a coincidence site lattice.

Cubic sinusoidal phase mask: Another choice to extend the depth of field of incoherent imaging system

Wave-front coding is a well known technique used to extend the depth of field of incoherent imaging system. The core of this technique lies in the design of suitable phase masks, among which the most important one is the cubic phase mask suggested by Dowski and Cathey (1995) [1]. In this paper, we propose a new type called cubic sinusoidal phase mask which is generated by combing the cubic one and another component having the sinusoidal form. Numerical evaluations and real experimental results demonstrate that the composite phase mask is superior to the original cubic phase mask with parameters optimized and provides another choice to achieve the goal of depth extension. (C) 2009 Elsevier Ltd. All rights reserved.

Selective Synthesis of Single-Crystalline Rhombic Dodecahedral, Octahedral, and Cubic Gold Nanocrystals

This paper reports a versatile seed-mediated growth method for selectively synthesizing single-crystalline rhombic dodecahedral, octahedral, and cubic gold nanocrystals. In the seed-mediated growth method, cetylpyridinium chloride (CPC) and CPC-capped single-crystalline gold nanocrystals 41.3 nm in size are used as the surfactant and seeds, respectively. The CPC-capped gold seeds can avoid twinning during the growth process, which enables us to study the correlations between the growth conditions and the shapes of the gold nanocrystals. Surface-energy and kinetic considerations are taken into account to understand the formation mechanisms of the single-crystalline gold nanocrystals with varying shapes.

Preparation and luminescent properties of cubic Eu3+ : Y2O3 nanocrystals and comparison to bulk Eu3+ : Y2O3

Y2O3:Eu3+ nanocrystals were prepared by combustion synthesis. The particle size estimated by X-ray powder diffraction (XRD) was about 10 nm. A blue-shift of the charge-transfer (CT) band in excitation spectra was observed in Y2O3:Eu3+ nanocrystals compared with bulk Y2O3:Eu3+. The electronic structure Of Y2O3 is calculated by density functional method and exchange and correlation have been treated by the generalized gradient approximation (GGA) within the scheme due to Perdew-Burke-Ernzerhof (PBE). The calculated results show that the energy centroid of 5d orbital in nanocrystal has increasing trend compared with that in the bulk material. The bond length and bond covalency are calculated by chemical bond theory. The bond lengths of Y2O3:Eu3+ nanocrystal are shorter than those of the bulk counterpart and the bond covalency of Y2O3:Eu3+ nanocrystal also has an increasing trend. By combining centroid shift and crystal-field splitting, the blue-shift of the CT band is interpreted.

Synthesis and fluorescence of europium-doped barium fluoride cubic nanocolumns

Europium-doped barium fluoride cubic nanocolumns were synthesized from the quaternary water in oil reverse microemulsions In this process, the aqueous cores of water/cetyl trimethyl ammonium bromide (CTAB)/n-butanol/n-octane reverse microemulsions were used as microreactors for the precipitation of europium doped barium fluoride. XRD analysis shows that under the dopant concentration of 0.06% (molar fraction), the products are single phase. The result products are cubic column-like with about 30 similar to 50 nm edge length of cross section, and about 200 nm of length obtained from the transmission electron microscopy (TEM), and atomic force microscopy (AFM). Under the 0.06 % (molar fraction) of dopant concentration I the fluorescence of Eu2+ and Eu3+ under the 589 of excitation wavelength is observed.

Rapid synthesis of cubic Pt nanoparticies and their use for the preparation of Pt nanoagglomerates

We report the synthesis of hexadecyltrimethylammonium bromide (CTAB)-stabilized cubic Pt nanoparticles by NaBH4 reduction of H2PtCl6 in aqueous CTAB solution. These Pt nanoparticles (average size of 7 nm) were well dispersed in aqueous solution and stable at least for 2 months. Addition of a trace amount of AgNO3 can alter the morphology of these Pt nanoparticles. More interestingly, the as-prepared uniform Pt nanoparticles were further developed into bigger Pt nanoagglomerates (similar to 20 to 47 nm) by a seed-mediate growth process. Dentritic and spherical Pt nanoagglomerates can be synthesized by altering the incubation time and their size can be tuned by controlling the amount of the seeds added.

Preparation and characterization of luminescent cubic MCM-48 impregnated with an Eu3+ beta-diketonate complex

We report on the preparation of luminescent silica mesoporous molecular sieves (MCM-48) activated by the europium complex Eu(DBM)(3) . 2H(2)O (where DBM = dibenzoylmethane), using a simple wet impregnation method. Different concentrations of Eu(DBM)(3) . 2H(2)O were introduced into the MCM-48 cubic structure, and the resulting samples were washed with ethanol for different times. UV-Vis absorption measurements and thermogravimetric analysis were used to estimate the amount of Eu complex that has been incorporated within the pores of the MCM-48 host. The various samples were characterized by X-ray powder diffraction (XRD), infrared spectroscopy, diffuse reflectance (DR) and fluorescence measurements. The results reveal that Eu complexes have been successfully introduced into the pores of MCM-48 without disrupting the structure. All the impregnated MCM-48 materials show the typical red luminescence of Eu3+ when excited with a UV lamp. Shifts of the absorption maxima were observed in the DR and fluorescence excitation spectra and will be discussed in relation with guest-host interactions between the organic complex and the silica matrix. The decay profiles of the europium luminescence in the different samples were also measured and discussed.

ELECTRODEPOSITION OF POLYCRYSTALLINE CD-RICH HG1-XCDXTE AND PHOTOELECTRO-CHEMICAL BEHAVIOR OF HG0.09CD0.91TE THIN-FILM

Electrodeposition process of polycrystalline Cd-rich Hg_(1-z)Cd_xTe (x>0.5) in acidic bath of CdSO_4+HTeO_2~+HgCl_2 was investigated. The simultaneous electrodeposition technique of three kinds of ions at the same potential has been achieved. The XRD, SEM and EDAX analysis of the thin film electrodeposited on titanium substrate showed a typical cubic zinc blende polycrystalline structure and homogeneous dispersion. The photoelectrochemical behavior of (1-x)=0.09 polycrystalline thin film in a polysulfide re...

Seismic profiles across the middle Tan-Lu fault zone in Laizhou Bay, Bohai Sea, eastern China

The stratigraphic architecture, structure and Cenozoic tectonic evolution of the Tan-Lu fault zone in Laizhou Bay, eastern China, are analyzed based on interpretations of 31 new 2D seismic lines across Laizhou Bay. Cenozoic strata in the study area are divided into two layers separated by a prominent and widespread unconformity. The upper sedimentary layer is made up of Neogene and Quaternary fluvial and marine sediments, while the lower layer consists of Paleogene lacustrine and fluvial facies. In terms of tectonics, the sediments beneath the unconformity can be divided into four main structural units: the west depression, central uplift, east depression and Ludong uplift. The two branches of the middle Tan-Lu fault zone differ in their geometry and offset: the east branch fault is a steeply dipping S-shaped strike-slip fault that cuts acoustic basement at depths greater than 8 km, whereas the west branch fault is a relatively shallow normal fault. The Tan-Lu fault zone is the key fault in the study area, having controlled its Cenozoic evolution. Based on balanced cross-sections constructed along transverse seismic line 99.8 and longitudinal seismic line 699.0, the Cenozoic evolution of the middle Tan-Lu fault zone is divided into three stages: Paleocene-Eocene transtension, Oligocene-Early Miocene transpression and Middle Miocene to present-day stable subsidence. The reasons for the contrasting tectonic features of the two branch faults and the timing of the change from transtension to transpression are discussed. Crown Copyright (C) 2008 Published by Elsevier Ltd. All rights reserved.