Bending of jets in the QSO NRAO 530

We present radio images of NRAO 530 on scales ranging from pc to kpc. The observations include the EVN at 5 GHz, the VLBA at 1.6, 8.6 and 15 GHz, the MERLIN at 1.6 and 5 GHz, and the VLA at 5, 8.4, 15, 22, and 43 GHz. The VLBI images show a core-jet structure with an oscillating trajectory on a scale of about 30 mas north of the strongest compact component (core). Superluminal motions are detected in five of the jet components with apparent velocities in the range of 13.6 to 25.2c. A new component is detected at 15 GHz with the VLBA observations, which appears to be associated with the outburst in 2002. Significant polarized emission is detected around the core with the VLBA observations at 15 GHz. Rapid variations of the polarization intensity and angle are found between the epochs in 2002 and 2004. On the kpc-scale, a distant component (labelled as WL) located 11 aresec west (PA=-86 degrees) of the core is detected beyond the core-jet structure which extended to several hundreds of mas in the north-west direction (-50 degrees). A significant emission between the core-jet structure and the WL is revealed. A clump of diffuse emission (labelled EL, 12 arcsec long) at PA 70 degrees to the core, is also detected in the VLA observations, suggesting the presence of double lobes in the source. The core component shows a flat spectrum, while the distant components WL and EL have steep spectra. The steep spectra of the distant components and the detection of the arched emission suggest that the distant components are lobes or hot-spots powered by the core of NRAO 530. The morphologies from pc- to kpc-scales and the bending of jets are investigated. The observed radio morphology from pc to kcp appears to favor the model in which precession or wobbling of the nuclear disk drives the helical motion of the radio plasma and produces the S-shaped structure on kpc scale.

Thermal analysis and test for single concentrator solar cells

A thermal model for concentrator solar cells based on energy conservation principles was designed. Under 400X concentration with no cooling aid, the cell temperature would get up to about 1200℃.Metal plates were used as heat sinks for cooling the system, which remarkably reduce the cell temperature. For a fixed concentration ratio, the cell temperature reduced as the heat sink area increased. In order to keep the cell at a constant temperature, the heat sink area needs to increase linearly as a function of the concentration ratio. GaInP/GaAs/Ge triple-junction solar cells were fabricated to verify the model. A cell temperature of 37℃ was measured when using a heat sink at 400X concentratration.

A Radial Stub Test Circuit for Microwave Power Devices

With the principles of microwave circuits and semiconductor device physics, two microwave power device test circuits combined with a test fixture are designed and simulated, whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz. The simulation and experimental results verify that the test circuit with a radial stub is better than that without. As an example, a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture. With a 5.4GHz microwave input signal, the maximum gain is 8.75dB, and the maximum output power is 33.2dBm.

Two-port calibration of test fixtures with OSL method.

The open-short-load (OSL) method is very simple and widely used, for one-port test fixture calibration. In this paper, this method. is extended to the two-port calibration of test fixtures for the first time. The problem of phase uncertainty arising in this application has been solved. The comparison between our results and those obtained with the short-open-load-thru (SOLT) method shows that the method established is accurate enough for practical applications.

Frequency limitation in calibrating microwave test fixtures

The problem of frequency limitation arising in calibration of the test fixtures is investigated in this paper. It is found that at some frequencies periodically, the accuracy of the methods becomes very low, and. the denominators of the expressions of the required S-parameters approach zero. This conclusion can be drawn whether-the test fixtures, are symmetric or not. A good agreement between theory and experiment is obtained.

Scan test in 18x8 bits Booth Coding-Wallace Tree multiplier

Scan test can be inserted around hard IP cores that have not been designed with DFT approaches. An 18x18 bits Booth Coding-Wallace Tree multiplier has been designed with full custom approach with 0.61 m CMOS technology. When we reuse the multiplier in another chip, scan chain has been inserted around it to increase the fault coverage. After scan insertion, the multiplier needs 4.7% more areas and 24.4% more delay time, while the fault coverage reaches to 95%.

Extracting nanobelt mechanical properties from nanoindentation

A three-spring-in-series model is proposed for the nanobelt (NB) indentation test. Compared with the previous two-spring-in-series model, which considers the bending stiffness of atomic force microscope cantilever and the indenter/NB contact stiffness, this model adds a third spring of the NB/substrate contact stiffness. NB is highly flexural due to its large aspect ratio of length to thickness. The bending and lift-off of NB form a localized contact with substrate, which makes the Oliver-Pharr method [W. C. Oliver and G. M. Pharr, J. Mater. Res. 7, 1564 (1992)] and Sneddon method [I. N. Sneddon, Int. J. Eng. Sci. 3, 47 (1965)] inappropriate for NB indentation test. Because the NB/substrate deformation may have significant impact on the force-indentation depth data obtained in experiment, the two-spring-in-series model can lead to erroneous predictions on the NB mechanical properties. NB in indentation test can be susceptible to the adhesion influence because of its large surface area to volume ratio. NB/substrate contact and adhesion can have direct and significant impact on the interpretation of experimental data. Through the three-spring-in-series model, the influence of NB/substrate contact and adhesion is analyzed and methods of reducing such influence are also suggested. (C) 2010 American Institute of Physics. [doi:10.1063/1.3432748]

LOCAL BENDING OF THIN FILM ON VISCOUS LAYER

Effects of deposition layer position and number/density on local bending of a thin film are systematically investigated. Because the deposition layer interacts with the thin film at the interface and there is an offset between the thin film neutral surface and the interface, the deposition layer generates not only axial stress but also bending moment. The bending moment induces an instant out-of-plane deflection of the thin film, which may or may not cause the so-called local bending. The deposition layer is modeled as a local stressor, whose location and density are demonstrated to be vital to the occurrence of local bending. The thin film rests on a viscous layer, which is governed by the Navier-Stokes equation and behaves like an elastic foundation to exert transverse forces on the thin film. The unknown feature of the axial constraint force makes the governing equation highly nonlinear even for the small deflection case. The constraint force and film transverse deflection are solved iteratively through the governing equation and the displacement constraint equation of immovable edges. This research shows that in some special cases, the deposition density increase does not necessarily reduce the local bending. By comparing the thin film deflections of different deposition numbers and positions, we also present the guideline of strengthening or suppressing the local bending.