A large-area photolithography technique based on surface plasmons leakage modes

An atomic force microscope (AFM) assisted surface plasmons leakage radiation photolithography technique has been numerically demonstrated by using two-dimensional finite-difference time-domain (2D-FDTD) method. With the aid of a metallic AFM tip, particular characteristic of the Kretstchmann configuration to excite surface plasmons (SPs) is utilized to achieve large-area patterns with high spatial resolution and contrast, the photoresist could be exposed with low power laser due to the remarkable local field enhancement at the metal/dielectric interface and the resonant localized SPs modes near the tip. Good tolerance on the film thickness and incident angle has been obtained, which provides a good practicability for experiments. This photolithography technique proposed here can realize large-area, high-resolution, high-contrast, nondestructive, arbitrary-structure fabrication of nanoscale devices. (c) 2007 Elsevier B.V. All rights reserved.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

Study on readout durability of super-RENS disk

Characteristics essential for the readout durability of a superresolution near-field structure (super-RENS) disk are studied experimentally by using a home-built optical measuring setup and atomic force microscope, based on a simplified PtOx super-RENS disk. The experimental results show that for a super-RENS disk with constant structure and materials, readout signals including transmittance and reflectance vary with changes in bubble shape and size, indicating that the readout durability of the disk has a strong dependence on bubble stability, which is closely related to the thickness of the cover layer, the recording power and readout power, and the mechanical properties of the dielectric layer. Based on our experimental results, the main direction for improving readout durability is also proposed. (c) 2008 Optical Society of America.

Preparation and characterization of hybrid ZnO/ormosils films

Hybrid ZnO/ormosils Elms are prepared by the sol-gel method. A FT-IR spectrometer, 900 UV/VIS/NIR spectrophotometer, atomic force microscope, and ellipsometer are employed to investigate microstructure and optical properties of the films fired at different temperatures. The results show that the films with high transmittance and low surface roughness could be obtained at the heat-treatment temperature of 150 degrees C, the refractive index and thickness of the film are 1.413, 2.11 mu m, respectively. Higher temperatures (350 degrees C, 550 degrees C) change the Elm microstructure severely, and then decrease the transmittance of the films.

Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy

Homoepitaxial ZnO films have been grown via liquid-phase epitaxy (LPE) on (000 1) oriented ZnO substrates. X-ray rocking curve revealed the high quality of the ZnO films with a FWHM of 40 arc sec. Films of thickness about 20 gm were gown in the temperature range 700-720 degrees C. The growth rate of ZnO films was estimated to be 0.3 mu m h(-1). Atomic force microscope analysis showed that the surface roughness of ZnO films was very low, which further confirmed the high crystallinity of ZnO films. (c) 2006 Elsevier B.V. All rights reserved.

高质量LiGaO2晶体的提拉法生长及表征

采用提拉法成功地生长了高质量的LiGaO2单晶体,生长过程中没有观察到挥发现象。通过四晶X射线衍射、化学腐蚀、光学显微、透过光谱以及原子力显微镜对晶体的质量进行了表征。结果表明：晶体中无包裹物及气泡,具有很高的质量,（001）面晶片的摇摆曲线半高宽仅为16.2arcsec,正交的（001）、（100）及（010）三个晶面具有不同的腐蚀形貌,其位错密度均低于10^4/cm^2;LiGaO2晶体的吸收边约为220nm;化学机械抛光后的晶片表面非常光滑,其均方根粗糙度仅为0.1nm（5×5μm^2）。

不同膜层数的Mo/Si多层膜的表界面粗糙度和软X射线反射率

用磁控溅射法制备了顶层分别是Mo膜层和Si膜层的两个系列的Mo/Si多层膜，它们的周期厚度相同但是膜层数各不相同。Mo/Si多层膜的周期厚度和界面粗糙度由小角X射线衍射（SAXRD）曲线拟和得到。用原子力显微镜测量了Mo/Si多层膜的表面粗糙度。在国家同步辐射实验室测量了Mo/Si多层膜的软X射线反射率。通过理论和试验研究，发现Mo/Si多层膜的软X射线反射率主要由周期数和界面粗糙度决定，表面粗糙度对Mo/Si多层膜的软X射线反射率影响较小。

Mo／Si软X射线多层膜的界面粗糙度研究

用磁控溅射法分别制备了以Mo膜层和Si膜层为顶层的Mo／Si多层膜系列，利用小角X射线衍射确定了各多层膜的周期厚度。以不同周期数的Mo／Si多层膜的新鲜表面近似等同于同一多层膜的内界面，通过原子力显微镜研究了多层膜界面粗糙度随膜层数的变化规律。并在国家同步辐射实验室测量了各多层膜的软X射线反射率。研究表明：随着膜层数的增加，Mo膜层和Si膜层的界面粗糙度先减小后增加然后再减小，多层膜的峰值反射率先增加后减小。

松杉类植物花粉发育和传粉生物学的研究

本文用光学显微镜结合荧光技术对青扦花粉的发育过程进行了观察;用共聚焦显微镜观察了白扦生长花粉管细胞内的游离Ca2+分布;利用原子力显微镜对雪松和水杉花粉外壁的亚结构进行了研究：用透射电镜、扫描电镜及解剖镜等技术研究了侧柏、北美香柏、红豆杉、粗榧和白皮松的传粉机制，结果如下。 青扦花粉的发育过程与松科其它一些植物花粉的发育模式相似。从小孢子母细胞到成熟花粉约二十天左右。小孢子母细胞进入减数分裂前彼此分开，但在某些部位仍有连接。细胞质内有大量淀粉粒，在减数分裂过程中减少或消失，没有观察到明显的淀粉粒带。减数分裂中的胞质分裂为同时型，四分体为四面体型。小孢子刚从四分体释放出来时，气囊已开始形成，细胞中含大量淀粉粒。随着小孢子的发育，其体积增大，并出现液泡，细胞核移向一侧。小孢子第一次不对称分裂产生一个大的中央细胞和一个小的原叶细胞。中央细胞不久就进行第二次分裂产生精子器原始细胞和第二原叶细胞。原叶细胞形成后，其与中央细胞或精子器原始细胞之间的壁逐渐沉积胼胝质，以后随着原叶细胞的退化，胼胝质壁消失。精子器原始细胞分裂形成管细胞和生殖细胞，生殖细胞在散粉前分裂形成体细胞（精原细胞）和柄细胞（不育细胞）。成熟花粉为5细胞，但两个原叶细胞已退化消失。 白扦花粉在10%蔗糖+0.01%硼酸的液体培养基内培养12小时后开始萌发。在正常生长的花粉管中，其顶端有一个透明区，而透明区后则含有大量的贮藏物质颗粒。在停止生长的花粉管中透明区消失，而整个花粉管顶端也被储藏物质颗粒充满。正常生长的花粉管顶端有一个较高的Ca2+浓度。在停止生长的花粉管内不具有这样一个Ca2+梯度。 雪松和水杉二种花粉外壁中由孢粉素构成的亚结构单位形态相似，均呈颗粒状，但大小略有不同。雪松的长56-99 nm，宽42-74;水杉的长81-118 nm，宽43-98 nm。在雪松中这些亚单位紧密排列组成短棒状或球状的花粉外壁结构单位，再由几个到十几个这样的结构单位组成较大的岛屿状结构。在这些岛屿状结构之间有大小不一的空隙存在，整个花粉外壁由这样一些岛屿状结构交互连接形成。水杉花粉外壁的亚单位排列也较紧密，且有3-10个成群分布的趋势，但各群之间界限不明显。此外，雪松和水杉的花粉外壁亚单位均无螺旋状排列趋势，这一结果倾向于支持Southworth关于花粉外壁亚单位颗粒状并呈网状排列的观点。 白皮松胚珠倒生，其发育过程与松属的其它种相似，成熟胚珠珠孔端具两手臂状结构，有利于接收花粉。花粉具气囊。传粉期间，没有观察到传粉滴产生，但珠心顶端细胞解体形成花粉室。花粉室内可接受一至几个花粉，花粉在花粉室内的位置无明方向性。传粉时，胚珠处于大孢子线细胞时期。花粉在花粉室内萌发形成花粉管进入珠心组织，花粉管在珠心内生长一段时间后停止生长，并于次年春天重新启动生长。离体生长的花粉管顶端常有胼胝质产生，但顶端区域后的花粉管壁上却无胼胝质沉积。 侧柏、北美香柏、红豆杉和粗榧均为直生胚珠。传粉时胚珠产生传粉滴。在红豆杉胚珠发育早期，珠心表面细胞轮廓清晰;而在后期，其珠心表面则形成了一层膜状结构。这层膜状结构在传粉前随珠心细胞的解体而破裂，珠心细胞的降解产物参与了传粉滴形成。在传粉前和传粉期，珠心细胞内含大量的线粒体、内质网、高尔基体和小泡。传粉滴主要由珠心细胞分泌形成。这四种植物的花粉均无气囊，属可湿性花粉。红豆杉和粗榧的花粉水合时，内壁膨胀，外壁开裂。通常情况下，红豆杉花粉的外壁保留在传粉滴的表面，而花粉的其它部分沉入传粉滴内。侧柏和北美香柏的传粉滴授粉后，花粉进入传粉滴导致传粉滴的明显收缩。在侧柏中传粉滴授粉后100分钟内就完全收缩进入珠孔。传粉滴收缩的速率与所授花粉数量和花粉的种类有关。与侧柏亲缘关系较近植物花粉引起传粉滴的收缩速率和侧柏自身花粉引起的传粉滴收缩速率相似;反之，收缩速率变慢。侧柏传粉滴的收缩可能主要是由于花粉减弱胚珠分泌的结果。但授粉不引起红豆杉和粗榧传粉滴的明显收缩。在红豆杉和粗榧中，从授粉到传粉完全收缩需要20-24小时。这两种植物传粉滴的收缩可能主要是蒸发引起的非代谢性过程，与侧柏和美香柏属于不同的传粉滴收缩机制。

Electroless-plated gold films for sensitive surface plasmon resonance detection of white spot syndrome virus

The paper describes the rapid and label-free detection of the white spot syndrome virus (WSSV) using a surface plasmon resonance (SPR) device based on gold films prepared by electroless plating. The plating condition for obtaining films suitable for SPR measurements was optimized. Gold nanoparticles adsorbed on glass slides were characterized by transmission electron microscopy (TEM). Detection of the WSSV was performed through the binding between WSSV in solution and the anti-WSSV single chain variable fragment (scFv antibody) preimmobilized onto the sensor surface. Morphologies of the as-prepared gold films, gold films modified with self-assembled alkanethiol monolayers, and films covered with antibody were examined using an atomic force microscope (AFM). To demonstrate the viability of the method for real sample analysis, WSSV of different concentrations present in a shrimp hemolymph matrix was determined upon optimizing the surface density of the antibody molecules. The SPR device based on the electroless-plated gold films is capable of detecting concentration of WSSV as low as 2.5 ng/mL in 2% shrimp hemolymph, which is one to two orders of magnitude lower than the level measurable by enzyme-linked immunosorbant assays. (c) 2007 Elsevier B.V. All rights reserved.

High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth

We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density (similar to 5.9x 10(10) CM-2) good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7 meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.

Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling

Self-assembled InAs quantum dots were prepared on GaAS(100)) substrate in a solid source molecular beam epitaxy system The distribution and topographic images of uncapped dots were studied by atomic force microscope. The statistical result shows that the quantum dots are bimodal distribution. The photoluminescence spectrum results shows that the intensity of small size quantum dots dominated, which may be due to: (1) the state density of large quantum dots lower than that of small quantum dots; (2) the carriers capture rate of large size quantum dots is small relative to that of small ones; (3) there is a large strain barrier between large quantum dots and capping layer, and the large strain is likely to produce the defect and dislocation, resulting in a probability carriers transferring from large quantum dots to small dots that is very small with temperature increasing.

Formation of ferromagnetic clusters in GaAs matrix and GaAs/AlGaAs superlattice through Mn ion implantation at two different temperatures

Different submicron ferromagnets are fabricated into GaAs and GaAs/AlGaAs superlattice through ion implantation at two different temperatures followed by thermal annealing. The structural and magnetic properties of the granular film are studied by an atomic force microscope, X-ray diffraction and alternating gradient magnetometer. By analyzing the saturation magnetization M-s, remanence M-r, coercivity H-c and remanence ratio S-q, it is confirmed that both MnGa and MnAs clusters are formed in the 350degreesC-implanted samples whereas only MnAs clusters are formed in the room-temperature implanted samples. (C) 2004 Elsevier B.V. All rights reserved.

Low-temperature growth of InN by MOCVD and its characterization

Metalorganic chemical vapor deposition growth of InN on sapphire substrate has been investigated between 400 degrees C and 500 degrees C to seek the growth condition of InN buffer layer, i.e. the first step of realization of the two-step growth method. Ex situ characterization of the epilayers by means of atomic force microscope, scanning electron microscope and X-ray diffraction, coupled with in situ reflectance curves, has revealed different growth circumstances at these temperatures, and conclusion has been reached that the most suitable temperature for buffer growth is around 450 degrees C. In addition, the growth rate of InN at the optimized temperature with regard to different precursor flow rates is studied at length. (c) 2004 Elsevier B.V. All rights reserved.

Improved field emission properties from metal-coated diamond films

Diamond films were prepared by microwave plasma chemical vapor deposition (MWPCVD). In order to obtain better field emission properties, the samples coated with different metals were prepared. The results showed that the field emission properties of diamond coated with metals could be greatly improved in comparison to pure diamond film and the different kinds of coated metals have different influences on the field emission properties. The possible reasons of effects on the field emission properties are discussed, which were probably due to the reduced effective surface work function by metal coatings; but the detail of the mechanism should be studied further. The surface morphology and microstructure of the sample were characterized by Atomic Force Microscope (AFM), X-ray photoelectron spectroscopy (XPS), X-ray Diffraction (XRD) and Raman spectrum tests. (c) 2006 Elsevier B.V. All rights reserved.