用光化学方法氧化Tb~(3+)、Pr~(3+)、Ce~(3+)离子

本文内容包括Tb~(3+)、Pr~(3+)、Ce~(3+)的光氧化。研究了各种因素对氧化率或四价离子生成量的影响。在Tb~(3+)光氧化的基础上，建立了混合钇族稀土中Tb的光化学分析法及混合稀土中Tb的化学氧化分析方法。Tb~(3+)、Pr~(3+)的光氧化是开创性的工作，Tb的分析方法具有一定的应用价值。1 Ce~(3+)d HZO_3－HClO_4体系中的光氧化 用低压汞灯（254nm)、高压汞灯(366nm)和氩离子激光器(351/364nm, 458 nm, 477nm, 502 nm, 514, nm)光辐照Ce~(3+)-HZO_3-HClO_4溶液，Ce~(3+)发生光氧化反应，生成Ce(ZO_3)_4沉淀 。在低压汞灯254 nm波段可获得较高的氧化率，具它波段下的氧化率低，以低压汞灯为光源辐照。研究了温度、光强、酸度、Ce~(3+)初始浓度及辐照时间对氧化率的影响。降低酸度，选择较高的温度和较大的光强，有利于Ce~(3+)的光氧化。2 Tb~(3+)在KIO_4-KOH体系中的光氧化 用高压汞灯（366nm)光辐照Tb~(3+)-KIO_4-KOH溶液，首次实现了Tb~(3+)的光氧化。研究了碱度、络合剂浓度，Tb~(3+)初始浓度、辐照面积，光强和辐照时间等因素对Tb~(4+)生成的影响。测定了Tb(IV)/Rb(III)的氧化还原电势。适宜的KOH浓度应大于0.3M，KIO_4的浓度要比Tb~(3+)初始浓度大几个数量级。当KOH=0.6M, KIO_4=0.22M, 温度为13 ℃时。E_(Tb(IV)/Tb(III))=0.68优，生成的Tb~(4+)可溶性络离子为红棕色，最大吸收峰在420nm附近，比较稳定。3 用光氧化法分析钇族混合稀土中的Tb 根据Tb~(3+)在KIO_4-KOH体系中的光氧化反应，建立了钇族混合稀土中Tb的分光光度分析方法。在高压汞灯366nm的光辐照不无色的Tb~(3+)转变为红棕色的Tb~(4+)，其谱带的吸收峰值在420nm，其它三价钇族稀土无此反应，故无千扰，在Tb的分析浓度范围为1*10~(-5)M - 1*10~(-3)M时，符合Beer定律，Tb在钇族混合稀土中含量的分析最低限为0.2%。此方法可用于萃取钇族稀土过程中Tb的分析，方法简便快速。4 用化学氧化法分析混合稀土中的Tb 根据Tb~(3+)在KIO_4-KOH-K_2S_2O_8体系中的氧化反应，建立了混和稀土中Tb的分光光度分析方法。Tb~(3+)-KzO_4-KOH-K_2S_2O_8溶液加热，Tb~(3+)被氧化的Tb~(4+)，其颜色由无色转变为红棕色，最大吸收峰在420nm。Ce~(3+)加入KIO＿4－KOH溶液后，立即被完全氧化为Ce~(4+), Ce~(4+)在420nm也有吸收，其干扰可以在本底中排除，其它三价稀土离子在此体系中不能发生氧化反应，故无干扰。在Tb的分析浓度范围为5*10~(-5)-5*10~(-4)M时，符合Beer定律，Tb在混合稀土中含量分析的最低限为1％。此方法可用于萃取稀土过程中Tb的分析和监控，方法简便快速。5 Pr~(3+)在KZO_4－KOH体系中的光氧化用高压汞灯光辐照Pr~(3+)-KZO_4-KOH溶液，首次实现了Pr~(3+)的光氧化。生成的Pr~(4+)为棕褐色，最大吸收峰在400nm附近，稳定性较差，在水溶液中发生自还原反应。按Pr~(4+)在400nm的吸收峰值，研究了辐照时间，Pr~(3+)初始浓度，KOH浓度、KZO＿4浓度及Ce~(4+)共存时对Pr~9(4+)生成的影响。相应增加KOH及KZO＿4用量，有利于Pr~(4+)的生成，Ce~(4+)对Pr~(3+)的光氧化无所谓的“带同氧化作用”。

再论广州七星岗海蚀地形发现的意义

自从笔者发现刊于中山大学日报1937—05—20的《十公尺海蚀台地之发现》一文后，吴尚时已被公认是广州七

Phase diagrams for the MOVPE growth of ZnTe and ZnSeTe

The phase diagrams for the MOVPE growth of ZnTe and ZnSeTe have been proposed for the first time, based on the thermodynamic equilibrium established at the solid-vapor interface, The regions for the single condensed phase of ZnTe(s) and of ZnSeTe(s) have been investigated, respectively, Additionally, the growth conditions of appearance for the double condensed phase of ZnTe(s) + Zn(s or l) and ZnTe(s)+ Te(s or l) for the ZnTe system, of ZnSeTe(s) + Zn(s or l) and ZnSeTe(s)+ Te(s or l) for the ZnSeTe system are discussed.

Aggregation and precipitation in high dose as ion implanted Ge0.5Si0.5 alloy

Thermally stimulated redistribution and precipitation of excess arsenic in Ge0.5Si0.5 alloy has been studied by X-ray photoelectron spectroscopy (XPS), cross sectional transmission electron microscopy (XTEM) and X-ray energy disperse spectrometry (EDS). Samples were prepared by the implantation of 6 X 10(6) As+ cm(-2) and 100 keV with subsequent thermal processing at 800 degrees C and 1000 degrees C for 1 h. The XPS depth profiles from the implanted samples before and after the thermal annealing indicate that there is marked redistribution of the elements in heavily arsenic-implanted Ge0.5Si0.5 alloys during the annealing, including: (1) diffusion of As from the implanted region to the surface; (2) aggregation of Ge in the vicinity of the surface. A high density of precipitates was observed near the surface which were by XTEM and EDS identified as an arsenide. It is suggested that most of the implanted As in Ge0.5Si0.5 alloy exists in the form of GeAs.

AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band

A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10×120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at V_(DS) =40V, I(DS)= 0. 9A, a maximum CW output power of 41. 4dBm with a maximum power added efficiency (PAE) of 32. 54% and a power combine efficiency of 69% was achieved at 5. 4GHz.

可调谐半导体激光器研究及进展

可调谐半导体激光器是新一代密集波分复用系统以及全光网络中光子交换的关键光电子器件,它的运用使得光纤传输系统容量大大增加,灵活性和可扩展性大大增强,目前已经实现了宽波长范围的连续或准连续调谐,并有相应的产品投放市场.文章介绍了各种基于不同谐振腔结构的可调谐激光器以及各自的调谐机理,对不同类型器件在制作以及实际应用中的优缺点进行了比较.同时总结了国外可调谐半导体激光器的最新进展,并对我国可调谐半导体激光器的研制提出了相应的要求.

掺铒nc-Si/SiO_2薄膜中nc-Si和Er~(3+)与非辐射复合缺陷间相互作用对薄膜发光特性的影响

对nc-Si/SiO_2薄膜中纳米硅(nc-Si)、Er~(3+)和非辐射复合缺陷三者间的关系作了研究.在514.5 nm光激发下,nc-Si/SiO_2薄膜在750nm和1.54μm处存在较强的发光,前者与薄膜中的nc-Si有关,后者对应于Er~(3+)从第一激发态4I13/2到基态4I15/2的辐射跃迁.随薄膜中Er3+含量的提高,1.54μm处的发光强度明显增强,750 nm处的发光强度却降低.H处理可以明显增强薄膜的发光强度,但是对不同退火温度样品,处理效果却有所不同.根据以上实验结果,可得如下结论:在nc-Si颗粒附近的Er~(3+)和其他的缺陷组成了nc-Si颗粒内产生的束缚激子的非辐射复合中心,束缚激子通过Er~(3+)的非辐射复合,激发Er~(3+)产生1.54μm处的发光,同时降低了750nm处的发光强度.nc-Si颗粒附近其他非辐射复合中心的存在会降低Er~(3+)被激发的概率,引起1.54μm处的发光强度降低.

RADIATION OF DRESSED EXCITONS IN THE SEMICONDUCTOR MICROCAVITY

于2010-11-23批量导入

The influence of oxygen content on photoluminescence from Er-doped SiOx

SiOx films with oxygen concentrations ranging 13-46 at.% were deposited by plasma enhanced chemical vapor deposition (PECVD) technique using: pure SiH4 and N2O mixture. Erbium was then implanted at an energy of 500 KeV with dose of 2x10(15) ions/cm(2). The samples were subsequently annealed in N-2 for 20 sec at temperatures of (300-950 degrees C). Room temperature (RT) photo-luminescence (PL) data were collected by Fourier Transform Infrared Spectroscopy (FTIS) with an argon laser at a wavelength of 514.5 nm and an output power from 5 to 2500 mw. The intense room-temperature luminescence was observed around 1.54 mu m. The luminescence intensity increases by 2 orders of magnitude as compared with that of Er-doped Czochralski (CZ) Si. We found that the Er3+ luminescence depends strongly on the SiOx microstructure. Our experiment also showed that the silicon grain radius decreased with increasing oxygen content and finally formed micro-crystalline silicon or nano-crystalline silicon. As a result, these silicon small particles could facilitate the energy transfer to Er3+ and thus enhanced the photoluminescence intensity.